N-Channel MOSFET. PD616BA Datasheet

PD616BA MOSFET. Datasheet pdf. Equivalent

PD616BA Datasheet
Recommendation PD616BA Datasheet
Part PD616BA
Description N-Channel MOSFET
Feature PD616BA; NIKO-SEM N-Channel Enhancement Mode PD616BA Field Effect Transistor TO-252 Halogen-Free & Lead-.
Manufacture NIKO-SEM
Datasheet
Download PD616BA Datasheet




NIKO-SEM PD616BA
NIKO-SEM
N-Channel Enhancement Mode
PD616BA
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 7mΩ
ID
55A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 100 °C
L = 0.1mH
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Package limitation current is 30A
TYPICAL
1. GATE
2. DRAIN
3. SOURCE
LIMITS
30
±20
55
35
120
23
27
38
15
-55 to 150
UNITS
V
V
A
mJ
W
°C
MAXIMUM
3.3
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125 °C
VGS = 4.5V, ID = 15A
VGS = 10V , ID = 20A
30
1.35 1.7
7
5.6
V
3
±100 nA
1
A
10
9.5
mΩ
7
REV 1.0
1
E-09-3



NIKO-SEM PD616BA
NIKO-SEM
N-Channel Enhancement Mode
PD616BA
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
Forward Transconductance1
gfs VDS = 5V, ID = 20A
DYNAMIC
50
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
821
159
96
2.2
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 15V , ID = 20A
VDS = 15V
ID 20A, VGS = 10V, RGEN =6Ω
17.2
9.2
1.9
5.2
27
23
51
24
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 20A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 20A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is 30A
8.6
1.7
55
1.2
S
pF
Ω
nC
nS
A
V
nS
nC
REV 1.0
2
E-09-3



NIKO-SEM PD616BA
NIKO-SEM
N-Channel Enhancement Mode
PD616BA
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
Output Characteristics
40
VGS=10V
VGS=9V
VGS=8V
32
VGS=7V
VGS=6V
VGS=4.5V
VGS=3.5V
VGS=3V
24
Transfer Characteristics
30
24
18
16
8
VGS=2.5V
0
0123
VDS, Drain-To-Source Voltage(V)
4
On-Resistance VS Temperature
1.8
1.6
1.4
1.2
1.0
0.8 VGS=10V
ID=20A
0.6
-50
-25 0 25 50 75 100 125
TJ , Junction Temperature(˚C)
150
Gate charge Characteristics
10 Characteristics
VDS=15V
ID=20A
8
6
12
6
0
0
1000
900
800
700
600
500
400
300
200
100
0
0
25
125
-20
123
VGS, Gate-To-Source Voltage(V)
Capacitance Characteristic
4
CISS
COSS
CRSS
5 10 15 20 25 30
VDS, Drain-To-Source Voltage(V)
Source-Drain Diode Forward Voltage
100
150
25
10
4
1
2
0
0 4 8 12 16 20
Qg , Total Gate Charge(nC)
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD, Source-To-Drain Voltage(V)
1.2
REV 1.0
3
E-09-3





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