DatasheetsPDF.com

N-Channel MOSFET. SSBM3020-C Datasheet

DatasheetsPDF.com

N-Channel MOSFET. SSBM3020-C Datasheet






SSBM3020-C MOSFET. Datasheet pdf. Equivalent




SSBM3020-C MOSFET. Datasheet pdf. Equivalent





Part

SSBM3020-C

Description

Dual N-Channel MOSFET



Feature


Elektronische Bauelemente SSBM3020-C 20 A, 30V, RDS(O ) 14mΩ Dual -Ch Enhance ment Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSB M3020-C is the highest performance tren ch dual N-Ch MOSFETs with extreme high cell density, which provide excellent R DS(ON) and gate charge for most of the synchronous buck convert.
Manufacture

SeCoS

Datasheet
Download SSBM3020-C Datasheet


SeCoS SSBM3020-C

SSBM3020-C; er applications. The SSBM3020-C meet the RoHS and Green Product requirement wit h full function reliability approved. DFNW3x3-8DB FEATURES Battery Switch Lo ad Switch High Density Cell Design for Ultra Low RDS(ON) Excellent Package for Good Heat Dissipation Special Process Technology for High ESD Capability Gree n Device Available MARKING BM3020 =Da te Code REF. A B .


SeCoS SSBM3020-C

C D E F G Millimeter Min. Max. 2.90 2 .90 3.10 3.10 0.70 0.80 0.203 REF. 0 0.05 0.27 0.37 2.30 2.50 REF. H J K L M N - Millimeter Min. Max. 0.35 0. 42 0.45 0.62 0.89 1.092 0.25 REF. 0.3 5 REF. 0.65 BSC. -- PACKAGE INFORMAT ION Package MPQ DFNW3x3-8DB 5K Lea der Size 13 inch ORDER INFORMATION Pa rt Number Type SSBM3020-C Lead (Pb)-f ree and Halogen-fr.


SeCoS SSBM3020-C

ee ABSOLUTE MAXIMUM RATINGS (TA=25°C u nless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate -Source Voltage VGS Continuous Drain Current ID Pulsed Drain Current IDM Total Power Dissipation Lead Temperatu re for Soldering Purposes @1/8’’ fr om case for 10s PD TL Operating Junct ion and Storage Temperature Range TJ, TSTG Thermal Resistanc.

Part

SSBM3020-C

Description

Dual N-Channel MOSFET



Feature


Elektronische Bauelemente SSBM3020-C 20 A, 30V, RDS(O ) 14mΩ Dual -Ch Enhance ment Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSB M3020-C is the highest performance tren ch dual N-Ch MOSFETs with extreme high cell density, which provide excellent R DS(ON) and gate charge for most of the synchronous buck convert.
Manufacture

SeCoS

Datasheet
Download SSBM3020-C Datasheet




 SSBM3020-C
Elektronische Bauelemente
SSBM3020-C
20A, 30V, RDS(O ) 14mΩ
Dual -Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSBM3020-C is the highest performance trench
dual N-Ch MOSFETs with extreme high cell density,
which provide excellent RDS(ON) and gate charge for most
of the synchronous buck converter applications.
The SSBM3020-C meet the RoHS and Green Product
requirement with full function reliability approved.
DFNW3x3-8DB
FEATURES
Battery Switch
Load Switch
High Density Cell Design for Ultra Low RDS(ON)
Excellent Package for Good Heat Dissipation
Special Process Technology for High ESD Capability
Green Device Available
MARKING
BM3020
=Date Code
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
2.90
2.90
3.10
3.10
0.70 0.80
0.203 REF.
0 0.05
0.27 0.37
2.30 2.50
REF.
H
J
K
L
M
N
-
Millimeter
Min. Max.
0.35
0.42
0.45
0.62
0.89 1.092
0.25 REF.
0.35 REF.
0.65 BSC.
--
PACKAGE INFORMATION
Package
MPQ
DFNW3x3-8DB
5K
Leader Size
13 inch
ORDER INFORMATION
Part Number
Type
SSBM3020-C Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
IDM
Total Power Dissipation
Lead Temperature for Soldering Purposes
@1/8’’ from case for 10s
PD
TL
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Thermal Resistance Junction-Ambient 1
RθJA
http://www.SeCoSGmbH.com/
20-Feb-2020 Rev. A
Ratings
30
±20
20
100
1.5
260
-55~150
Unit
V
V
A
A
W
°C
°C
83.3 °C/W
Any changes of specification will not be informed individually.
Page 1 of 3




 SSBM3020-C
Elektronische Bauelemente
SSBM3020-C
20A, 30V, RDS(O ) 14mΩ
Dual -Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max.
Drain-Source Breakdown Voltage
Gate Threshold Voltage 2
Forward Transconductance 2
BVDSS
VGS(th)
gfs
30
1
15
-
-
-
-
3
-
Gate-Source Leakage Current
Drain-Source Leakage Current
IGSS - - ±100
IDSS - - 1
Static Drain-Source On-Resistance 2
- 8.5 14
RDS(ON)
- 11.5 18
Total Gate Charge
Gate-Source Charge
Qg - 13 -
Qgs - 3 -
Gate-Drain Change
Turn-on Delay Time
Rise Time
Qgd
Td(on)
Tr
- 4.5 -
- 10 -
-8-
Turn-off Delay Time
Fall Time
Td(off)
- 30 -
Tf - 5 -
Input Capacitance
Ciss - 823 -
Output Capacitance
Coss
- 138 -
Reverse Transfer Capacitance
Crss - 100
Source-Drain Diode
-
Continuous Source Current
IS - - 20
Pulsed Source Current
Diode Forward Voltage 2
ISM - - 100
VSD - - 1.2
Reverse Recovery Time
trr - 22 35
Reverse Recovery Charge
Qrr -
Notes:
1. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm.
2. Pulse Test: Pulse Width≤300µs, duty cycle ≤2%.
12
20
Unit
V
V
S
nA
µA
mΩ
nC
Test Conditions
VGS=0, ID=250µA
VDS=VGS, ID=250µA
VDS=5V, ID=20A
VGS=±20V
VDS=30V, VGS=0
VGS=10V, ID=10A
VGS=4.5V, ID=10A
ID=10A
VDS=15V
VGS=10V
VDD=15V
nS
VGS=10V
RL=1.8Ω
RGEN=1.8Ω
VGS=0
pF VDS=15V
f=1MHz
A
V VGS=0, IS=1A
nS IF=10A, dI/dt=100A/µs,
nC TJ=25°C
http://www.SeCoSGmbH.com/
20-Feb-2020 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 3




 SSBM3020-C
Elektronische Bauelemente
TYPICAL CHARACTERISTIC
SSBM3020-C
20A, 30V, RDS(O ) 14mΩ
Dual -Ch Enhancement Mode Power MOSFET
http://www.SeCoSGmbH.com/
20-Feb-2020 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 3



Recommended third-party SSBM3020-C Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)