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N-Channel MOSFET. FDMC7692 Datasheet |
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FDMC7692
N-Channel Power Trench® MOSFET General Description
30 V, 13.3 A, 8.5 m:
Features
This N-Channel MOSFET is produced using ON
Semiconductor’s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance. This
Max rDS(on) = 8.5 m: at VGS = 10 V, ID = 13.3 A
device is well suited for Power Management and load switching
Max rDS(on) = 11.5 m: at VGS = 4.5 V, ID = 10.6 A
applications common in Notebook Computers and Portable
Battery Packs.
High performance technology for extremely low rDS(on)
Termination is Lead-free and RoHS Compliant
Application
DC - DC Buck Converters
Notebook battery power management
Load switch in Notebook
Top Bottom
Pin 1
S SG
S
MLP 3.3x3.3
DD
D
D
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
16
13.3
40
58
29
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RTJC
RTJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
4.3
53
°C/W
Device Marking
FDMC7692
Device
FDMC7692
Package
MLP 3.3x3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2011 Semiconductor Components Industries, LLC.
October-2017, Rev.3
1
Publication Order Number:
FDMC7692/D
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Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
'BVDSS
'TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250 PA, VGS = 0 V
30
V
ID = 250 PA, referenced to 25 °C
16 mV/°C
VDS = 24 V, VGS = 0 V
TJ = 125 °C
VGS = 20 V, VDS = 0 V
1
PA
250
100 nA
On Characteristics
VGS(th)
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 PA
ID = 250 PA, referenced to 25 °C
VGS = 10 V, ID = 13.3 A
VGS = 4.5 V, ID = 10.6 A
VGS = 10 V, ID = 13.3 A, TJ = 125 °C
VDD = 5 V, ID = 13.3 A
1.2
1.9 3.0 V
-6 mV/°C
7.2 8.5
9.5 11.5 m:
9.5 12.0
60 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
1260
480
65
0.9
1680
635
100
2.4
pF
pF
pF
:
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 13.3 A,
VGS = 10 V, RGEN = 6 :
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 15 V
ID = 13.3 A
9 18 ns
4 10 ns
21 33 ns
3 10 ns
21 29 nC
10 14 nC
5 nC
3 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 13.3 A
VGS = 0 V, IS = 1.9 A
(Note 2)
(Note 2)
0.86 1.2
0.75 1.2
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 13.3 A, di/dt = 100 A/Ps
24 38 ns
7 14 nC
NOTES:
1. RTJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by
the user's board design.
a. 53 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0 %.
3. EAS of 58 mJ is based on starting TJ = 25 oC, L = 1 mH, IAS = 10.8 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.1 mH, I AS = 21 A.
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