Document
P0460EDA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
2.5Ω @VGS = 10V
ID 4A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1,2 Avalanche Current3
TC = 25 °C TC = 100 °C
ID
IDM IAS
4 2.5 20 2
Avalanche Energy3
EAS 20
Power Dissipation
TC = 25 °C TC = 100 °C
PD
46 18
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3VDD = 50V , L = 10mH ,starting TJ = 25°C
SYMBOL RqJA RqJC
TYPICAL
MAXIMUM 62.5 2.8
UNITS °C / W
REV 1.0 1 2017/2/8
P0460EDA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage
V(BR)DSS VGS(th) IGSS
Gate Voltage Drain Current
IDSS
Drain-Source On-State Resistance1 Forward Transconductance1
RDS(ON) gfs
VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±30V VDS = 600V, VGS = 0V , TC = 25 °C VDS = 480V, VGS = 0V , TC = 100 °C
VGS = 10V, ID = 2A
VDS = 15V, ID = 2A
600 2
2.8 4 ±100 1 10
2 2.5
5.5
V nA mA
Ω S
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge2
Qg
Gate-Source Charge2
Qgs VDD = 480V, ID = 4A, VGS = 10V
Gate-Drain Charge2
Qgd
Turn-On Delay Time2
td(on)
Rise Time2 Turn-Off Delay Time2
tr td(off)
VGS = 10V,VDD = 300V ID = 4A, RG= 25Ω
Fall Time2
tf
565 62 pF 6 14 2.5 nC 5.1 18 48
nS 47 50
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 4A, VGS = 0V
Reverse Recovery Time Reverse Recovery Charge
trr Qrr
IF = 4A, dlF/dt = 100A / mS
341 2.1
1Pulse test : Pulse Width 300 msec, Duty Cycle 2%.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
4 1
A V nS uC
REV 1.0 2 2017/2/8
P0460EDA
N-Channel Enhancement Mode MOSFET
REV 1.0 3 2017/2/8
P0460EDA
N-Channel Enhancement Mode MOSFET
REV 1.0 4 2017/2/8
P0460EDA
N-Channel Enhancement Mode MOSFET
*,Layout。
REV 1.0
5
2017/2/8
P0460EDA
N-Channel Enhancement Mode MOSFET
A. Marking Information
B. Tape&Reel Information:2500pcs/Reel
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P0460EDA
N-Channel Enhancement Mode MOSFET
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P0460EDA
N-Channel Enhancement Mode MOSFET
D.Label rule
(Label content)
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.