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PNP Transistor. BC558A Datasheet

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PNP Transistor. BC558A Datasheet






BC558A Transistor. Datasheet pdf. Equivalent




BC558A Transistor. Datasheet pdf. Equivalent





Part

BC558A

Description

PNP Transistor



Feature


Elektronische Bauelemente BC556, B, C B C557, A, B, C BC558, A, B, C FEATURES PNP Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & le ad-free TO-92 Power dissipation PCM: Collector current ICM: Collector-base voltage VCBO: 0.625 W (Tamb=25℃) - 0.1 A BC556 BC557 BC558 -80 -50 -30 V V V Operating and storage junction t emperature range TJ.
Manufacture

SeCoS

Datasheet
Download BC558A Datasheet


SeCoS BC558A

BC558A; , Tstg: -55℃ to +150℃ 1 2 3 1 23 1 . COLLECTOR 2. BASE 3. EMITTER ELECTRI CAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakd own voltage Collector-emitter breakdown voltage BC556 BC557 BC558 BC556 BC557 BC558 VCBO Ic= -100µA , IE=0 VCEO = - 2mA, IB=0 Emitter-base breakdown v oltage VEBO IE= -100µA,.


SeCoS BC558A

IC=0 Collector cut-off current Collect or cut-off current Emitter cut-off curr ent DC current gain BC556 BC557 BC558 BC556 BC557 BC558 BC556 BC557 BC558 BC5 56 BC557 BC558 BC557A/558A BC556B/BC557 B/BC558B BC556C/BC557C/BC558C Collecto r-emitter saturation voltage ICBO ICEO IEBO hFE(1) VCE(sat) VCB= -70V, IE=0 VCB= -45 V, IE=0 VCB= -25V, IE=0 VCE= - 60 V, IB=0 VCE= -4.


SeCoS BC558A

0 V, IB=0 VCE= -25 V, IB=0 VEB= -5V, IC= 0 VCE=-5V, IC= -2mA I C=-100 mA, IB= -5 mA Base-emitter saturation voltage VB E(sat) I C= -100 mA, IB=-5mA MIN -80 -50 -30 -65 -45 -30 -6 120 120 120 120 180 420 MAX UNIT V V V -0.1 µA -0.1 A -0.1 µA 500 800 800 220 460 800 -0. 3 V -1 V Transition frequency VCE= -5 V, IC= -10mA fT f = 100MHz 150 MHz 01-Jun-2002 Rev. A .

Part

BC558A

Description

PNP Transistor



Feature


Elektronische Bauelemente BC556, B, C B C557, A, B, C BC558, A, B, C FEATURES PNP Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & le ad-free TO-92 Power dissipation PCM: Collector current ICM: Collector-base voltage VCBO: 0.625 W (Tamb=25℃) - 0.1 A BC556 BC557 BC558 -80 -50 -30 V V V Operating and storage junction t emperature range TJ.
Manufacture

SeCoS

Datasheet
Download BC558A Datasheet




 BC558A
Elektronische Bauelemente
BC556, B, C
BC557, A, B, C
BC558, A, B, C
FEATURES PNP Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-92
Power dissipation
PCM:
Collector current
ICM:
Collector-base voltage
VCBO:
0.625 W (Tamb=25)
- 0.1 A
BC556
BC557
BC558
-80
-50
-30
V
V
V
Operating and storage junction temperature range
TJ, Tstg: -55to +150
1
2
3
1 23
1. COLLECTOR
2. BASE
3. EMITTER
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BC556
BC557
BC558
BC556
BC557
BC558
VCBO
Ic= -100µA , IE=0
VCEO = - 2mA, IB=0
Emitter-base breakdown voltage
VEBO
IE= -100µA, IC=0
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
BC556
BC557
BC558
BC556
BC557
BC558
BC556
BC557
BC558
BC556
BC557
BC558
BC557A/558A
BC556B/BC557B/BC558B
BC556C/BC557C/BC558C
Collector-emitter saturation voltage
ICBO
ICEO
IEBO
hFE(1)
VCE(sat)
VCB= -70V, IE=0
VCB= -45 V, IE=0
VCB= -25V, IE=0
VCE= -60 V, IB=0
VCE= -40 V, IB=0
VCE= -25 V, IB=0
VEB= -5V, IC=0
VCE=-5V, IC= -2mA
I C=-100 mA, IB= -5mA
Base-emitter saturation voltage
VBE(sat)
I C= -100 mA, IB=-5mA
MIN
-80
-50
-30
-65
-45
-30
-6
120
120
120
120
180
420
MAX UNIT
V
V
V
-0.1
µA
-0.1 µA
-0.1 µA
500
800
800
220
460
800
-0.3 V
-1 V
Transition frequency
VCE= -5V, IC= -10mA
fT
f = 100MHz
150
MHz
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 3




 BC558A
Elektronische Bauelemente
Typical Characteristics
-50
-45 IB = -400µA
-40 IB = -350µA
-35 IB = -300µA
-30
I
B
=
-250µA
-25
I
B
=
-200µA
-20
I
B
=
-150µA
-15 IB = -100µA
-10
-5 IB = -50µA
-0
-2 -4 -6 -8 -10 -12 -14 -16 -18 -20
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
-10
IC = -10 IB
-1 VBE(sat)
-0.1
VCE(sat)
-0.01
-0.1
-1 -10
IC[mA], COLLECTOR CURRENT
-100
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
f=1MHz
10 IE = 0
BC556, B, C
BC557, A, B, C
BC558, A, B, C
1000
VCE = -5V
100
10
1
-0.1 -1 -10
IC[mA], COLLECTOR CURRENT
Figure 2. DC current Gain
-100
-100
VCE = -5V
-10
-1
-0.1
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
VBE[V], BASE-EMITTER VOLTAGE
Figure 4. Base-Emitter On Voltage
1000
VCE = -5V
100
1
-1 -10 -100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
01-Jun-2002 Rev. A
10
-1
-10
IC[mA], COLLECTOR CURRENT
Figure 6. Current Gain Bandwidth Product
Any changing of specification will not be informed individual
Page 2 of 3




 BC558A
Elektronische Bauelemente
TO-92 PACKAGE OUTLINE DIMENSIONS
D
b
BC556, B, C
BC557, A, B, C
BC558, A, B, C
D1
e
e1
Symbol
A
A1
b
c
D
D1
E
e
e1
L
Ö
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Dimensions In Millimeters
Min Max
3.300
1.100
3.700
1.400
0.380
0.550
0.360
0.510
4.400
3.430
4.700
4.300
4.700
1.270TYP
2.440
14.100
2.640
14.500
1.600
0.000
0.380
Dimensions In Inches
Min Max
0.130
0.043
0.146
0.055
0.015
0.022
0.014
0.020
0.173
0.135
0.185
0.169
0.185
0.050TYP
0.096
0.555
0.104
0.571
0.063
0.000
0.015
Any changing of specification will not be informed individual
Page 3 of 3



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