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CONTROLLED RECTIFIER. C106M2 Datasheet

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CONTROLLED RECTIFIER. C106M2 Datasheet






C106M2 RECTIFIER. Datasheet pdf. Equivalent




C106M2 RECTIFIER. Datasheet pdf. Equivalent





Part

C106M2

Description

SILICON CONTROLLED RECTIFIER



Feature


C106B2 C106D2 C106M2 SENSITIVE GATE SILI CON CONTROLLED RECTIFIER 4 AMP, 200 THR U 600 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEM ICONDUCTOR C106B2 series types are 4.0A , PNPN sensitive gate triggering silico n controlled rectifiers with voltages r anging from 200V to 600V. These devices are designed for applications such as temperature, light.
Manufacture

Central Semiconductor

Datasheet
Download C106M2 Datasheet


Central Semiconductor C106M2

C106M2; and speed control, and remote warning a nd triggering applications. MARKING: FU LL PART NUMBER TO-202-2 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise not ed) SYMBOL C106B2 Peak Repetitive Off- State Voltage VDRM, VRRM 200 RMS On-S tate Current (TC=85°C) IT(RMS) Peak One Cycle Surge Current, t=8.3ms ITSM I2t Value for Fusing I2t C106D2 400 4.0 20 1.65 C106M2 .


Central Semiconductor C106M2

600 Peak Gate Power Dissipation (TC=80 C) Average Gate Power Dissipation (TC= 80°C) Peak Forward Gate Current (TC=80 °C) Operating Junction Temperature Sto rage Temperature Thermal Resistance The rmal Resistance PGM PG(AV) IGFM TJ Tst g ΘJC ΘJA 0.5 0.1 0.2 -40 to +110 -4 0 to +150 7.5 80 ELECTRICAL CHARACTERI STICS: (TJ=25°C unless otherwise noted ) SYMBOL TEST CONDITIO.


Central Semiconductor C106M2

NS MIN TYP MAX IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ 10 IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ, TJ=110°C 100 VTM IT=4.0A 2.2 IGT VD=6.0V, RL=100 Ω 200 IGT VD=6.0V, RL=100Ω, TJ=–4 0°C 500 VGT VD=6.0V, RL=100Ω 0.4 0.8 VGT VD=6.0V, RL=100Ω, TJ=–40° C 0.5 1.0 IH VD=12V 3.0 IH VD=12V, TJ=–40°C 6.0 IH VD=12V, TJ=110°C 2.0 IL VD=12V 5.0 IL VD=12V, TJ.

Part

C106M2

Description

SILICON CONTROLLED RECTIFIER



Feature


C106B2 C106D2 C106M2 SENSITIVE GATE SILI CON CONTROLLED RECTIFIER 4 AMP, 200 THR U 600 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEM ICONDUCTOR C106B2 series types are 4.0A , PNPN sensitive gate triggering silico n controlled rectifiers with voltages r anging from 200V to 600V. These devices are designed for applications such as temperature, light.
Manufacture

Central Semiconductor

Datasheet
Download C106M2 Datasheet




 C106M2
C106B2
C106D2
C106M2
SENSITIVE GATE
SILICON CONTROLLED RECTIFIER
4 AMP, 200 THRU 600 VOLTS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR C106B2 series
types are 4.0A, PNPN sensitive gate triggering silicon
controlled rectifiers with voltages ranging from 200V
to 600V. These devices are designed for applications
such as temperature, light and speed control, and
remote warning and triggering applications.
MARKING: FULL PART NUMBER
TO-202-2 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL C106B2
Peak Repetitive Off-State Voltage
VDRM, VRRM 200
RMS On-State Current (TC=85°C)
IT(RMS)
Peak One Cycle Surge Current, t=8.3ms
ITSM
I2t Value for Fusing
I2t
C106D2
400
4.0
20
1.65
C106M2
600
Peak Gate Power Dissipation (TC=80°C)
Average Gate Power Dissipation (TC=80°C)
Peak Forward Gate Current (TC=80°C)
Operating Junction Temperature
Storage Temperature
Thermal Resistance
Thermal Resistance
PGM
PG(AV)
IGFM
TJ
Tstg
ΘJC
ΘJA
0.5
0.1
0.2
-40 to +110
-40 to +150
7.5
80
ELECTRICAL CHARACTERISTICS: (TJ=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN TYP MAX
IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ
10
IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ, TJ=110°C
100
VTM
IT=4.0A
2.2
IGT VD=6.0V, RL=100Ω
200
IGT VD=6.0V, RL=100Ω, TJ=–40°C
500
VGT
VD=6.0V, RL=100Ω
0.4 0.8
VGT
VD=6.0V, RL=100Ω, TJ=–40°C
0.5 1.0
IH VD=12V
3.0
IH VD=12V, TJ=–40°C
6.0
IH VD=12V, TJ=110°C
2.0
IL VD=12V
5.0
IL VD=12V, TJ=–40°C
7.0
dv/dt
VD=Rated VDRM, RGK=1.0KΩ, TJ=110°C
8.0
UNITS
V
A
A
A2s
W
W
A
°C
°C
°C/W
°C/W
UNITS
μA
μA
V
μA
μA
V
V
mA
mA
mA
mA
mA
V/μs
R1 (23-April 2012)




 C106M2
C106B2
C106D2
C106M2
SENSITIVE GATE
SILICON CONTROLLED RECTIFIER
4 AMP, 200 THRU 600 VOLTS
TO-202-2 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Cathode
2) Anode
3) Gate
Tab is common to pin 2
MARKING:
FULL PART NUMBER
w w w. c e n t r a l s e m i . c o m
R1 (23-April 2012)




 C106M2
OUTSTANDING SUPPORT AND SUPERIOR SERVICES
PRODUCT SUPPORT
Central’s operations team provides the highest level of support to insure product is delivered on-time.
• Supply management (Customer portals)
• Custom bar coding for shipments
• Inventory bonding
• Custom product packing
• Consolidated shipping options
DESIGNER SUPPORT/SERVICES
Central’s applications engineering team is ready to discuss your design challenges. Just ask.
• Free quick ship samples (2nd day air)
• Special wafer diffusions
• Online technical data and parametric search
• PbSn plating options
• SPICE models
• Package details
• Custom electrical curves
• Application notes
• Environmental regulation compliance
• Application and design sample kits
• Customer specific screening
• Custom product and package development
• Up-screening capabilities
REQUESTING PRODUCT PLATING
1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
CONTACT US
Corporate Headquarters & Customer Support Team
Central Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
Main Tel: (631) 435-1110
Main Fax: (631) 435-1824
Support Team Fax: (631) 435-3388
www.centralsemi.com
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which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms
w w w. c e n t r a l s e m i . c o m
(001)



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