NIKO-SEM
N-Channel Enhancement Mode Field Effect Transistor
PM514BA
SOT-23(S)
Halogen-Free & Lead-Free
PRODUCT SUMMA...
NIKO-SEM
N-Channel Enhancement Mode Field Effect
Transistor
PM514BA
SOT-23(S)
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 62mΩ
ID 3A
D
G S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
Power Dissipation
TA = 25 °C TA = 70 °C
Operating Junction & Storage Temperature Range
VGS ID IDM PD Tj, Tstg
1. GATE 2. DRAIN 3. SOURCE
LIMITS ±8 3 2.1 12 0.7 0.4
-55 to 150
UNITS V
A
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Ambient2
RJA
170 °C/W
1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current
Drain-Source On-State Resistance1 Forward Transconductance1
V(BR)DSS VGS(th) IGSS IDSS
RDS(ON)
gfs
STATIC
VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±8V VDS = 16V, VGS = 0V VDS = 10V, VGS = 0V, TJ = 55 °C VGS = 1.8V, ID = 2.5A VGS = 2.5V, ID = 2.8A
VGS = 4.5V, ID = 3A VDS = 5V, ID = 3A
LIMITS MIN TYP MAX
UNIT
20 0.5 0.7
1
V
±100 nA
1 A
10
51 85 41 70 mΩ
35 62
16 S
REV 0.9
Mar-19-2012 1
NIKO-SEM
N-...