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CMDSH-4E Datasheet, Equivalent, SCHOTTKY DIODE.SCHOTTKY DIODE SCHOTTKY DIODE |
| Part | CMDSH-4E |
|---|---|
| Description | SCHOTTKY DIODE |
| Feature | CMDSH-4E ENHANCED SPECIFICATION
SURFACE MOUNT SILICON SCHOTTKY DIODE
SOD-323 CA SE
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTO R CMDSH-4E is an enhanced version of th e CMDSH-3 silicon Schottky diode in an SOD-323 surface mount package. ENHANCED SPECIFICATIONS: ♦ IO from 100 mA MAX to 200 mA MAX ♦ BVR from 30V MIN to 40 V MIN ♦ VF from 1. 0 V MAX to 0. 8 V MAX MARKING CODE: S1E MAXIMUM RATINGS : (TA=25°C) ♦ Peak Repetitive Revers e Voltage ♦ Average Forward Current P eak Repetitive Forward Current Peak For ward Surge Current, tp=10ms Power Dissi pation Operating and Stor . |
| Manufacture | Central Semiconductor |
| Datasheet |
| Part | CMDSH-4E |
|---|---|
| Description | SCHOTTKY DIODE |
| Feature | CMDSH-4E ENHANCED SPECIFICATION
SURFACE MOUNT SILICON SCHOTTKY DIODE
SOD-323 CA SE
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTO R CMDSH-4E is an enhanced version of th e CMDSH-3 silicon Schottky diode in an SOD-323 surface mount package. ENHANCED SPECIFICATIONS: ♦ IO from 100 mA MAX to 200 mA MAX ♦ BVR from 30V MIN to 40 V MIN ♦ VF from 1. 0 V MAX to 0. 8 V MAX MARKING CODE: S1E MAXIMUM RATINGS : (TA=25°C) ♦ Peak Repetitive Revers e Voltage ♦ Average Forward Current P eak Repetitive Forward Current Peak For ward Surge Current, tp=10ms Power Dissi pation Operating and Stor . |
| Manufacture | Central Semiconductor |
| Datasheet |
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