SCHOTTKY DIODE. CMDSH-4E Datasheet

CMDSH-4E DIODE. Datasheet pdf. Equivalent

Part CMDSH-4E
Description SCHOTTKY DIODE
Feature CMDSH-4E ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE SOD-323 CASE w w w. c e n t r .
Manufacture Central Semiconductor
Datasheet
Download CMDSH-4E Datasheet



CMDSH-4E
CMDSH-4E
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
SCHOTTKY DIODE
SOD-323 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMDSH-4E is an
enhanced version of the CMDSH-3 silicon Schottky
diode in an SOD-323 surface mount package.
ENHANCED SPECIFICATIONS:
IO from 100 mA MAX to 200 mA MAX
BVR from 30V MIN to 40 V MIN
VF from 1.0 V MAX to 0.8 V MAX
MARKING CODE: S1E
MAXIMUM RATINGS: (TA=25°C)
Peak Repetitive Reverse Voltage
Average Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=10ms
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VRRM
IO
IFRM
IFSM
PD
TJ, Tstg
ΘJA
40
200
350
750
250
-65 to +150
500
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN TYP
IR VR=25V
90
IR VR=25V, TA=100°C
25
BVR
IR=100μA
40 50
VF IF=2.0mA
0.29
VF
IF=15mA
0.37
VF
IF=100mA
0.51
♦♦ VF
IF=200mA
0.65
CJ VR=1.0V, f=1.0MHz
7.0
trr IF=IR=10mA, Irr=1.0mA, RL=100Ω
Enhanced specification.
♦♦ Additional Enhanced specification.
MAX
500
100
0.33
0.42
0.80
1.0
5.0
UNITS
V
mA
mA
mA
mW
°C
°C/W
UNITS
nA
μA
V
V
V
V
V
pF
ns
R3 (11-February 2016)



CMDSH-4E
CMDSH-4E
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
SCHOTTKY DIODE
SOD-323 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Cathode
2) Anode
MARKING CODE: S1E
w w w. c e n t r a l s e m i . c o m
R3 (11-February 2016)





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