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CP337V Datasheet, Equivalent, Signal Transistor.Small Signal Transistor Small Signal Transistor |
| Part | CP337V |
|---|---|
| Description | Small Signal Transistor |
| Feature | PROCESS CP337V
Small Signal Transistor
N PN - Saturated Switch Transistor Chip
PROCESS DETAILS Process Die Size Die Th ickness Base Bonding Pad Area Emitter B onding Pad Area Top Side Metalization B ack Side Metalization
GEOMETRY
EPITAXI AL PLANAR 29 x 29 MILS 7. 1 MILS 11. 8 x 4. 5 MILS 11. 8 x 4. 5 MILS Al - 30,000Å Au-As - 13,000Å GROSS DIE PER 4 INCH W AFER 13,192 PRINCIPAL DEVICE TYPES 2N37 25A 2N4014 w w w. c e n t r a l s e m i . c o m R2 (29-June 2011) PROCESS C P337V Typical Electrical Characteristic s w w w. c e n t r a l s e m i . c o m R2 (29-June 2011) BARE DIE PACKING O PTIONS BARE DIE . |
| Manufacture | Central Semiconductor |
| Datasheet |
| Part | CP337V |
|---|---|
| Description | Small Signal Transistor |
| Feature | PROCESS CP337V
Small Signal Transistor
N PN - Saturated Switch Transistor Chip
PROCESS DETAILS Process Die Size Die Th ickness Base Bonding Pad Area Emitter B onding Pad Area Top Side Metalization B ack Side Metalization
GEOMETRY
EPITAXI AL PLANAR 29 x 29 MILS 7. 1 MILS 11. 8 x 4. 5 MILS 11. 8 x 4. 5 MILS Al - 30,000Å Au-As - 13,000Å GROSS DIE PER 4 INCH W AFER 13,192 PRINCIPAL DEVICE TYPES 2N37 25A 2N4014 w w w. c e n t r a l s e m i . c o m R2 (29-June 2011) PROCESS C P337V Typical Electrical Characteristic s w w w. c e n t r a l s e m i . c o m R2 (29-June 2011) BARE DIE PACKING O PTIONS BARE DIE . |
| Manufacture | Central Semiconductor |
| Datasheet |
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