Elektronische Bauelemente
BC556, B, C BC557, A, B, C BC558, A, B, C
FEATURES PNP Transistor
RoHS Compliant Product A ...
Elektronische Bauelemente
BC556, B, C BC557, A, B, C BC558, A, B, C
FEATURES
PNP Transistor
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
TO-92
Power dissipation
PCM: Collector current
ICM: Collector-base voltage
VCBO:
0.625 W (Tamb=25℃)
- 0.1 A
BC556 BC557 BC558
-80 -50 -30
V V V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
1 2 3
1 23
1. COLLECTOR 2. BASE 3. EMITTER
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage Collector-emitter breakdown voltage
BC556 BC557 BC558 BC556 BC557 BC558
VCBO
Ic= -100µA , IE=0
VCEO = - 2mA, IB=0
Emitter-base breakdown voltage
VEBO
IE= -100µA, IC=0
Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain
BC556
BC557
BC558
BC556
BC557
BC558
BC556
BC557
BC558 BC556 BC557 BC558 BC557A/558A BC556B/BC557B/BC558B BC556C/BC557C/BC558C
Collector-emitter saturation voltage
ICBO ICEO IEBO hFE(1) VCE(sat)
VCB= -70V, IE=0 VCB= -45 V, IE=0 VCB= -25V, IE=0 VCE= -60 V, IB=0 VCE= -40 V, IB=0 VCE= -25 V, IB=0
VEB= -5V, IC=0
VCE=-5V, IC= -2mA
I C=-100 mA, IB= -5mA
Base-emitter saturation voltage
VBE(sat)
I C= -100 mA, IB=-5mA
MIN -80 -50 -30 -65 -45 -30 -6
120 120 120 120 180 420
MAX UNIT
V
V
V -0.1
µA
-0.1 µA
-0.1 µA 500 800 800 220 460 800 -0.3 V -1 V
Transition frequency
VCE= -5V, IC= -10mA
fT
f = 100MHz
150
MHz
01-Jun-2002 Rev. A
Any changing of spec...