PD6B2BA

NIKO-SEM N-Channel Enhancement Mode PD6B2BA Field Effect Transistor TO-252 (Preliminary) Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 7mΩ ID 60A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 100 °C L = 0.1mH TC = 25 °C TC = 100 °C VDS VGS ID IDM IAS EAS PD TJ, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RJC Junction-to-Ambient RJA 1Pulse width limited by maximum junction temperature. 2Package limitation current is 55A TYPICAL 1. GATE 2. DRAIN 3. SOURCE LIMITS 30 ±20 60 38 120 25 31 48 19 -55 to 150 UNITS V V A mJ W °C MAXIMUM 2.6 62.5 UNITS °C / W ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC LIMITS UNIT MIN TYP MAX Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance1 V(BR)DSS VGS(th) IGSS IDSS RDS(ON) VGS = 0V, ID = 250A VDS = VGS, ID = 250A 30 1.3 1.6 2.3 V VDS = 0V, VGS = ±20V ±100 nA VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C 1 A 10 VGS = 4.5V, ID = 15A VGS = 10V , ID = 20A 5.7 9 mΩ 4.7 7 REV0.8 1 E-12-5 NIKO-SEM N-Channel Enhancement Mode PD6B2BA Field Effect Transisto...