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NPN Transistor. 2N2102 Datasheet

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NPN Transistor. 2N2102 Datasheet






2N2102 Transistor. Datasheet pdf. Equivalent




2N2102 Transistor. Datasheet pdf. Equivalent





Part

2N2102

Description

Silicon NPN Transistor



Feature


2N2102 Silicon NPN Transistor General Pu rpose Amplifier and Switch TO−39 Type Package Description: The 2N2102 is a silicon NPN transistor in a TO39 type p ackage intended for a wide variety of s mall− signal and medium power applica tions in military and industrial equipm ent. Absolute Maximum Ratings: Collec tor−Base Voltage (IE = 0), VCBO . . . . . . . . . . . . . . ..
Manufacture

NTE

Datasheet
Download 2N2102 Datasheet


NTE 2N2102

2N2102; . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collecto r−Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V Collector−Emitter Vo ltage (RBE 10), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter−Base Voltage (IC .


NTE 2N2102

= 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V C ollector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A T otal Device Dissipation, TTAC  +25C +25C . . . . .. .. . . .P.D. ... . . . . . .


NTE 2N2102

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W 5W Operating Junction Temperatu re, TJ . . . . . . . . . . . . . . . . . . . . . . . . . .

Part

2N2102

Description

Silicon NPN Transistor



Feature


2N2102 Silicon NPN Transistor General Pu rpose Amplifier and Switch TO−39 Type Package Description: The 2N2102 is a silicon NPN transistor in a TO39 type p ackage intended for a wide variety of s mall− signal and medium power applica tions in military and industrial equipm ent. Absolute Maximum Ratings: Collec tor−Base Voltage (IE = 0), VCBO . . . . . . . . . . . . . . ..
Manufacture

NTE

Datasheet
Download 2N2102 Datasheet




 2N2102
2N2102
Silicon NPN Transistor
General Purpose Amplifier and Switch
TO39 Type Package
Description:
The 2N2102 is a silicon NPN transistor in a TO39 type package intended for a wide variety of small
signal and medium power applications in military and industrial equipment.
Absolute Maximum Ratings:
CollectorBase Voltage (IE = 0), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
CollectorEmitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V
CollectorEmitter Voltage (RBE 10), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
EmitterBase Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total
Device Dissipation,
TTAC
+25C
+25C
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.P.D.
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1W
5W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65to +175C
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +30C/W
Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C/W
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
CollectorEmitter Breakdown Voltage
CollectorEmitter Sustaining Voltage
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
ICBO
IEBO
V(BR)CEO
VCEO(sus)
VCE(sat)
VCE(sat)
VCB = 60V
TC = +150C
VBE = 5V
IC = 100A, IE = 0
IC = 30mA, IB = 0, Note 1
IC = 150mA, IB = 15mA, Note 1
IC = 150mA, IB = 15mA, Note 1
Note 1. Pulse Test: Pulse Width + 300s, Duty Cycle 1%.
Min Typ Max Unit
− − 2 nA
− − 2 A
− − 5 nA
120 − − V
65 − − V
− − 0.5 V
− − 1.1 V




 2N2102
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
DC Current Gain
High Frequency Current Gain
hFE VCE = 10V, Note 1 IC = 10A
IC = 100A
IC = 10mA
IC = 150mA
IC = 500mA
IC = 1A
hfe INCo=te510mA, VCE = 10V, f = 20MHz,
Noise Figure
CollectorBase Capacitance
EmitterBase Capacitance
NF
CCBO
CEBO
IBCW=
=3010HzA, ,RVgC=E
= 10V,
510
f
=
1KHz,
IE = 0 VCB = 10V, f = 1MHz
IC = 0 VEB = 500mV, f = 1MHz
Note 1. Pulse Test: Pulse Width + 300s, Duty Cycle 1%.
Min Typ Max Unit
10
20
35
40 120
25
10
6
− − 8 dB
− − 15 pF
− − 80 pF
.260
(6.6)
Max
.500
(12.7)
Min
.370 (9.39) Dia Max
.355 (9.03) Dia Max
Emitter
.018 (0.45)
Base
Collector/Case
45
.031 (.793)







Recommended third-party 2N2102 Datasheet






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