DatasheetsPDF.com

RECTIFIER DIODES. EL1Z Datasheet

DatasheetsPDF.com

RECTIFIER DIODES. EL1Z Datasheet






EL1Z DIODES. Datasheet pdf. Equivalent




EL1Z DIODES. Datasheet pdf. Equivalent





Part

EL1Z

Description

ULTRA FAST RECOVERY RECTIFIER DIODES



Feature


www.eicsemi.com EL1Z PRV : 200 Volts Io : 1.5 Ampere ULTRA FAST RECOVERY RECTI FIER DIODES DO - 41 FEATURES : * High current capability * High surge current capability * High reliability * Low re verse current * Low forward voltage dro p * Fast switching for high efficiency * Pb / RoHS Free MECHANICAL DATA : * Ca se : DO-41 Molded plastic * Epoxy : UL9 4V-O rate flame re.
Manufacture

EIC

Datasheet
Download EL1Z Datasheet


EIC EL1Z

EL1Z; tardant * Lead : Axial lead solderable p er MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.339 gram 0.107 (2.7) 0.080 (2.0) 0 .034 (0.86) 0.028 (0.71) 1.00 (25.4) M IN. 0.205 (5.2) 0.166 (4.2) 1.00 (25.4) MIN. Dimensions in inches and ( milli meters ) MAXIMUM RATINGS AND ELECTRICA L CHARACTERISTICS .


EIC EL1Z

Rating at 25 °C ambient temperature unl ess otherwise specified. Single phase, half wave, 60 Hz, resistive or inductiv e load. For capacitive load, derate cur rent by 20%. RATING Maximum Peak Rever se Voltage Maximum Peak Reverse Surge V oltage Maximum Average Rectified Forwar d Current Maximum Peak Forward Surge Cu rrent ( 50 Hz, Half-cycle, Sine wave, S ingle Shot ) Maximu.


EIC EL1Z

m Forward Voltage at IF = 1.5 A Maximum Reverse Current at Reverse voltage Maxi mum Reverse Current at Reverse voltage Maximum Reverse Recovery Time ( Note 1 ) Junction Temperature Range Storage Te mperature Range Ta = 100 °C SYMBOL V RM VRSM IF(AV) IFSM VF IR IR(H) Trr TJ TSTG Notes : ( 1 ) Reverse Recovery Te st Conditions : IF = 100 mA, IRP = 100 mA. Page 1 of 2 VA.

Part

EL1Z

Description

ULTRA FAST RECOVERY RECTIFIER DIODES



Feature


www.eicsemi.com EL1Z PRV : 200 Volts Io : 1.5 Ampere ULTRA FAST RECOVERY RECTI FIER DIODES DO - 41 FEATURES : * High current capability * High surge current capability * High reliability * Low re verse current * Low forward voltage dro p * Fast switching for high efficiency * Pb / RoHS Free MECHANICAL DATA : * Ca se : DO-41 Molded plastic * Epoxy : UL9 4V-O rate flame re.
Manufacture

EIC

Datasheet
Download EL1Z Datasheet




 EL1Z
www.eicsemi.com
EL1Z
PRV : 200 Volts
Io : 1.5 Ampere
ULTRA FAST RECOVERY
RECTIFIER DIODES
DO - 41
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Peak Reverse Voltage
Maximum Peak Reverse Surge Voltage
Maximum Average Rectified Forward Current
Maximum Peak Forward Surge Current
( 50 Hz, Half-cycle, Sine wave, Single Shot )
Maximum Forward Voltage at IF = 1.5 A
Maximum Reverse Current at Reverse voltage
Maximum Reverse Current at Reverse voltage
Maximum Reverse Recovery Time ( Note 1 )
Junction Temperature Range
Storage Temperature Range
Ta = 100 °C
SYMBOL
VRM
VRSM
IF(AV)
IFSM
VF
IR
IR(H)
Trr
TJ
TSTG
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 100 mA, IRP = 100 mA.
Page 1 of 2
VALUE
200
200
1.5
20
0.98
100
500
50
- 40 to + 150
- 40 to + 150
UNIT
V
V
A
A
V
µA
µA
ns
°C
°C
Rev. 02 : March 25, 2005




 EL1Z
www.eicsemi.com
RATING AND CHARACTERISTIC CURVES ( EL1Z )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
100 µF
specimen
0.1 IRP
20µS
200µS
NOTE : IF = IRP = 100 mA TO 10 mA
Trr
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
1.5
1.2
0.9
0.6
0.3
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE, ( °C)
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
20
10
1.0
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
20
15
12
8
4
0
12
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 50Hz
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
10
TJ = 100 °C
1.0
0.1 Ta = 25 °C
0.01
0.001
0
0.4 0.8 1.2 1.6 2.0 2.4
FORWARD VOLTAGE, VOLTS
2.8
0.1
TJ = 25 °C
0.01
0 20 40
60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
Page 2 of 2
Rev. 02 : March 25, 2005










Recommended third-party EL1Z Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)