DatasheetsPDF.com

N-Channel MOSFET. CEDM7001 Datasheet

DatasheetsPDF.com

N-Channel MOSFET. CEDM7001 Datasheet






CEDM7001 MOSFET. Datasheet pdf. Equivalent




CEDM7001 MOSFET. Datasheet pdf. Equivalent





Part

CEDM7001

Description

N-Channel MOSFET



Feature


CEDM7001 SURFACE MOUNT SILICON N-CHANNE L ENHANCEMENT-MODE MOSFET SOT-883L CASE APPLICATIONS: • Load/Power switches • DC - DC converters • Battery powe red portable equipment w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7001 is an N- Channel Enhancement-mode silicon MOSFET , manufactured by the N-Channel DMOS Pr ocess, designed for high.
Manufacture

Central Semiconductor

Datasheet
Download CEDM7001 Datasheet


Central Semiconductor CEDM7001

CEDM7001; speed pulsed amplifier and driver appli cations. This MOSFET offers low rDS(ON) and low theshold voltage. MARKING CODE : H COMPLEMENTARY P-CHANNEL: CEDM8001 F EATURES: • 100mW Power Dissipation 0.4mm low package profile • Low rDS (ON) • Low threshold voltage • Logi c level compatible • Small leadless s urface mount package MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage.


Central Semiconductor CEDM7001

Gate-Source Voltage Continuous Drain Cu rrent (Steady State) Peak Drain Current , tp=10μs Power Dissipation Operating and Storage Junction Temperature SYMBO L VDS VGS ID IDM PD TJ, Tstg 20 10 100 200 100 -65 to +150 ELECTRICAL CHARAC TERISTICS: (TA=25°C unless otherwise n oted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=10V, VDS=0 IDSS VD S=20V, VGS=0 BVDSS .


Central Semiconductor CEDM7001

VGS=0, ID=100μA 20 VGS(th) VDS=VGS, ID=250μA 0.6 rDS(ON) VGS=4.0V, ID= 10mA 0.9 rDS(ON) VGS=2.5V, ID=10mA 1.3 rDS(ON) VGS=1.5V, ID=1.0mA gFS V DS=10V, ID=100mA 100 Crss VDS=3.0V, VGS=0, f=1.0MHz 4.0 Ciss VDS=3.0V, VG S=0, f=1.0MHz 9.0 Coss VDS=3.0V, VGS =0, f=1.0MHz 9.5 Qg(tot) VDS=10V, VG S=4.5V, ID=100mA 0.566 Qgs VDS=10V, V GS=4.5V, ID=100mA 0.

Part

CEDM7001

Description

N-Channel MOSFET



Feature


CEDM7001 SURFACE MOUNT SILICON N-CHANNE L ENHANCEMENT-MODE MOSFET SOT-883L CASE APPLICATIONS: • Load/Power switches • DC - DC converters • Battery powe red portable equipment w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7001 is an N- Channel Enhancement-mode silicon MOSFET , manufactured by the N-Channel DMOS Pr ocess, designed for high.
Manufacture

Central Semiconductor

Datasheet
Download CEDM7001 Datasheet




 CEDM7001
CEDM7001
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
SOT-883L CASE
APPLICATIONS:
• Load/Power switches
• DC - DC converters
• Battery powered portable equipment
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CEDM7001 is
an N-Channel Enhancement-mode silicon MOSFET,
manufactured by the N-Channel DMOS Process,
designed for high speed pulsed amplifier and driver
applications. This MOSFET offers low rDS(ON) and
low theshold voltage.
MARKING CODE: H
COMPLEMENTARY P-CHANNEL: CEDM8001
FEATURES:
• 100mW Power Dissipation
• 0.4mm low package profile
• Low rDS(ON)
• Low threshold voltage
• Logic level compatible
• Small leadless surface mount package
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Peak Drain Current, tp=10μs
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
VDS
VGS
ID
IDM
PD
TJ, Tstg
20
10
100
200
100
-65 to +150
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN TYP
IGSSF, IGSSR VGS=10V, VDS=0
IDSS
VDS=20V, VGS=0
BVDSS
VGS=0, ID=100μA
20
VGS(th)
VDS=VGS, ID=250μA
0.6
rDS(ON)
VGS=4.0V, ID=10mA
0.9
rDS(ON)
VGS=2.5V, ID=10mA
1.3
rDS(ON)
VGS=1.5V, ID=1.0mA
gFS VDS=10V, ID=100mA
100
Crss
VDS=3.0V, VGS=0, f=1.0MHz
4.0
Ciss VDS=3.0V, VGS=0, f=1.0MHz
9.0
Coss
VDS=3.0V, VGS=0, f=1.0MHz
9.5
Qg(tot)
VDS=10V, VGS=4.5V, ID=100mA
0.566
Qgs VDS=10V, VGS=4.5V, ID=100mA
0.16
Qgd VDS=10V, VGS=4.5V, ID=100mA
0.08
ton VDD=3.0V, VGS=2.5V, ID=10mA
50
toff VDD=3.0V, VGS=2.5V, ID=10mA
75
MAX
1.0
1.0
0.9
3.0
4.0
15
UNITS
V
V
mA
mA
mW
°C
UNITS
μA
μA
V
V
Ω
Ω
Ω
mS
pF
pF
pF
nC
nC
nC
ns
ns
R9 (19-September 2014)




 CEDM7001
CEDM7001
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
SOT-883L CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Gate
2) Source
3) Drain
MARKING CODE: H
Package Type Options (all dimensions are maximum - in mm)
Package
SOT-883L
Length
1.05
Width
0.65
Height
0.40
PD (mW)
100
SOT-883VL
1.05 0.65 0.32 100
SOT-953
1.05 1.05 0.50 250
SOT-523
1.70 1.70 0.78 250
Central Item Number
CEDM7001
CEDM7001VL
CMNDM7001
CMUDM7001
w w w. c e n t r a l s e m i . c o m
R9 (19-September 2014)




 CEDM7001
CEDM7001
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
w w w. c e n t r a l s e m i . c o m
R9 (19-September 2014)



Recommended third-party CEDM7001 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)