P1504BDG

NIKO-SEM N-Channel Logic Level Enhancement P1504BDG Mode Field Effect Transistor TO-252 (DPAK) Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 15mΩ ID 40A G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.3mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) VDS VGS ID IDM IAS EAS PD Tj, Tstg TL THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction-to-Case RθJc Junction-to-Ambient RθJA 1Pulse width limited by maximum junction temperature. 1. GATE 2. DRAIN 3. SOURCE LIMITS 40 ±20 40 25 85 22 72 42 17 -55 to 150 275 UNITS V V A A mJ W °C MAXIMUM 3 75 UNITS °C / W °C / W ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) STATIC VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 32V, VGS = 0V VDS = 30V, VGS = 0V, TC = 125 °C VDS = 10V, VGS = 10V LIMITS UNIT MIN TYP MAX 40 1.7 2.0 3.0 V ±250 nA 1 µA 10 85 A REV 1.1 1 Mar-11-2009 NIKO-SEM N-Channel Logic Level Enhancement P1504BDG Mode F...