NPN Transistor. 2N2102 Datasheet

2N2102 Transistor. Datasheet pdf. Equivalent

Part 2N2102
Description Silicon NPN Transistor
Feature 2N2102 Silicon NPN Transistor General Purpose Amplifier and Switch TO−39 Type Package Description: .
Manufacture NTE
Datasheet
Download 2N2102 Datasheet



2N2102
2N2102
Silicon NPN Transistor
General Purpose Amplifier and Switch
TO39 Type Package
Description:
The 2N2102 is a silicon NPN transistor in a TO39 type package intended for a wide variety of small
signal and medium power applications in military and industrial equipment.
Absolute Maximum Ratings:
CollectorBase Voltage (IE = 0), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
CollectorEmitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V
CollectorEmitter Voltage (RBE 10), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
EmitterBase Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total
Device Dissipation,
TTAC
+25C
+25C
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1W
5W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65to +175C
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +30C/W
Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C/W
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
CollectorEmitter Breakdown Voltage
CollectorEmitter Sustaining Voltage
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
ICBO
IEBO
V(BR)CEO
VCEO(sus)
VCE(sat)
VCE(sat)
VCB = 60V
TC = +150C
VBE = 5V
IC = 100A, IE = 0
IC = 30mA, IB = 0, Note 1
IC = 150mA, IB = 15mA, Note 1
IC = 150mA, IB = 15mA, Note 1
Note 1. Pulse Test: Pulse Width + 300s, Duty Cycle 1%.
Min Typ Max Unit
− − 2 nA
− − 2 A
− − 5 nA
120 − − V
65 − − V
− − 0.5 V
− − 1.1 V



2N2102
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
DC Current Gain
High Frequency Current Gain
hFE VCE = 10V, Note 1 IC = 10A
IC = 100A
IC = 10mA
IC = 150mA
IC = 500mA
IC = 1A
hfe INCo=te510mA, VCE = 10V, f = 20MHz,
Noise Figure
CollectorBase Capacitance
EmitterBase Capacitance
NF
CCBO
CEBO
IBCW=
=3010HzA, ,RVgC=E
= 10V,
510
f
=
1KHz,
IE = 0 VCB = 10V, f = 1MHz
IC = 0 VEB = 500mV, f = 1MHz
Note 1. Pulse Test: Pulse Width + 300s, Duty Cycle 1%.
Min Typ Max Unit
10
20
35
40 120
25
10
6
− − 8 dB
− − 15 pF
− − 80 pF
.260
(6.6)
Max
.500
(12.7)
Min
.370 (9.39) Dia Max
.355 (9.03) Dia Max
Emitter
.018 (0.45)
Base
Collector/Case
45
.031 (.793)





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