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SCHOTTKY DIODE. CMDSH-4E Datasheet

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SCHOTTKY DIODE. CMDSH-4E Datasheet






CMDSH-4E DIODE. Datasheet pdf. Equivalent




CMDSH-4E DIODE. Datasheet pdf. Equivalent





Part

CMDSH-4E

Description

SCHOTTKY DIODE



Feature


CMDSH-4E ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE SOD-323 CA SE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTO R CMDSH-4E is an enhanced version of th e CMDSH-3 silicon Schottky diode in an SOD-323 surface mount package. ENHANCED SPECIFICATIONS: ♦ IO from 100 mA MAX to 200 mA MAX ♦ BVR from 30V MIN to 40 V MIN ♦ VF from 1.0.
Manufacture

Central Semiconductor

Datasheet
Download CMDSH-4E Datasheet


Central Semiconductor CMDSH-4E

CMDSH-4E; V MAX to 0.8 V MAX MARKING CODE: S1E M AXIMUM RATINGS: (TA=25°C) ♦ Peak Rep etitive Reverse Voltage ♦ Average For ward Current Peak Repetitive Forward Cu rrent Peak Forward Surge Current, tp=10 ms Power Dissipation Operating and Stor age Junction Temperature Thermal Resist ance SYMBOL VRRM IO IFRM IFSM PD TJ, T stg ΘJA 40 200 350 750 250 -65 to +15 0 500 ELECTRICAL CHARAC.


Central Semiconductor CMDSH-4E

TERISTICS: (TA=25°C unless otherwise no ted) SYMBOL TEST CONDITIONS MIN TYP IR VR=25V 90 IR VR=25V, TA=100°C 25 ♦ BVR IR=100μA 40 50 VF IF=2.0m A 0.29 ♦ VF IF=15mA 0.37 ♦ VF IF=100mA 0.51 ♦♦ VF IF=200mA 0 .65 CJ VR=1.0V, f=1.0MHz 7.0 trr IF= IR=10mA, Irr=1.0mA, RL=100Ω ♦ Enhan ced specification. ♦♦ Additional En hanced specification. MAX 500 100 0.3.


Central Semiconductor CMDSH-4E

3 0.42 0.80 1.0 5.0 UNITS V mA mA mA mW °C °C/W UNITS nA μA V V V V V pF ns R3 (11-February 2016) CMDSH-4E ENHAN CED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE SOD-323 CASE - MECHANIC AL OUTLINE LEAD CODE: 1) Cathode 2) An ode MARKING CODE: S1E w w w. c e n t r a l s e m i . c o m R3 (11-February 20 16) CMDSH-4E ENHANCED SPECIFICATION SU RFACE MOUNT SILICON S.

Part

CMDSH-4E

Description

SCHOTTKY DIODE



Feature


CMDSH-4E ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE SOD-323 CA SE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTO R CMDSH-4E is an enhanced version of th e CMDSH-3 silicon Schottky diode in an SOD-323 surface mount package. ENHANCED SPECIFICATIONS: ♦ IO from 100 mA MAX to 200 mA MAX ♦ BVR from 30V MIN to 40 V MIN ♦ VF from 1.0.
Manufacture

Central Semiconductor

Datasheet
Download CMDSH-4E Datasheet




 CMDSH-4E
CMDSH-4E
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
SCHOTTKY DIODE
SOD-323 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMDSH-4E is an
enhanced version of the CMDSH-3 silicon Schottky
diode in an SOD-323 surface mount package.
ENHANCED SPECIFICATIONS:
IO from 100 mA MAX to 200 mA MAX
BVR from 30V MIN to 40 V MIN
VF from 1.0 V MAX to 0.8 V MAX
MARKING CODE: S1E
MAXIMUM RATINGS: (TA=25°C)
Peak Repetitive Reverse Voltage
Average Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=10ms
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VRRM
IO
IFRM
IFSM
PD
TJ, Tstg
ΘJA
40
200
350
750
250
-65 to +150
500
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN TYP
IR VR=25V
90
IR VR=25V, TA=100°C
25
BVR
IR=100μA
40 50
VF IF=2.0mA
0.29
VF
IF=15mA
0.37
VF
IF=100mA
0.51
♦♦ VF
IF=200mA
0.65
CJ VR=1.0V, f=1.0MHz
7.0
trr IF=IR=10mA, Irr=1.0mA, RL=100Ω
Enhanced specification.
♦♦ Additional Enhanced specification.
MAX
500
100
0.33
0.42
0.80
1.0
5.0
UNITS
V
mA
mA
mA
mW
°C
°C/W
UNITS
nA
μA
V
V
V
V
V
pF
ns
R3 (11-February 2016)




 CMDSH-4E
CMDSH-4E
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
SCHOTTKY DIODE
SOD-323 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Cathode
2) Anode
MARKING CODE: S1E
w w w. c e n t r a l s e m i . c o m
R3 (11-February 2016)




 CMDSH-4E
CMDSH-4E
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
SCHOTTKY DIODE
TYPICAL ELECTRICAL CHARACTERISTICS
w w w. c e n t r a l s e m i . c o m
R3 (11-February 2016)



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