Document
NIKO-SEM
N-Channel Logic Level Enhancement
P2003BDG
Mode Field Effect Transistor
TO-252 (DPAK) Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 20mΩ
ID 32A
D
G S
1. GATE 2. DRAIN 3. SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
VDS VGS
ID
IDM IAS EAS
PD
Tj, Tstg
LIMITS 25 ±20 32 20 110 23 27 35 14
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
Case-to-Heatsink
RCS
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
TYPICAL 0.7
MAXIMUM 3.6 75
UNITS °C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current On-State Drain Current1
V(BR)DSS VGS(th) IGSS
IDSS
ID(ON)
VGS = 0V, ID = 250A VDS = VGS, ID = 250A
25 1.0 1.8
2.5
V
VDS = 0V, VGS = ±20V
±250 nA
VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C
25 A
250
VDS = 10V, VGS = 10V
110
A
REV 1.0
Sep-09-2009 1
NIKO-SEM
N-Channel Logic Level Enhancement
P2003BDG
Mode Field Effect Transistor
TO-252 (DPAK) Halogen-Free & Lead-Free
Drain-Source On-State Resistance1 Forward Transconductance1
RDS(ON) gfs
VGS = 4.5V, ID = 10A VGS = 10V, ID = 15A VDS = 5V, ID = 15A
29 41 mΩ
14 20 19 S
DYNAMIC
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
Ciss Coss Crss Rg
VGS = 0V, VDS = 15V, f = 1MHz VGS = 0V, VDS = 0V, f = 1MHz
492 221 187 1.5
pF Ω
Total Gate Charge2
Gate-Source Charge2 Gate-Drain Charge2 Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2
Qg (VGS=10V) Qg(VGS=4.5V)
Qgs Qgd td(on) tr td(off)
tf
VDS = 15V, ID = 15A
VDD = 15V ID 15A, VGS = 10V, RGS = 6Ω
14.7 7.7 2.3 5.6 10 17 34 27
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current Forward Voltage1
IS VSD IF = 15A, VGS = 0V
Reverse Recovery Time Reverse Recovery Charge
trr IF = 15A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2%.
2Independent of operating temperature.
27 36
25 1.4
nC
nS
A V nS nC
REMARK: THE PRODUCT MARKED WITH “P2003BDG”, DATE CODE or LOT #
REV 1.0
Sep-09-2009 2
ID, Drain-To-Source Current(A)
RDS(ON),ON-Resistance(OHM)
NIKO-SEM
N-Channel Logic Level Enhancement
P2003BDG
Mode Field Effect Transistor
TO-252 (DPAK) Halogen-Free & Lead-Free
Output Characteristics
100
Transfer Characteristics
100
VGS = 10V 80
VGS = 6V
80
ID, Drain-To-Source Current(A)
60 VGS = 4.5V
40
20 VGS = 3V
0 0 12 3 4 VDS, Drain-To-Source Voltage(V)
On-Resistance VS Temperature
RDS(ON) ╳ 2.0
5
RDS(ON) ╳ 1.8
RDS(ON) ╳ 1.6
RDS(ON) ╳ 1.4 RDS(ON) ╳ 1.2
RDS(ON) ╳ 1.0
RDS(ON) ╳ 0.8
RDS(ON) ╳ RDS(ON) ╳
10
0.6 VGS=10V ID=15A
0.4 -50 -25 0 25 50 75 100 125 150
TJ , Junction Temperature(˚C)
Gate charge Characteristics
Characteristics
8
ID=15A V DS=15V
6
4
2
0 0 3 6 9 12 15 Qg , Total Gate Charge
IS , Source Current(A)
C , Capacitance(pF)
60
40 TJ=125° C
TJ=25° C 20
TJ=-20° C
0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0
VGS, Gate-To-Source Voltage(V)
Capacitance Characteristic
8.00E+02
8.0
7.00E+02
6.00E+02
5.00E+02 4.00E+02
Ciss
3.00E+02 2.00E+02 1.00E+02
Coss Crss
0.00E+00 0
5 10 15 20 25 30
VDS, Drain-To-Source Voltage(V)
Source-Drain Diode Forward Voltage
1.0E+03
1.0E+02 1.0E+01
TJ =150° C
1.0E+00 1.0E-01
TJ =25°C
1.0E-02 1.0E-03
1.0E-04 0.2
0.4 0.6 0.8 1.0 1.2
VSD, Source-To-Drain Voltage(V)
1.4
VGS , Gate-To-Source Voltage(V)
REV 1.0
Sep-09-2009 3
ID , Drain Current(A)
NIKO-SEM
N-Channel Logic Level Enhancement
P2003BDG
Mode Field Effect Transistor
TO-252 (DPAK) Halogen-Free & Lead-Free
Safe Operating Area
1000
Single Pulse Maximum Power Dissipation
500
Operation in This Area is Lim ite d by RDS(ON)
↓100
400 SINGLE PULSE RθJC = 3.6˚ C/W TC=25˚ C
300
Power(W)
100us 10
NOTE :
1.VGS= 10V 2.TC=25˚ C 3.RθJC = 3.6˚ C/W 4.Single Pulse
1m s 10m s
DC 1
1 10
VDS, Drain-To-Source Voltage(V)
200
100
0
100
0.0001
0.001
0.01
0.1
Single Pulse Time(s)
1.00E+01
Transient Thermal Response Curve
1
10
1.00E+00
Duty Cycle=0.5
1.00E-01
0.2
0.1 0.05 0.02
0.01
single Pluse
1.00E-02 1.E-05
1.E-04
1.E-03
1.E-02
T1 , Square Wave Pulse Duration[sec]
Note
1.Duty cycle, D= t1 / t2 2.RthJC = 3.6 oC/W
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC
1.E-01
1.E+00
r(t) , Normalized Effective Transient Thermal Resistance
REV 1.0
Sep-09-2009 4
NIKO-SEM
N-Channel Logic Level Enhancement
P2003BDG
Mode Field Effect Transi.