N-Channel MOSFET. P1665ZTFS Datasheet

P1665ZTFS MOSFET. Datasheet pdf. Equivalent

P1665ZTFS Datasheet
Recommendation P1665ZTFS Datasheet
Part P1665ZTFS
Description N-Channel MOSFET
Feature P1665ZTFS; P1665ZTF / P1665ZTFS N-Channel High Voltage Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 650V 2.
Manufacture UNIKC
Datasheet
Download P1665ZTFS Datasheet





UNIKC P1665ZTFS
P1665ZTF / P1665ZTFS
N-Channel High Voltage Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
650V
225mΩ @VGS = 10V
ID
16A
TO-220F
TO-220FS
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 650
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
ID
IDM
IAS
EAS
16
10
48
4
320
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
48
19
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Ensure that the channel temperature does not exceed 150°C.
3VDD = 50V, L = 40mH, starting TJ = 25°C
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.6
62.5
UNITS
°C / W
REV 1.0
1 2017/2/13



UNIKC P1665ZTFS
P1665ZTF / P1665ZTFS
N-Channel High Voltage Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
650
2 3.2
4
V
±100 nA
Gate Voltage Drain Current
Drain-Source On-State
Resistance1
IDSS
RDS(ON)
VDS = 650V, VGS = 0V, TC = 25 °C
VDS = 520V, VGS = 0V , TC = 100 °C
VGS = 10V, ID = 8A
1
mA
100
175 225
Forward Transconductance1
gfs
VDS = 10V, ID = 8A
13 S
DYNAMIC
Input Capacitance
Ciss
1762
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance4
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Coss
Crss
Co(er)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 0V, VDS = 0 to 520V
VDD = 520V, VGS = 10V, ID = 8A
VDD = 325V, ID = 8A,
RG= 10Ω, VGS = 10V
1386
4
73
61
9.3
30
40
90
110
55
pF
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 8A, VGS = 0V
16 A
1.5 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 8A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 380 msec, Duty Cycle 2.
358 nS
5.4 uC
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
REV 1.0
2 2017/2/13



UNIKC P1665ZTFS
P1665ZTF / P1665ZTFS
N-Channel High Voltage Mode MOSFET
REV 1.0
3 2017/2/13





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