Power MOSFET. MVDF1N05E Datasheet

MVDF1N05E MOSFET. Datasheet pdf. Equivalent

Part MVDF1N05E
Description Power MOSFET
Feature MMDF1N05E, MVDF1N05E Power MOSFET 2 A, 50 V, N−Channel SO−8, Dual These miniature surface mount MO.
Manufacture ON Semiconductor
Datasheet
Download MVDF1N05E Datasheet



MVDF1N05E
MMDF1N05E, MVDF1N05E
Power MOSFET
2 A, 50 V, NChannel SO8, Dual
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
draintosource diode has a low reverse recovery time. These devices
are designed for use in low voltage, high speed switching applications
where power efficiency is important. Typical applications are dcdc
converters, and power management in portable and battery powered
products such as computers, printers, cellular and cordless phones.
They can also be used for low voltage motor controls in mass storage
products such as disk drives and tape drives. The avalanche energy is
specified to eliminate the guesswork in designs where inductive loads
are switched and offer additional safety margin against unexpected
voltage transients.
Features
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive Can Be Driven by Logic ICs
Miniature SO8 Surface Mount Package Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed
Avalanche Energy Specified
Mounting Information for SO8 Package Provided
IDSS Specified at Elevated Temperature
This is a PbFree Device
MVDF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage Continuous
Drain Current Continuous
Drain Current Pulsed
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 V, VGS = 10 V, IL = 2 Apk)
Operating and Storage Temperature Range
Total Power Dissipation @ TA = 25°C
Thermal Resistance, JunctiontoAmbient
(Note 1)
VDS 50 V
VGS ± 20 V
ID 2.0 A
IDM 10
EAS 300 mJ
TJ, Tstg
PD
RqJA
55 to 150
2.0
62.5
°C
W
°C/W
Maximum Temperature for Soldering,
Time in Solder Bath
TL 260 °C
10 Sec
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted on 2square FR4 board (1sq. 2 oz. Cu 0.06thick single sided) with
one die operating, 10 sec. max.
http://onsemi.com
2 AMPERE, 50 VOLTS
RDS(on) = 300 mW
NChannel
D
G
S
8
1
SO8
CASE 751
STYLE 11
MARKING
DIAGRAM
8
F1N05
AYWWG
G
1
F1N05 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Source1
Gate1
Source2
Gate2
18
27
36
45
Top View
Drain1
Drain1
Drain2
Drain2
ORDERING INFORMATION
Device
Package
Shipping
MMDF1N05ER2G SO8 2,500/Tape & Reel
(PbFree)
MVDF1N05ER2G SO8 2,500/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
December, 2012 Rev. 11
1
Publication Order Number:
MMDF1N05E/D



MVDF1N05E
MMDF1N05E, MVDF1N05E
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min Typ Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0, ID = 250 mA)
Zero Gate Voltage Drain Current
(VDS = 50 V, VGS = 0)
V(BR)DSS
IDSS
50
Vdc
2 mAdc
GateBody Leakage Current
(VGS = 20 Vdc, VDS = 0)
IGSS
− − 100 nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc)
DraintoSource OnResistance
(VGS = 10 Vdc, ID = 1.5 Adc)
(VGS = 4.5 Vdc, ID = 0.6 Adc)
Forward Transconductance (VDS = 15 V, ID = 1.5 A)
VGS(th) 1.0 3.0 Vdc
RDS(on)
RDS(on)
0.30
0.50
W
gFS 1.5 mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 3)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 10 V, ID = 1.5 A, RL = 10 W,
VG = 10 V, RG = 50 W)
Fall Time
Total Gate Charge
GateSource Charge
GateDrain Charge
(VDS = 10 V, ID = 1.5 A,
VGS = 10 V)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
330
160
50
− − 20
− − 30
− − 40
− − 25
12.5
1.9
3.0
pF
ns
nC
SOURCEDRAIN DIODE CHARACTERISTICS (TC = 25°C)
Forward Voltage (Note 2)
Reverse Recovery Time
(IS = 1.5 A, VGS = 0 V)
(dIS/dt = 100 A/ms)
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
3. Switching characteristics are independent of operating junction temperature.
VSD
trr
− − 1.6 V
45
ns
http://onsemi.com
2





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