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P2003BDG Dataheets PDF



Part Number P2003BDG
Manufacturers NIKO-SEM
Logo NIKO-SEM
Description N-Channel MOSFET
Datasheet P2003BDG DatasheetP2003BDG Datasheet (PDF)

NIKO-SEM N-Channel Logic Level Enhancement P2003BDG Mode Field Effect Transistor TO-252 (DPAK) Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 20mΩ ID 32A D G S 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH Power Dissipation TC = 2.

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NIKO-SEM N-Channel Logic Level Enhancement P2003BDG Mode Field Effect Transistor TO-252 (DPAK) Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 20mΩ ID 32A D G S 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VDS VGS ID IDM IAS EAS PD Tj, Tstg LIMITS 25 ±20 32 20 110 23 27 35 14 -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RJC Junction-to-Ambient RJA Case-to-Heatsink RCS 1Pulse width limited by maximum junction temperature. 2Duty cycle  1% TYPICAL 0.7 MAXIMUM 3.6 75 UNITS °C / W ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC LIMITS UNIT MIN TYP MAX Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) VGS = 0V, ID = 250A VDS = VGS, ID = 250A 25 1.0 1.8 2.5 V VDS = 0V, VGS = ±20V ±250 nA VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C 25 A 250 VDS = 10V, VGS = 10V 110 A REV 1.0 Sep-09-2009 1 NIKO-SEM N-Channel Logic Level Enhancement P2003BDG Mode Field Effect Transistor TO-252 (DPAK) Halogen-Free & Lead-Free Drain-Source On-State Resistance1 Forward Transconductance1 RDS(ON) gfs VGS = 4.5V, ID = 10A VGS = 10V, ID = 15A VDS = 5V, ID = 15A 29 41 mΩ 14 20 19 S DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Ciss Coss Crss Rg VGS = 0V, VDS = 15V, f = 1MHz VGS = 0V, VDS = 0V, f = 1MHz 492 221 187 1.5 pF Ω Total Gate Charge2 Gate-Source Charge2 Gate-Drain Charge2 Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 Qg (VGS=10V) Qg(VGS=4.5V) Qgs Qgd td(on) tr td(off) tf VDS = 15V, ID = 15A VDD = 15V ID  15A, VGS = 10V, RGS = 6Ω 14.7 7.7 2.3 5.6 10 17 34 27 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current Forward Voltage1 IS VSD IF = 15A, VGS = 0V Reverse Recovery Time Reverse Recovery Charge trr IF = 15A, dlF/dt = 100A / S Qrr 1Pulse test : Pulse Width  300 sec, Duty Cycle  2%. 2Independent of operating temperature. 27 36 25 1.4 nC nS A V nS nC REMARK: THE PRODUCT MARKED WITH “P2003BDG”, DATE CODE or LOT # REV 1.0 Sep-09-2009 2 ID, Drain-To-Source Current(A) RDS(ON),ON-Resistance(OHM) NIKO-SEM N-Channel Logic Level Enhancement P2003BDG Mode Field Effect Transistor TO-252 (DPAK) Halogen-Free & Lead-Free Output Characteristics 100 Transfer Characteristics 100 VGS = 10V 80 VGS = 6V 80 ID, Drain-To-Source Current(A) 60 VGS = 4.5V 40 20 VGS = 3V 0 0 12 3 4 VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature RDS(ON) ╳ 2.0 5 RDS(ON) ╳ 1.8 RDS(ON) ╳ 1.6 RDS(ON) ╳ 1.4 RDS(ON) ╳ 1.2 RDS(ON) ╳ 1.0 RDS(ON) ╳ 0.8 RDS(ON) ╳ RDS(ON) ╳ 10 0.6 VGS=10V ID=15A 0.4 -50 -25 0 25 50 75 100 125 150 TJ , Junction Temperature(˚C) Gate charge Characteristics Characteristics 8 ID=15A V DS=15V 6 4 2 0 0 3 6 9 12 15 Qg , Total Gate Charge IS , Source Current(A) C , Capacitance(pF) 60 40 TJ=125° C TJ=25° C 20 TJ=-20° C 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 VGS, Gate-To-Source Voltage(V) Capacitance Characteristic 8.00E+02 8.0 7.00E+02 6.00E+02 5.00E+02 4.00E+02 Ciss 3.00E+02 2.00E+02 1.00E+02 Coss Crss 0.00E+00 0 5 10 15 20 25 30 VDS, Drain-To-Source Voltage(V) Source-Drain Diode Forward Voltage 1.0E+03 1.0E+02 1.0E+01 TJ =150° C 1.0E+00 1.0E-01 TJ =25°C 1.0E-02 1.0E-03 1.0E-04 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-To-Drain Voltage(V) 1.4 VGS , Gate-To-Source Voltage(V) REV 1.0 Sep-09-2009 3 ID , Drain Current(A) NIKO-SEM N-Channel Logic Level Enhancement P2003BDG Mode Field Effect Transistor TO-252 (DPAK) Halogen-Free & Lead-Free Safe Operating Area 1000 Single Pulse Maximum Power Dissipation 500 Operation in This Area is Lim ite d by RDS(ON) ↓100 400 SINGLE PULSE RθJC = 3.6˚ C/W TC=25˚ C 300 Power(W) 100us 10 NOTE : 1.VGS= 10V 2.TC=25˚ C 3.RθJC = 3.6˚ C/W 4.Single Pulse 1m s 10m s DC 1 1 10 VDS, Drain-To-Source Voltage(V) 200 100 0 100 0.0001 0.001 0.01 0.1 Single Pulse Time(s) 1.00E+01 Transient Thermal Response Curve 1 10 1.00E+00 Duty Cycle=0.5 1.00E-01 0.2 0.1 0.05 0.02 0.01 single Pluse 1.00E-02 1.E-05 1.E-04 1.E-03 1.E-02 T1 , Square Wave Pulse Duration[sec] Note 1.Duty cycle, D= t1 / t2 2.RthJC = 3.6 oC/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC 1.E-01 1.E+00 r(t) , Normalized Effective Transient Thermal Resistance REV 1.0 Sep-09-2009 4 NIKO-SEM N-Channel Logic Level Enhancement P2003BDG Mode Field Effect Transi.


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