CMDSH-4E ENHANCED SPECIFICATION
SURFACE MOUNT SILICON SCHOTTKY DIODE
SOD-323 CASE
w w w. c e n t r a l s e m i . c o m
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CMDSH-4E ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
SCHOTTKY DIODE
SOD-323 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDSH-4E is an enhanced version of the CMDSH-3 silicon
Schottky diode in an SOD-323 surface mount package.
ENHANCED SPECIFICATIONS: ♦ IO from 100 mA MAX to 200 mA MAX ♦ BVR from 30V MIN to 40 V MIN ♦ VF from 1.0 V MAX to 0.8 V MAX
MARKING CODE: S1E
MAXIMUM RATINGS: (TA=25°C) ♦ Peak Repetitive Reverse Voltage ♦ Average Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=10ms
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VRRM IO
IFRM IFSM PD TJ, Tstg ΘJA
40 200 350 750 250 -65 to +150 500
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN TYP
IR VR=25V
90
IR VR=25V, TA=100°C
25
♦ BVR
IR=100μA
40 50
VF IF=2.0mA
0.29
♦ VF
IF=15mA
0.37
♦ VF
IF=100mA
0.51
♦♦ VF
IF=200mA
0.65
CJ VR=1.0V, f=1.0MHz
7.0
trr IF=IR=10mA, Irr=1.0mA, RL=100Ω
♦ Enhanced specification. ♦♦ Additional Enhanced specification.
MAX 500 100
0.33 0.42 0.80 1.0
5.0
UNITS V mA mA mA
mW °C °C/W
UNITS nA μA V V V V V pF ns
R3 (11-February 2016)
CMDSH-4E ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
SCHOTTKY DIODE
SOD-323 CASE - MECHANICAL OUTLINE
LEAD CODE: 1) Cathode 2) Anode MARKING CODE: S1E
w w w. c e n t r a l s e m i . c o m
R3 (11-February 2016)
CMDSH-4E ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
SCHOTTKY DIODE
TYPICA...
