P1665ZTFS

P1665ZTF / P1665ZTFS N-Channel High Voltage Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 650V 225mΩ @VGS = 10V ID 16A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM IAS EAS 16 10 48 4 320 Power Dissipation TC = 25 °C TC = 100 °C PD 48 19 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Ensure that the channel temperature does not exceed 150°C. 3VDD = 50V, L = 40mH, starting TJ = 25°C SYMBOL RqJC RqJA TYPICAL MAXIMUM 2.6 62.5 UNITS °C / W REV 1.0 1 2017/2/13 P1665ZTF / P1665ZTFS N-Channel High Voltage Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±30V 650 2 3.2 4 V ±100 nA Gate Voltage Drain Current Drain-Source On-State Resistance1 IDSS RDS(ON) VDS = 650V, VGS = 0V, TC = 25 °C VDS = 520V, VGS = 0V , TC = 100 °C VGS = 10V, ID = 8A 1 mA 100 175 225 mΩ Forward Transconducta...