SSN318NE-C

Elektronische Bauelemente SSN318NE-C 0.25A , 60V, RDS(ON) 1.6Ω N-Channel Enhancement MOSFET FEATURES 60V/250mA RDS(ON)≦1.6Ω@VGS=10V RDS(ON)≦2Ω@VGS=4.5V RDS(ON)≦4.5Ω@VGS=2.5V Reliable and Rugged Green Device Available ESD Protection RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-723 1 GATE 2 SOURCE 3 DRAIN MARKING 318 PACKAGE INFORMATION Package MPQ SOT-723 8K Leader Size 7 inch ORDER INFORMATION Part Number Type SSN318NE-C Lead (Pb)-free and Halogen-free REF. A B C D E Millimeter Min. Max. 1.150 1.250 0.750 0.850 - 0.500 1.150 1.250 0.800TYP. REF. F G H I Millimeter Min. Max. 0.170 0.270 0.270 0.370 0 0.050 - 0.150 Top View MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current @VGS=10V 1 Pulsed Drain Current 2 TA=25°C TA=85°C ID IDM Total Power Dissipation TA=25°C PD Operating Junction & Storage Temperature Range TJ, TSTG Thermal Resistance Ratings Thermal Resistance Junction-ambient 1 RθJA Ratings 60 ±20 0.25 0.18 1 150 -55~150 833 Unit V V A A mW °C °C / W http://www.SeCoSGmbH.com/ 19-Mar-2020 Rev. C Any changes of specification will not be informed individually. Page 1 of 4 Elektronische Bauelemente SSN318NE-C 0.25A , 60V, RDS(ON) 1.6Ω N-Channel Enhancement MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Drain-Source Breakdown Voltage BVDSS 60 - - Ga...