NPN Transistor. TIP122 Datasheet

TIP122 Transistor. Datasheet pdf. Equivalent

Part TIP122
Description Silicon NPN Transistor
Feature TIP122 Silicon NPN Transistor Darlington Power Amp, Switch TO−220 Type Package Description: The TIP.
Manufacture NTE
Datasheet
Download TIP122 Datasheet



TIP122
TIP122
Silicon NPN Transistor
Darlington Power Amp, Switch
TO220 Type Package
Description:
The TIP122 is a silicon NPN Darlington transistor in a TO220 type package designed for general
purpose amplifier and lowspeed switching applications.
Features:
D High DC Current Gain: hFE = 2500 (Typ) at IC = 4A
D CollectorEmitter Sustaining Voltage: VCEO(sus) = 100V (Min) at IC = 100mA
D
Low CollectorEmitter Saturation Voltage:
Low CollectorEmitter Saturation Voltage:
VVCCEE((ssaatt))
=
=
2.0V
4.0V
(Max)
(Max)
at
at
IICC
=
=
3A
5A
Absolute Maximum Ratings: (Note 1)
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
CollectorBase Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
EmitterBase Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current,
Continuous
IC. .
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5A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120mA
Total
PDowerearteDiAsbsiopvaetio+n25(TCC
=
..
+25C),
.......
.P.D.
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. . . . 65W
0.52W/C
Total
PDowerearteDiAsbsiopvaetio+n25(TCA
= +25C),
.........
P. .D.
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. . . . . 2.0W
0.016W/C
Unclamped Inductive Load Energy (Note 2), E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mJ
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65to +150C
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.92C/W
Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W
Note 1. Stresses exceeding those listed in the Absolute Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be assumed, dam-
ages may occur and reliability may be affected.
Note 2. IC = 1A, L = 100mH, P.R.F. = 10Hz, VCC = 20V, RBE = 100.



TIP122
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
CollectorEmitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 3)
VCEO(sus)
ICBO
ICEO
IEBO
IC = 100mA, IB = 0, Note 3
VCB = 100V, IE = 0
VCE = 50V, IB = 0
VBE = 5V, IC = 0
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter On Voltage
Dynamic Characteristics
hFE
VCE(sat)
VBE(on)
VCE = 3V, IC = 500mA
VCE = 3V, IC = 3A
IC = 3A, IB = 12mA
IC = 5A, IB = 20mA
IC = 3A, VCE = 3V
SmallSignal Current Gain
Output Capacitance
hfe IC = 3A, VCE = 4V, f = 1MHz
Cob VCB = 10V, IE = 0, f = 0.1MHz
Note 3. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
Min Typ Max Unit
100
−−
−−
−−
V
0.2 mA
0.5 mA
2 mA
1000
1000
− − 2.0 V
− − 4.0 V
− − 2.5 V
4.0
− − 200 pF
C
B .420 (10.67)
Max
E .110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.070 (1.78) Max
Base
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Emitter
Collector/Tab





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