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Signal Transistor. CP337V Datasheet

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Signal Transistor. CP337V Datasheet






CP337V Transistor. Datasheet pdf. Equivalent




CP337V Transistor. Datasheet pdf. Equivalent





Part

CP337V

Description

Small Signal Transistor



Feature


PROCESS CP337V Small Signal Transistor N PN - Saturated Switch Transistor Chip PROCESS DETAILS Process Die Size Die Th ickness Base Bonding Pad Area Emitter B onding Pad Area Top Side Metalization B ack Side Metalization GEOMETRY EPITAXI AL PLANAR 29 x 29 MILS 7.1 MILS 11.8 x 4.5 MILS 11.8 x 4.5 MILS Al - 30,000Å Au-As - 13,000Å GROSS DIE PER 4 INCH W AFER 13,192 PRINCIPA.
Manufacture

Central Semiconductor

Datasheet
Download CP337V Datasheet


Central Semiconductor CP337V

CP337V; L DEVICE TYPES 2N3725A 2N4014 w w w. c e n t r a l s e m i . c o m R2 (29-Jun e 2011) PROCESS CP337V Typical Electri cal Characteristics w w w. c e n t r a l s e m i . c o m R2 (29-June 2011) BARE DIE PACKING OPTIONS BARE DIE IN TR AY (WAFFLE) PACK CT: Singulated die in tray (waffle) pack. (example: CP211-PA RT NUMBER-CT) CM: Singulated die in tr ay (waffle) pack 1.


Central Semiconductor CP337V

00% visually inspected as per MIL-STD-75 0, (method 2072 transistors, method 207 3 diodes). (example: CP211-PART NUMBER- CM) UNSAWN WAFER WN: Full wafer, unsaw n, 100% tested with reject die inked. ( example: CP211-PART NUMBER-WN) SAWN WA FER ON PLASTIC RING WR: Full wafer, sa wn and mounted on plastic ring, 100% te sted with reject die inked. (example: C P211-PART NUMBER-W.


Central Semiconductor CP337V

R) Please note: Sawn Wafer on Metal Fram e (WS) is possible as a special order. Please contact your Central Sales Repre sentative at 631-435-1110. Visit the Ce ntral website for a complete listing of specifications: www.centralsemi.com/bd specs w w w. c e n t r a l s e m i . c o m R2 (3-April 2017) OUTSTANDING SU PPORT AND SUPERIOR SERVICES PRODUCT SU PPORT Central’s o.

Part

CP337V

Description

Small Signal Transistor



Feature


PROCESS CP337V Small Signal Transistor N PN - Saturated Switch Transistor Chip PROCESS DETAILS Process Die Size Die Th ickness Base Bonding Pad Area Emitter B onding Pad Area Top Side Metalization B ack Side Metalization GEOMETRY EPITAXI AL PLANAR 29 x 29 MILS 7.1 MILS 11.8 x 4.5 MILS 11.8 x 4.5 MILS Al - 30,000Å Au-As - 13,000Å GROSS DIE PER 4 INCH W AFER 13,192 PRINCIPA.
Manufacture

Central Semiconductor

Datasheet
Download CP337V Datasheet




 CP337V
PROCESS CP337V
Small Signal Transistor
NPN - Saturated Switch Transistor Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
EPITAXIAL PLANAR
29 x 29 MILS
7.1 MILS
11.8 x 4.5 MILS
11.8 x 4.5 MILS
Al - 30,000Å
Au-As - 13,000Å
GROSS DIE PER 4 INCH WAFER
13,192
PRINCIPAL DEVICE TYPES
2N3725A
2N4014
w w w. c e n t r a l s e m i . c o m
R2 (29-June 2011)




 CP337V
PROCESS CP337V
Typical Electrical Characteristics
w w w. c e n t r a l s e m i . c o m
R2 (29-June 2011)




 CP337V
BARE DIE PACKING OPTIONS
BARE DIE IN TRAY (WAFFLE) PACK
CT: Singulated die in tray (waffle) pack.
(example: CP211-PART NUMBER-CT)
CM: Singulated die in tray (waffle) pack 100% visually inspected as
per MIL-STD-750, (method 2072 transistors, method 2073 diodes).
(example: CP211-PART NUMBER-CM)
UNSAWN WAFER
WN: Full wafer, unsawn, 100% tested with reject die inked.
(example: CP211-PART NUMBER-WN)
SAWN WAFER ON PLASTIC RING
WR: Full wafer, sawn and mounted on plastic ring,
100% tested with reject die inked.
(example: CP211-PART NUMBER-WR)
Please note: Sawn Wafer on Metal Frame (WS)
is possible as a special order. Please contact your
Central Sales Representative at 631-435-1110.
Visit the Central website for a complete listing of specifications:
www.centralsemi.com/bdspecs
w w w. c e n t r a l s e m i . c o m
R2 (3-April 2017)



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