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P-Channel MOSFET. SSG13P03-C Datasheet

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P-Channel MOSFET. SSG13P03-C Datasheet
















SSG13P03-C MOSFET. Datasheet pdf. Equivalent













Part

SSG13P03-C

Description

P-Channel MOSFET



Feature


Elektronische Bauelemente SSG13P03-C -1 3A, -30V, RDS(ON) 15mΩ P-Ch Enhanceme nt Mode Power MOSFET RoHS Compliant Pr oduct A suffix of “-C” specifies ha logen & lead-free DESCRIPTION The SSG13 P03-C is the highest performance trench P-Ch MOSFETs with extreme high cell de nsity, which provide excellent RDS(ON) and gate charge for most of the synchro nous buck converter appl.
Manufacture

SeCoS

Datasheet
Download SSG13P03-C Datasheet


SeCoS SSG13P03-C

SSG13P03-C; ications. The SSG13P03-C meet the RoHS a nd Green Product requirement with full function reliability approved. FEATURE S Advanced High Cell Density Trench Tec hnology Super Low Gate Charge Green Dev ice Available MARKING 13P03SC Date Co de PACKAGE INFORMATION Package MPQ SOP-8 3K Leader Size 13 inch ORDER I NFORMATION Part Number Type SSG13P03- C Lead (Pb)-free .


SeCoS SSG13P03-C

and Halogen-free SOP-8 B LD M A HG C JK F N E REF. A B C D E F G Millime ter Min. Max. 5.79 6.20 4.70 5.11 3.80 4.00 0° 8° 0.40 1.27 0.10 0.25 1.27 T YP. REF. H J K L M N Millimeter Min. Max. 0.33 0.51 0.375 REF. 45°REF. 1.3 1.752 0 0.25 0.25 REF. SD SD SD GD AB SOLUTE MAXIMUM RATINGS Parameter Symbo l Drain-Source Voltage VDS Gate-Sour ce Voltage VGS TC=2.


SeCoS SSG13P03-C

5°C Continuous Drain Current 1, @VGS=1 0V TC=100°C TA=25°C ID Pulsed Drai n Current 3 TA=70°C IDM Total Power Dissipation TA=25°C PD Operating J unction & Storage Temperature Range The rmal Resistance Junction-Ambient 1 Ther mal Resistance Junction-Ambient 2 Therm al Resistance Junction-Case 1 TJ, TSTG Thermal Data RθJA RθJC http://www.S eCoSGmbH.com/ 29-May-2018.





Part

SSG13P03-C

Description

P-Channel MOSFET



Feature


Elektronische Bauelemente SSG13P03-C -1 3A, -30V, RDS(ON) 15mΩ P-Ch Enhanceme nt Mode Power MOSFET RoHS Compliant Pr oduct A suffix of “-C” specifies ha logen & lead-free DESCRIPTION The SSG13 P03-C is the highest performance trench P-Ch MOSFETs with extreme high cell de nsity, which provide excellent RDS(ON) and gate charge for most of the synchro nous buck converter appl.
Manufacture

SeCoS

Datasheet
Download SSG13P03-C Datasheet




 SSG13P03-C
Elektronische Bauelemente
SSG13P03-C
-13A, -30V, RDS(ON) 15m
P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG13P03-C is the highest performance trench
P-Ch MOSFETs with extreme high cell density, which
provide excellent RDS(ON) and gate charge for most of
the synchronous buck converter applications.
The SSG13P03-C meet the RoHS and Green Product
requirement with full function reliability approved.
FEATURES
Advanced High Cell Density Trench Technology
Super Low Gate Charge
Green Device Available
MARKING
13P03SC
Date Code
PACKAGE INFORMATION
Package
MPQ
SOP-8
3K
Leader Size
13 inch
ORDER INFORMATION
Part Number
Type
SSG13P03-C
Lead (Pb)-free and Halogen-free
SOP-8
B
LD
M
A
HG
C
JK
F
N
E
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.79 6.20
4.70 5.11
3.80 4.00
0° 8°
0.40 1.27
0.10 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.33 0.51
0.375 REF.
45°REF.
1.3 1.752
0 0.25
0.25 REF.
SD
SD
SD
GD
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain Current 1, @VGS=10V
TC=100°C
TA=25°C
ID
Pulsed Drain Current 3
TA=70°C
IDM
Total Power Dissipation
TA=25°C
PD
Operating Junction & Storage Temperature Range
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Ambient 2
Thermal Resistance Junction-Case 1
TJ, TSTG
Thermal Data
RθJA
RθJC
http://www.SeCoSGmbH.com/
29-May-2018 Rev. B
Ratings
-30
±20
-13
-9.1
-8.2
-6.6
-50
1.5
-55~150
Unit
V
V
A
A
W
°C
83
125 °C/W
25
Any changes of specification will not be informed individually.
Page 1 of 4




 SSG13P03-C
Elektronische Bauelemente
SSG13P03-C
-13A, -30V, RDS(ON) 15m
P-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol Min. Typ.
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current
TJ=25°C
TJ=55°C
Static Drain-Source On-Resistance 4
BVDSS
VGS(th)
gfs
IGSS
IDSS
RDS(ON)
-30
-1
-
-
-
-
-
-
-
-
24
-
-
-
-
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Qg - 21.8
Qgs - 7.9
Qgd - 6.5
Td(on)
-
10
Tr - 39
Td(off) - 71.2
Tf - 28.6
Ciss - 2215
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current 1
Pulsed Source Current 3
Diode Forward Voltage 4
Reverse Recovery Time
Coss - 310
Crss - 237
Source-Drain Diode
IS -
ISM -
VSD -
Trr -
-
-
-
16
Reverse Recovery Charge
Qrr
Notes:
1.
2.
3.
4.
Surface Mounted on 1”x1” FR4 Board with 2OZ copper.
When mounted on Min. Copper pad.
Pulse width limited by maximum junction temperature.
Pulse Test: Pulse Width300µs, Duty Cycle2%.
-
8
Max.
-
-2.5
-
±100
-1
-5
15
25
-
-
-
-
-
-
-
-
-
-
-8.2
-16.4
-1.2
-
-
Unit
Test Conditions
V VGS=0, ID= -250µA
V VDS=VGS, ID= -250µA
S VDS= -5V, ID= -8A
nA VGS= ±20V
VDS= -24V, VGS=0
µA
V DS= -24V, VGS=0
VGS= -10V, ID= -8A
m
VGS= -4.5V, ID= -6A
ID= -8A
nC VDS= -15V
VGS= -4.5V
VDD= -15V
nS ID= -8A
VGS= -10V
RG=3.3
VGS=0
pF VDS= -15V
f=1MHz
A
V VGS=0, IS= -1A, TJ=25°C
nS IF= -13A, dI/dt=100A/µs,
nC TJ=25°C
http://www.SeCoSGmbH.com/
29-May-2018 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4




 SSG13P03-C
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSG13P03-C
-13A, -30V, RDS(ON) 15m
P-Ch Enhancement Mode Power MOSFET
http://www.SeCoSGmbH.com/
29-May-2018 Rev. B
Any changes of specification will not be informed individually.
Page 3 of 4




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