BC557C

Elektronische Bauelemente BC556, B, C BC557, A, B, C BC558, A, B, C FEATURES PNP Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 Power dissipation PCM: Collector current ICM: Collector-base voltage VCBO: 0.625 W (Tamb=25℃) - 0.1 A BC556 BC557 BC558 -80 -50 -30 V V V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1 2 3 1 23 1. COLLECTOR 2. BASE 3. EMITTER ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage Collector-emitter breakdown voltage BC556 BC557 BC558 BC556 BC557 BC558 VCBO Ic= -100µA , IE=0 VCEO = - 2mA, IB=0 Emitter-base breakdown voltage VEBO IE= -100µA, IC=0 Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain BC556 BC557 BC558 BC556 BC557 BC558 BC556 BC557 BC558 BC556 BC557 BC558 BC557A/558A BC556B/BC557B/BC558B BC556C/BC557C/BC558C Collector-emitter saturation voltage ICBO ICEO IEBO hFE(1) VCE(sat) VCB= -70V, IE=0 VCB= -45 V, IE=0 VCB= -25V, IE=0 VCE= -60 V, IB=0 VCE= -40 V, IB=0 VCE= -25 V, IB=0 VEB= -5V, IC=0 VCE=-5V, IC= -2mA I C=-100 mA, IB= -5mA Base-emitter saturation voltage VBE(sat) I C= -100 mA, IB=-5mA MIN -80 -50 -30 -65 -45 -30 -6 120 120 120 120 180 420 MAX UNIT V V V -0.1 µA -0.1 µA -0.1 µA 500 800 800 220 460 800 -0.3 V -1 V Transition frequency VCE= -5V, IC= -10mA fT f = 100MHz 150 MHz 01-Jun-2002 Rev. A Any changing of spec...