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N-Channel MOSFET. PM514BA Datasheet

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N-Channel MOSFET. PM514BA Datasheet






PM514BA MOSFET. Datasheet pdf. Equivalent




PM514BA MOSFET. Datasheet pdf. Equivalent





Part

PM514BA

Description

N-Channel MOSFET



Feature


NIKO-SEM N-Channel Enhancement Mode Fie ld Effect Transistor PM514BA SOT-23(S) Halogen-Free & Lead-Free PRODUCT SUM MARY V(BR)DSS RDS(ON) 20V 62mΩ ID 3A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARA METERS/TEST CONDITIONS SYMBOL Gate-So urce Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Power Dissipa.
Manufacture

NIKO-SEM

Datasheet
Download PM514BA Datasheet


NIKO-SEM PM514BA

PM514BA; tion TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VGS ID IDM PD Tj, Tstg 1. GATE 2. DRAI N 3. SOURCE LIMITS ±8 3 2.1 12 0.7 0. 4 -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junct ion-to-Ambient2 RJA 170 °C/W 1Pu lse width limited by maximum junction t emperature. 2The value of.


NIKO-SEM PM514BA

RθJA is measured with the device mount ed on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25 °C. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAME TER SYMBOL TEST CONDITIONS Drain-Sou rce Breakdown Voltage Gate Threshold Vo ltage Gate-Body Leakage Zero Gate Volta ge Drain Current Drain-Source On-State Resistance1 Forward T.


NIKO-SEM PM514BA

ransconductance1 V(BR)DSS VGS(th) IGSS IDSS RDS(ON) gfs STATIC VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±8V VDS = 16V, VGS = 0V VDS = 10V, VGS = 0V, TJ = 55 °C VGS = 1.8V , ID = 2.5A VGS = 2.5V, ID = 2.8A VGS = 4.5V, ID = 3A VDS = 5V, ID = 3A LIMIT S MIN TYP MAX UNIT 20 0.5 0.7 1 V ±100 nA 1 A 10 51 85 41 70 mΩ 3 5 62 16 S REV 0.9 Mar-19-.

Part

PM514BA

Description

N-Channel MOSFET



Feature


NIKO-SEM N-Channel Enhancement Mode Fie ld Effect Transistor PM514BA SOT-23(S) Halogen-Free & Lead-Free PRODUCT SUM MARY V(BR)DSS RDS(ON) 20V 62mΩ ID 3A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARA METERS/TEST CONDITIONS SYMBOL Gate-So urce Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Power Dissipa.
Manufacture

NIKO-SEM

Datasheet
Download PM514BA Datasheet




 PM514BA
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PM514BA
SOT-23(S)
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 62mΩ
ID
3A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
±8
3
2.1
12
0.7
0.4
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Ambient2
RJA
170 °C/W
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
STATIC
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±8V
VDS = 16V, VGS = 0V
VDS = 10V, VGS = 0V, TJ = 55 °C
VGS = 1.8V, ID = 2.5A
VGS = 2.5V, ID = 2.8A
VGS = 4.5V, ID = 3A
VDS = 5V, ID = 3A
LIMITS
MIN TYP MAX
UNIT
20
0.5 0.7
1
V
±100 nA
1
A
10
51 85
41 70 mΩ
35 62
16 S
REV 0.9
Mar-19-2012
1




 PM514BA
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PM514BA
SOT-23(S)
Halogen-Free & Lead-Free
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss VGS = 0V, VDS = 10V, f = 1MHz
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
VDS = 10V , VGS =4.5V,
ID = 3A
VDD = 10V,
ID 3A, VGEN = 4.5V, RG = 6Ω
Fall Time2
tf
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 3A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 3A, dlF/dt = 100A / S
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
398
58 pF
52
7
0.7 nC
2
30
30
nS
90
31
3A
1V
10 nS
2 nC
REV 0.9
Mar-19-2012
2




 PM514BA
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PM514BA
SOT-23(S)
Halogen-Free & Lead-Free
Output Characteristics
18
VGS=6.5V
VGS=5.5V
VGS=4.5V
15 VGS=3.5V
VGS=2.5V
VGS=1.8V
12
Transfer Characteristics
18
15
12
99
VGS=1.5V
66
125
25
-20
33
0
01234
VDS, Drain-To-Source Voltage(V)
On-Resistance VS Temperature
1.8
1.6
1.4
1.2
1.0
0.8
VGS=4.5V
0.6 ID=3A
0.4
-50 -25 0 25 50 75 100 125 150
TJ , Junction Temperature(˚C)
Gate charge Characteristics
10
VDS=10V
8 ID=3A
0
0 0.5 1 1.5 2 2.5 3
VGS, Gate-To-Source Voltage(V)
Capacitance Characteristic
450
CISS
360
270
180
90
0
0
COSS
CRSS
5 10 15 20 25 30
VDS, Drain-To-Source Voltage(V)
Source-Drain Diode Forward Voltage
10
6
1
4
150
25
2
0
0
REV 0.9
246
Qg , Total Gate Charge(nC)
0.1
8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-To-Drain Voltage(V)
Mar-19-2012
3






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