N-CHANNEL MOSFET. CDM3-800 Datasheet

CDM3-800 MOSFET. Datasheet pdf. Equivalent

Part CDM3-800
Description N-CHANNEL MOSFET
Feature CDM3-800 SURFACE MOUNT SILICON N-CHANNEL POWER MOSFET 3.0 AMP, 800 VOLT DPAK CASE w w w. c e n t r .
Manufacture Central Semiconductor
Datasheet
Download CDM3-800 Datasheet



CDM3-800
CDM3-800
SURFACE MOUNT SILICON
N-CHANNEL
POWER MOSFET
3.0 AMP, 800 VOLT
DPAK CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CDM3-800 is a
800 volt N-Channel MOSFET designed for high voltage,
fast switching applications such as Power Factor
Correction (PFC), lighting and power inverters. This
MOSFET combines high voltage capability with low
rDS(ON), low threshold voltage, and low gate charge for
optimal efficiency.
MARKING: FULL PART NUMBER
APPLICATIONS:
Power Factor Correction
Alternative energy inverters
Solid State Lighting (SSL)
FEATURES:
High voltage capability (VDS=800V)
Low gate charge (Qg(tot)=11.3nC TYP)
Low rDS(ON) (3.8Ω TYP)
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (Steady State)
ID
Maximum Pulsed Drain Current, tp=10μs
IDM
Continuous Source Current (Body Diode)
IS
Maximum Pulsed Source Current (Body Diode)
ISM
Single Pulse Avalanche Energy (Note 1)
EAS
Power Dissipation
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
JC
Thermal Resistance
JA
Note 1: L=30mH, IAS=3.15A, VDD=100V, RG=25Ω, Initial TJ=25°C
800
30
3.0
12
3.0
12
173
80
-55 to +150
1.56
110
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN TYP
IGSSF, IGSSR VGS=30V, VDS=0
10
IDSS
VDS=800V, VGS=0
0.08
BVDSS
VGS=0, ID=250μA
800
VGS(th)
VGS=VDS, ID=250μA
2.0 3.0
VSD
VGS=0, IS=3.0A
0.98
rDS(ON)
VGS=10V, ID=1.5A
3.8
Crss
VDS=25V, VGS=0, f=1.0MHz
1.5
Ciss VDS=25V, VGS=0, f=1.0MHz
415
Coss
VDS=25V, VGS=0, f=1.0MHz
44
MAX
100
1.0
4.0
1.4
4.8
UNITS
V
V
A
A
A
A
mJ
W
°C
°C/W
°C/W
UNITS
nA
μA
V
V
V
Ω
pF
pF
pF
R1 (13-May 2015)



CDM3-800
CDM3-800
SURFACE MOUNT SILICON
N-CHANNEL
POWER MOSFET
3.0 AMP, 800 VOLT
ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
TYP UNITS
Qg(tot)
VDS=640V, VGS=10V, ID=3.0A (Note 2)
11.3
nC
Qgs VDS=640V, VGS=10V, ID=3.0A (Note 2) 2.55 nC
Qgd VDS=640V, VGS=10V, ID=3.0A (Note 2) 5.28 nC
td(on)
VDD=400V, ID=3.0A, RG=25Ω (Note 2)
10 ns
tr VDD=400V, ID=3.0A, RG=25Ω (Note 2)
23 ns
td(off)
VDD=400V, ID=3.0A, RG=25Ω (Note 2)
25 ns
tf VDD=400V, ID=3.0A, RG=25Ω (Note 2)
25 ns
trr VGS=0, IS=3.0A, di/dt=100A/μs (Note 2) 437 ns
Qrr VGS=0, IS=3.0A, di/dt=100A/μs (Note 2) 1.68 μC
Note 2: Pulse Width < 300μs, Duty Cycle < 2%
DPAK CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
w w w. c e n t r a l s e m i . c o m
LEAD CODE:
1) Gate
2) Drain
3) Source
4) Drain
Pin 2 is common to the tab (4)
MARKING: FULL PART NUMBER
R1 (13-May 2015)





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