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NPN Transistor. MMBTSD2114 Datasheet

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NPN Transistor. MMBTSD2114 Datasheet






MMBTSD2114 Transistor. Datasheet pdf. Equivalent




MMBTSD2114 Transistor. Datasheet pdf. Equivalent





Part

MMBTSD2114

Description

NPN Transistor



Feature


MMBTSD2114 NPN Silicon Epitaxial Planar Transistor Absolute Maximum Ratings (T a = 25 OC) Parameter Collector Base Vol tage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Di ssipation Junction Temperature Storage Temperature Range 1) Single pulse, Pw = 100 ms TO-236 Plastic Package Symbol VCBO VCEO VEBO IC ICP Ptot Tj Tstg Va lue 25 20 12 0.5 1.
Manufacture

SEMTECH

Datasheet
Download MMBTSD2114 Datasheet


SEMTECH MMBTSD2114

MMBTSD2114; 1) 200 150 - 55 to + 150 Unit V V V A mW OC OC Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit DC Current Gain at VCE = 3 V, IC = 10 0 mA Current Gain Group V hFE 820 - 1800 - W 1200 - 2700 Collector Base Cutoff Current at VCB = 20 V ICBO - - 500 nA Emitter Base Cutoff Current a t VEB = 10 V IEBO - - 500 nA Collec tor Base Breakdown.


SEMTECH MMBTSD2114

Voltage at IC = 10 µA V(BR)CBO 25 - - V Collector Emitter Breakdown Vol tage at IC = 1 mA V(BR)CEO 20 - - V Emitter Base Breakdown Voltage at IE = 10 µA V(BR)EBO 12 - - V Colle ctor Emitter Saturation Voltage at IC = 500 mA, IB = 20 mA VCE(sat) - - 400 mV Transition Frequency at VCE = 10 V , -IE = 50 mA, f = 100 MHz fT - 350 - MHz Output Capacita.


SEMTECH MMBTSD2114

nce at VCB = 10 V, IE = 0 A, f = 1 MHz Cob - 8 - pF SEMTECH ELECTRONICS LTD. ® Dated:16/04/2015 Rev:01 MMBTSD 2114 SEMTECH ELECTRONICS LTD. ® Date d:16/04/2015 Rev:01 .

Part

MMBTSD2114

Description

NPN Transistor



Feature


MMBTSD2114 NPN Silicon Epitaxial Planar Transistor Absolute Maximum Ratings (T a = 25 OC) Parameter Collector Base Vol tage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Di ssipation Junction Temperature Storage Temperature Range 1) Single pulse, Pw = 100 ms TO-236 Plastic Package Symbol VCBO VCEO VEBO IC ICP Ptot Tj Tstg Va lue 25 20 12 0.5 1.
Manufacture

SEMTECH

Datasheet
Download MMBTSD2114 Datasheet




 MMBTSD2114
MMBTSD2114
NPN Silicon Epitaxial Planar Transistor
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
1) Single pulse, Pw = 100 ms
TO-236 Plastic Package
Symbol
VCBO
VCEO
VEBO
IC
ICP
Ptot
Tj
Tstg
Value
25
20
12
0.5
1 1)
200
150
- 55 to + 150
Unit
V
V
V
A
mW
OC
OC
Characteristics at Ta = 25 OC
Parameter
Symbol Min. Typ. Max. Unit
DC Current Gain
at VCE = 3 V, IC = 100 mA
Current Gain Group V
hFE
820
- 1800 -
W 1200 - 2700
Collector Base Cutoff Current
at VCB = 20 V
ICBO
-
- 500 nA
Emitter Base Cutoff Current
at VEB = 10 V
IEBO
-
- 500 nA
Collector Base Breakdown Voltage
at IC = 10 µA
V(BR)CBO
25
-
-
V
Collector Emitter Breakdown Voltage
at IC = 1 mA
V(BR)CEO
20
-
-
V
Emitter Base Breakdown Voltage
at IE = 10 µA
V(BR)EBO
12
-
-
V
Collector Emitter Saturation Voltage
at IC = 500 mA, IB = 20 mA
VCE(sat)
-
- 400 mV
Transition Frequency
at VCE = 10 V, -IE = 50 mA, f = 100 MHz
fT - 350 - MHz
Output Capacitance
at VCB = 10 V, IE = 0 A, f = 1 MHz
Cob - 8 - pF
SEMTECH ELECTRONICS LTD.
®
Dated16/04/2015 Rev01




 MMBTSD2114
MMBTSD2114
SEMTECH ELECTRONICS LTD.
®
Dated16/04/2015 Rev01







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