C106D2

C106B2 C106D2 C106M2 SENSITIVE GATE SILICON CONTROLLED RECTIFIER 4 AMP, 200 THRU 600 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR C106B2 series types are 4.0A, PNPN sensitive gate triggering silicon controlled rectifiers with voltages ranging from 200V to 600V. These devices are designed for applications such as temperature, light and speed control, and remote warning and triggering applications. MARKING: FULL PART NUMBER TO-202-2 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL C106B2 Peak Repetitive Off-State Voltage VDRM, VRRM 200 RMS On-State Current (TC=85°C) IT(RMS) Peak One Cycle Surge Current, t=8.3ms ITSM I2t Value for Fusing I2t C106D2 400 4.0 20 1.65 C106M2 600 Peak Gate Power Dissipation (TC=80°C) Average Gate Power Dissipation (TC=80°C) Peak Forward Gate Current (TC=80°C) Operating Junction Temperature Storage Temperature Thermal Resistance Thermal Resistance PGM PG(AV) IGFM TJ Tstg ΘJC ΘJA 0.5 0.1 0.2 -40 to +110 -40 to +150 7.5 80 ELECTRICAL CHARACTERISTICS: (TJ=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ 10 IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ, TJ=110°C 100 VTM IT=4.0A 2.2 IGT VD=6.0V, RL=100Ω 200 IGT VD=6.0V, RL=100Ω, TJ=–40°C 500 VGT VD=6.0V, RL=100Ω 0.4 0.8 VGT VD=6.0V, RL=100Ω, TJ=–40°C 0.5 1.0 IH VD=12V 3.0 IH VD=12V, TJ=–40°C 6.0 IH VD=12V, TJ=110°C 2.0 IL VD=12V 5.0 IL VD=12V, TJ=–40°C 7.0 dv/dt ...