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Protection Diode. SBESD24C-C Datasheet

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Protection Diode. SBESD24C-C Datasheet






SBESD24C-C Diode. Datasheet pdf. Equivalent




SBESD24C-C Diode. Datasheet pdf. Equivalent





Part

SBESD24C-C

Description

Bi-Direction ESD Protection Diode



Feature


Elektronische Bauelemente SBESD24C-C 27 5W, 24V Bi-Direction ESD Protection Dio de RoHS Compliant Product A suffix of “-C” specifies halogen and lead-fre e DESCRIPTION Designed to protect volta ge sensitive electronic components from ESD and other transients. Excellent cl amping capability, low leakage, low cap acitance, and fast response time ,make these parts ideal for .
Manufacture

SeCoS

Datasheet
Download SBESD24C-C Datasheet


SeCoS SBESD24C-C

SBESD24C-C; ESD protection on designs where board sp ace is at a premium. Because of its sma ll size, it is suited for use in digita l cameras, cellular phones, MP3 players and many other portable applications w here board space is at a premium. DFN1 006 FEATURES Bi-directional ESD protec tion of one line Low capacitance Fast r esponse time JESD22-A114-B ESD Rating o f class 3B per hum.


SeCoS SBESD24C-C

an body model IEC 61000-4-2 Level 4 ESD protection MARKING PACKAGE INFORMATION Package MPQ DFN1006 10K Leader Si ze 7 inch REF. A B C D Millimeter Min . Max. 0.95 1.08 0.55 0.68 0.4 0.55 0.0 7 0.17 REF. E F G H Millimeter Min. M ax. 0.65BSC 0.4 0.6 0.2 0.3 0.2 0.3 OR DER INFORMATION Part Number Type SBES D24C-C Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM.


SeCoS SBESD24C-C

RATINGS (TA=25°C unless otherwise note d.) Parameter Symbol ESD per IEC 610 00−4−2 JESD22-A114-B ESD Voltage A ir Contact Per Human Body Model Machine Model VESD 1 Peak Pulse Power @tp=8/ 20µs PPP Peak Pulse Current @tp=8/20 µs IPP Maximum Lead Solder Temperatu re(10 Second Duration) TL Operating J unction and Storage Temperature Range TJ, TSTG Ratings ±30 ±30.

Part

SBESD24C-C

Description

Bi-Direction ESD Protection Diode



Feature


Elektronische Bauelemente SBESD24C-C 27 5W, 24V Bi-Direction ESD Protection Dio de RoHS Compliant Product A suffix of “-C” specifies halogen and lead-fre e DESCRIPTION Designed to protect volta ge sensitive electronic components from ESD and other transients. Excellent cl amping capability, low leakage, low cap acitance, and fast response time ,make these parts ideal for .
Manufacture

SeCoS

Datasheet
Download SBESD24C-C Datasheet




 SBESD24C-C
Elektronische Bauelemente
SBESD24C-C
275W, 24V
Bi-Direction ESD Protection Diode
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
Designed to protect voltage sensitive electronic
components from ESD and other transients.
Excellent clamping capability, low leakage, low
capacitance, and fast response time ,make these
parts ideal for ESD protection on designs where board
space is at a premium. Because of its small size, it is
suited for use in digital cameras, cellular phones,
MP3 players and many other portable applications where
board space is at a premium.
DFN1006
FEATURES
Bi-directional ESD protection of one line
Low capacitance
Fast response time
JESD22-A114-B ESD Rating of class 3B per human body model
IEC 61000-4-2 Level 4 ESD protection
MARKING
PACKAGE INFORMATION
Package
MPQ
DFN1006
10K
Leader Size
7 inch
REF.
A
B
C
D
Millimeter
Min. Max.
0.95 1.08
0.55 0.68
0.4 0.55
0.07 0.17
REF.
E
F
G
H
Millimeter
Min. Max.
0.65BSC
0.4 0.6
0.2 0.3
0.2 0.3
ORDER INFORMATION
Part Number
Type
SBESD24C-C
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted.)
Parameter
Symbol
ESD per IEC 61000−4−2
JESD22-A114-B ESD Voltage
Air
Contact
Per Human Body Model
Machine Model
VESD 1
Peak Pulse Power @tp=8/20µs
PPP
Peak Pulse Current @tp=8/20µs
IPP
Maximum Lead Solder Temperature(10 Second Duration)
TL
Operating Junction and Storage Temperature Range
TJ, TSTG
Ratings
±30
±30
±16
±0.4
275
5
260
150, -55~150
Unit
kV
W
A
°C
°C
http://www.SeCoSGmbH.com/
10-Apr-2020 Rev. C
Any changes of specification will not be informed individually.
Page 1 of 3




 SBESD24C-C
Elektronische Bauelemente
SBESD24C-C
275W, 24V
Bi-Direction ESD Protection Diode
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted.)
Parameter
Symbol
Min.
Reverse Stand-Off Voltage
Reverse Breakdown Voltage @IT=1mA
VRWM
VBR
-
26.7
Reverse Leakage Current @VRWM=24V
IR
-
Clamping Voltage @IPP=1A
VC -
Junction Capacitance @VR=0, f=1MHz
CJ
Note:
1. Device stressed with ten non-repetitive ESD pulses.
-
ELECTRICAL PARAMETER
Typ.
-
-
-
35
20
Max.
24
-
0.2
-
-
Unit
V
V
µA
V
pF
ESD STANDARDS COMPLIANCE
http://www.SeCoSGmbH.com/
10-Apr-2020 Rev. C
Any changes of specification will not be informed individually.
Page 2 of 3




 SBESD24C-C
Elektronische Bauelemente
TYPICAL CHARACTERISTICS
SBESD24C-C
275W, 24V
Bi-Direction ESD Protection Diode
http://www.SeCoSGmbH.com/
10-Apr-2020 Rev. C
Any changes of specification will not be informed individually.
Page 3 of 3



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