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P0460EDA Dataheets PDF



Part Number P0460EDA
Manufacturers UNIKC
Logo UNIKC
Description N-Channel MOSFET
Datasheet P0460EDA DatasheetP0460EDA Datasheet (PDF)

P0460EDA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 2.5Ω @VGS = 10V ID 4A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Current3 TC = 25 °C TC = 100 °C ID IDM IAS 4 2.5 20 2 Avalanche Energy3 EAS 20 Power Dissipation TC = 25 °C TC = 100 °C PD 46 18 Operating Juncti.

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P0460EDA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 2.5Ω @VGS = 10V ID 4A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Current3 TC = 25 °C TC = 100 °C ID IDM IAS 4 2.5 20 2 Avalanche Energy3 EAS 20 Power Dissipation TC = 25 °C TC = 100 °C PD 46 18 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3VDD = 50V , L = 10mH ,starting TJ = 25°C SYMBOL RqJA RqJC TYPICAL MAXIMUM 62.5 2.8 UNITS °C / W REV 1.0 1 2017/2/8 P0460EDA N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS Gate Voltage Drain Current IDSS Drain-Source On-State Resistance1 Forward Transconductance1 RDS(ON) gfs VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±30V VDS = 600V, VGS = 0V , TC = 25 °C VDS = 480V, VGS = 0V , TC = 100 °C VGS = 10V, ID = 2A VDS = 15V, ID = 2A 600 2 2.8 4 ±100 1 10 2 2.5 5.5 V nA mA Ω S DYNAMIC Input Capacitance Ciss Output Capacitance Coss VGS = 0V, VDS = 25V, f = 1MHz Reverse Transfer Capacitance Crss Total Gate Charge2 Qg Gate-Source Charge2 Qgs VDD = 480V, ID = 4A, VGS = 10V Gate-Drain Charge2 Qgd Turn-On Delay Time2 td(on) Rise Time2 Turn-Off Delay Time2 tr td(off) VGS = 10V,VDD = 300V ID = 4A, RG= 25Ω Fall Time2 tf 565 62 pF 6 14 2.5 nC 5.1 18 48 nS 47 50 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS Forward Voltage1 VSD IF = 4A, VGS = 0V Reverse Recovery Time Reverse Recovery Charge trr Qrr IF = 4A, dlF/dt = 100A / mS 341 2.1 1Pulse test : Pulse Width  300 msec, Duty Cycle  2%. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. 4 1 A V nS uC REV 1.0 2 2017/2/8 P0460EDA N-Channel Enhancement Mode MOSFET REV 1.0 3 2017/2/8 P0460EDA N-Channel Enhancement Mode MOSFET REV 1.0 4 2017/2/8 P0460EDA N-Channel Enhancement Mode MOSFET *,Layout。 REV 1.0 5 2017/2/8 P0460EDA N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:2500pcs/Reel REV 1.0 6 2017/2/8 P0460EDA N-Channel Enhancement Mode MOSFET REV 1.0 7 2017/2/8 P0460EDA N-Channel Enhancement Mode MOSFET D.Label rule (Label content) REV 1.0 8 2017/2/8 .


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