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N-Channel MOSFET. SSN318NE-C Datasheet

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N-Channel MOSFET. SSN318NE-C Datasheet






SSN318NE-C MOSFET. Datasheet pdf. Equivalent




SSN318NE-C MOSFET. Datasheet pdf. Equivalent





Part

SSN318NE-C

Description

N-Channel MOSFET



Feature


Elektronische Bauelemente SSN318NE-C 0. 25A , 60V, RDS(ON) 1.6Ω N-Channel Enh ancement MOSFET FEATURES 60V/250mA RDS (ON)≦1.6Ω@VGS=10V RDS(ON)≦2Ω@VG S=4.5V RDS(ON)≦4.5Ω@VGS=2.5V Reliab le and Rugged Green Device Available ES D Protection RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-723 1 GATE 2 SOURCE 3 DR AIN MARKING 318 PACKAGE INFORMATIO.
Manufacture

SeCoS

Datasheet
Download SSN318NE-C Datasheet


SeCoS SSN318NE-C

SSN318NE-C; N Package MPQ SOT-723 8K Leader Siz e 7 inch ORDER INFORMATION Part Numbe r Type SSN318NE-C Lead (Pb)-free and Halogen-free REF. A B C D E Millimet er Min. Max. 1.150 1.250 0.750 0.850 - 0.500 1.150 1.250 0.800TYP. REF. F G H I Millimeter Min. Max. 0.170 0.270 0. 270 0.370 0 0.050 - 0.150 Top View MA XIMUM RATINGS (TA=25°C unless otherwis e specified) Parame.


SeCoS SSN318NE-C

ter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Dr ain Current @VGS=10V 1 Pulsed Drain Cur rent 2 TA=25°C TA=85°C ID IDM Tota l Power Dissipation TA=25°C PD Oper ating Junction & Storage Temperature Ra nge TJ, TSTG Thermal Resistance Ratin gs Thermal Resistance Junction-ambient 1 RθJA Ratings 60 ±20 0.25 0.18 1 150 -55~150 833 Unit V.


SeCoS SSN318NE-C

V A A mW °C °C / W http://www.SeCoSG mbH.com/ 19-Mar-2020 Rev. C Any change s of specification will not be informed individually. Page 1 of 4 Elektronisc he Bauelemente SSN318NE-C 0.25A , 60V, RDS(ON) 1.6Ω N-Channel Enhancement M OSFET ELECTRICAL CHARACTERISTICS (TJ=2 5°C unless otherwise specified) Param eter Symbol Min. Typ. Max. Drain-So urce Breakdown Voltage .

Part

SSN318NE-C

Description

N-Channel MOSFET



Feature


Elektronische Bauelemente SSN318NE-C 0. 25A , 60V, RDS(ON) 1.6Ω N-Channel Enh ancement MOSFET FEATURES 60V/250mA RDS (ON)≦1.6Ω@VGS=10V RDS(ON)≦2Ω@VG S=4.5V RDS(ON)≦4.5Ω@VGS=2.5V Reliab le and Rugged Green Device Available ES D Protection RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-723 1 GATE 2 SOURCE 3 DR AIN MARKING 318 PACKAGE INFORMATIO.
Manufacture

SeCoS

Datasheet
Download SSN318NE-C Datasheet




 SSN318NE-C
Elektronische Bauelemente
SSN318NE-C
0.25A , 60V, RDS(ON) 1.6
N-Channel Enhancement MOSFET
FEATURES
60V/250mA
RDS(ON)1.6@VGS=10V
RDS(ON)2@VGS=4.5V
RDS(ON)4.5@VGS=2.5V
Reliable and Rugged
Green Device Available
ESD Protection
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-723
1 GATE
2 SOURCE
3 DRAIN
MARKING
318
PACKAGE INFORMATION
Package
MPQ
SOT-723
8K
Leader Size
7 inch
ORDER INFORMATION
Part Number
Type
SSN318NE-C
Lead (Pb)-free and Halogen-free
REF.
A
B
C
D
E
Millimeter
Min. Max.
1.150 1.250
0.750 0.850
- 0.500
1.150 1.250
0.800TYP.
REF.
F
G
H
I
Millimeter
Min. Max.
0.170 0.270
0.270 0.370
0 0.050
- 0.150
Top View
MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current @VGS=10V 1
Pulsed Drain Current 2
TA=25°C
TA=85°C
ID
IDM
Total Power Dissipation
TA=25°C
PD
Operating Junction & Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Thermal Resistance Junction-ambient 1
RθJA
Ratings
60
±20
0.25
0.18
1
150
-55~150
833
Unit
V
V
A
A
mW
°C
°C / W
http://www.SeCoSGmbH.com/
19-Mar-2020 Rev. C
Any changes of specification will not be informed individually.
Page 1 of 4




 SSN318NE-C
Elektronische Bauelemente
SSN318NE-C
0.25A , 60V, RDS(ON) 1.6
N-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Drain-Source Breakdown Voltage
BVDSS
60
-
-
Gate Threshold Voltage
VGS(th)
0.5
-
1.5
Gate-Body Leakage Current
IGSS
-
- ±10
Zero Gate Voltage Drain Current
IDSS
-
-
-1
- 10
- - 1.6
Drain-Source On-Resistance 3
RDS(ON)
-
-
2
- - 4.5
Total Gate Charge
Qg - 0.76 -
Gate-Source Charge
Qgs - 0.085 -
Gate-Drain (“Miller”) Change
Qgd - 0.26 -
Turn-On Delay Time
Td(on)
-
4
-
Rise Time
Tr - 7 -
Turn-Off Delay Time
Td(off)
-
15
-
Fall Time
Tf - 15 -
Input Capacitance
Ciss - 43 -
Output Capacitance
Coss
-
7.2
-
Reverse Transfer Capacitance
Crss
-
4
-
Source-Drain Diode
Diode Forward Voltage 3
VSD -
- 1.2
Notes:
1. Surface mounted on FR4 Board using the minimum recommended pad size
2. Pulse width limited by maximum junction temperature., Pw 300µs, Duty cycle 2%
3. The data tested by pulsed , pulse width 300us , duty cycle 2%
Unit
V
V
µA
µA
Test Conditions
VGS=0, ID=250µA
VDS=10V, ID=1mA
VDS=0, VGS=±20V
VDS=48V, VGS=0,TJ=25°C
VDS=48V, VGS=0,TJ=70°C
VGS=10V, ID=220mA
VGS=4.5V, ID=220mA
VGS=2.5V, ID=120mA
IDS=250mA,
nC VDS=30V,
VGS=4.5V
VDD=30V,
nS IDS=100mA,
VGS=4.5V,
RGEN=10
VGS=0V,
pF VDS=10V,
f=1MHz
V IS=200mA, VGS=0V
http://www.SeCoSGmbH.com/
19-Mar-2020 Rev. C
Any changes of specification will not be informed individually.
Page 2 of 4




 SSN318NE-C
Elektronische Bauelemente
TYPICAL CHARACTERISTICS
SSN318NE-C
0.25A , 60V, RDS(ON) 1.6
N-Channel Enhancement MOSFET
http://www.SeCoSGmbH.com/
19-Mar-2020 Rev. C
Any changes of specification will not be informed individually.
Page 3 of 4



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