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ZENER DIODES. MM3Z20B Datasheet

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ZENER DIODES. MM3Z20B Datasheet






MM3Z20B DIODES. Datasheet pdf. Equivalent




MM3Z20B DIODES. Datasheet pdf. Equivalent





Part

MM3Z20B

Description

SILICON PLANAR ZENER DIODES



Feature


MM3Z2V2B~MM3Z39B SILICON PLANAR ZENER DI ODES Features • Total power dissipati on : max. 300 mW • Small plastic pack age suitable for surface mounted design • High reliability Description Silic on planar Zener diode in a small plasti c SMD SOD-323 package Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Di ssipation Junction Temperature Storage Temperature Range Charac.
Manufacture

SEMTECH

Datasheet
Download MM3Z20B Datasheet


SEMTECH MM3Z20B

MM3Z20B; teristics at Ta = 25 OC Parameter Therma l Resistance Junction to Ambient Air Fo rward Voltage at IF = 10 mA PINNING PI N 1 2 1 DESCRIPTION Cathode Anode 2 T op View Simplified outline SOD-323 and symbol Symbol Ptot Tj TS Value 300 15 0 - 55 to + 150 Unit mW OC OC Symbol RthA VF Max. 625 0.9 Unit OC/W V SEM TECH ELECTRONICS LTD. (Subsidiary of Si no-Tech Internatio.


SEMTECH MM3Z20B

nal Holdings Limited, a company listed o n the Hong Kong Stock Exchange, Stock C ode: 724) ® Dated : 26/07/2008 MM3Z2 V2B~MM3Z39B Type Marking Code Zener Voltage Range 1) Vznom V lZT for mA VZT V MM3Z2V2B MF 2.2 5 2.08...2.33 MM3Z2V4B 7C 2.4 5 2.32.65 MM3Z2V7B 7D 2.7 5 2.652.95 MM3Z3V0B 7E 3.0 5 2.953.25 MM3Z3V3B 7F 3.3 5 3.253.5 5 MM3Z3V6B 7H 3.6.


SEMTECH MM3Z20B

5 3.63.845 MM3Z3V9B 7J 3.9 5 3.894. 16 MM3Z4V3B 7K 4.3 5 4.174.43 MM3Z4 V7B 7M 4.7 5 4.554.75 MM3Z5V1B 7N 5.1 5 4.985.2 MM3Z5V6B 7P 5.6 5 5. 495.73 MM3Z6V2B 7R 6.2 5 6.066.33 MM3Z6V8B 7X 6.8 5 6.656.93 MM3Z7V5B 7Y 7.5 5 7.287.6 MM3Z8V2B 7Z 8.2 5 8.028.36 MM3Z9V1B 8A 9.1 5 8.859.23 MM3Z10B 8B 10 5 9.7710.21 MM3Z11B 8C 11 5 10.7611.22.

Part

MM3Z20B

Description

SILICON PLANAR ZENER DIODES



Feature


MM3Z2V2B~MM3Z39B SILICON PLANAR ZENER DI ODES Features • Total power dissipati on : max. 300 mW • Small plastic pack age suitable for surface mounted design • High reliability Description Silic on planar Zener diode in a small plasti c SMD SOD-323 package Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Di ssipation Junction Temperature Storage Temperature Range Charac.
Manufacture

SEMTECH

Datasheet
Download MM3Z20B Datasheet




 MM3Z20B
MM3Z2V2B~MM3Z39B
SILICON PLANAR ZENER DIODES
Features
• Total power dissipation : max. 300 mW
Small plastic package suitable for
surface mounted design
• High reliability
Description
Silicon planar Zener diode in a small plastic
SMD SOD-323 package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
Thermal Resistance Junction to Ambient Air
Forward Voltage
at IF = 10 mA
PINNING
PIN
1
2
1
DESCRIPTION
Cathode
Anode
2
Top View
Simplified outline SOD-323 and symbol
Symbol
Ptot
Tj
TS
Value
300
150
- 55 to + 150
Unit
mW
OC
OC
Symbol
RthA
VF
Max.
625
0.9
Unit
OC/W
V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 26/07/2008




 MM3Z20B
MM3Z2V2B~MM3Z39B
Type
Marking
Code
Zener Voltage Range 1)
Vznom
V
lZT for
mA
VZT
V
MM3Z2V2B MF 2.2 5
2.08...2.33
MM3Z2V4B
7C 2.4
5
2.3…2.65
MM3Z2V7B
7D 2.7
5
2.65…2.95
MM3Z3V0B
7E 3.0 5
2.95…3.25
MM3Z3V3B 7F 3.3 5
3.25…3.55
MM3Z3V6B
7H 3.6
5
3.6…3.845
MM3Z3V9B 7J 3.9 5
3.89…4.16
MM3Z4V3B
7K 4.3 5
4.17…4.43
MM3Z4V7B
7M 4.7
5
4.55…4.75
MM3Z5V1B
7N 5.1
5
4.98…5.2
MM3Z5V6B
7P 5.6 5
5.49…5.73
MM3Z6V2B
7R 6.2
5
6.06…6.33
MM3Z6V8B
7X 6.8 5
6.65…6.93
MM3Z7V5B
7Y 7.5 5
7.28…7.6
MM3Z8V2B 7Z 8.2 5
8.02…8.36
MM3Z9V1B
8A 9.1 5
8.85…9.23
MM3Z10B
8B 10 5
9.77…10.21
MM3Z11B
8C 11 5 10.76…11.22
MM3Z12B
8D 12 5 11.74…12.24
MM3Z13B
8E 13 5 12.91…13.49
MM3Z15B
8F 15 5 14.34…14.98
MM3Z16B
8H 16 5 15.85…16.51
MM3Z18B
8J 18 5 17.56…18.35
MM3Z20B
8K 20 5 19.52…20.39
MM3Z22B
8M 22 5 21.54…22.47
MM3Z24B
8N 24 5 23.72…24.78
MM3Z27B
8P 27 5 26.19…27.53
MM3Z30B
8R 30 5 29.19…30.69
MM3Z33B
8X 33 5 32.15…33.79
MM3Z36B
8Y 36 5 35.07…36.87
MM3Z39B
8Z 39 5
37…41
1)
2)
VZ is tested with
ZZT is measured
pulses (20 ms).
at IZ by given a
very
small
A.C.
current
signal.
Dynamic Impedance 2)
ZZT (Max.)
100
100
110
120
120
100
100
100
100
80
60
60
40
30
30
30
30
30
30
37
42
50
65
85
100
120
150
200
250
300
100
at IZT
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Reverse Leakage Current
IR (Max.)
μA
120
120
120
50
20
10
5
5
2
2
1
1
0.5
0.5
0.5
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
2
at VR
V
0.7
1
1
1
1
1
1
1
1
1.5
2.5
3
3.5
4
5
6
7
8
9
10
11
12
13
15
17
19
21
23
25
27
30
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 26/07/2008




 MM3Z20B
MM3Z2V2B~MM3Z39B
300
200
100
0
0 25
100
Ambient Temperature: Ta (OC)
Derating Curve
150
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 26/07/2008



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