BAS16WS

BAS16WS Silicon Epitaxial Planar Switching Diode Features Fast switching diode PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 W2 Top View Marking Code: "W2" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Peak Reverse Voltage Forward Current (Continuous) HNon-repetitive Peak Forward Surge Current Power Dissipation CJunction Temperature Storage Temperature Range at t = 1 s at t = 1 ms at t = 1 μs Symbol VR VRM IF IFSM Ptot Tj Tstg Value 75 100 250 0.5 1 2 200 150 - 65 to + 150 TECharacteristics at Ta = 25 OC Parameter Forward Voltage Mat IF= 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA EReverse Leakage Current at VR = 75 V Sat VR = 25 V, TJ = 150 OC Symbol VF IR Max. 0.715 0.855 1 1.25 1 30 Unit V V mA A mW OC OC Unit V µA at VR = 75 V, TJ = 150 OC 50 Diode Capacitance at VR = 0 V, f = 1 MHz Ctot 2 pF Reverse Recovery Time at IF = 10 mA to IR = 10 mA, IR = 1 mA, RL = 100 Ω trr 6 ns SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 15/06/2009 BAS16WS SEMTECH SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 15/06/2009 BAS16WS PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 A CHE bp c HE DA TEUNIT SEMmm A 1.10 0.80 bp 0.40 0.25 C 0.15 0.10 D 1.80 1.60 E 1.35 1.15 HE 2.80 2.30 SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 15/06/2009 ...