2N3020

2N3019 2N3020 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3019, 2N3020 types are NPN silicon transistors designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg 140 80 7.0 1.0 0.8 5.0 -65 to +200 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N3019 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=90V - 10 ICBO VCB=90V, TA=150°C - 10 IEBO VEB=5.0V - 10 BVCBO IC=100μA 140 - BVCEO IC=30mA 80 - BVEBO IE=100μA 7.0 - VCE(SAT) IC=150mA, IB=15mA - 0.2 VCE(SAT) IC=500mA, IB=50mA - 0.5 VBE(SAT) IC=150mA, IB=15mA - 1.1 hFE VCE=10V, IC=100μA 50 - hFE VCE=10V, IC=10mA 90 - hFE VCE=10V, IC=150mA 100 300 hFE VCE=10V, IC=150mA, TA=-55°C 40 - hFE VCE=10V, IC=500mA 50 - hFE VCE=10V, IC=1.0A 15 - fT VCE=10V, IC=50mA, f=20MHz 100 - Cob VCB=10V, IE=0, f=1.0MHz - 12 Cib VEB=0.5V, IC=0, f=1.0MHz - 60 rb’Cc VCE=10V, IC=10mA, f=4.0MHz - 400 NF VCE=10V, IC=100μA, f=1.0kHz, RS=1.0kΩ - 4.0 2N3020 MIN MAX - 10 - 10 - 10 140 80 7.0 - 0.2 - 0.5 - 1.1 30 100 40 120 40 120 -30 100 15 100 - 12 - 60 - 400 -- UNITS V V V A W W °C UNITS nA μA nA V V V V V V MHz pF pF ps dB R1 (11-June 2012) 2N3019 2N3020 NPN SI...