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N-Channel MOSFET. SSD42N04-C Datasheet

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N-Channel MOSFET. SSD42N04-C Datasheet
















SSD42N04-C MOSFET. Datasheet pdf. Equivalent













Part

SSD42N04-C

Description

N-Channel MOSFET



Feature


Elektronische Bauelemente SSD42 04-C 42 A, 40V, RDS(O ) 12mΩ -Ch Enhancement Mode Power MOSFET RoHS Compliant Produ ct A suffix of “-C” specifies halog en free DESCRIPTION SSD42N04-C is the h ighest performance trench N-ch MOSFETs with extreme high cell density, which p rovides excellent RDS(ON) and gate char ge for most of the synchronous buck con verter applications. SSD.
Manufacture

SeCoS

Datasheet
Download SSD42N04-C Datasheet


SeCoS SSD42N04-C

SSD42N04-C; 42N04-C meets the RoHS and Green Product requirement with full function reliabi lity approved. FEATURES Advanced high cell density Trench technology Super Lo w Gate Charge Green Device Available M ARKING 42N04 Date Code PACKAGE INFORM ATION Package MPQ TO-252 2.5K Lead er Size 13 inch ORDER INFORMATION Part Number Type SSD42N04-C Lead (Pb)-fr ee and Halogen-fre.


SeCoS SSD42N04-C

e ABSOLUTE MAXIMUM RATINGS Parameter Dr ain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 @VGS=10V Pul sed Drain Current 2 Total Power Dissipa tion 3 Operating Junction & Storage Tem perature Thermal Resistance Junction-Am bient 1 Thermal Resistance Junction-Cas e 1 Symbol VDS VGS TC=25°C TC=100° C TC=25°C TA=25°C ID IDM PD TJ, TST G Thermal Resistance R.


SeCoS SSD42N04-C

atings RθJA RθJC TO-252(D-Pack) A BC D GE K HF MJ N O P REF. A B C D E F G H Millimeter Min. Max. 6.30 6.90 4.95 5.53 2.10 2.50 0.40 0.90 6.00 7.7 0 2.90 REF 5.40 6.40 0.60 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 RE F. 0.89 REF. 0.45 1.14 1.55 Typ. 0 0.15 0.58 REF. 2 Drain 1 Gate Ratings 40 ±20 42 26 100 34.7 2 -55~150 3 Sourc e Unit V V A A W °C .





Part

SSD42N04-C

Description

N-Channel MOSFET



Feature


Elektronische Bauelemente SSD42 04-C 42 A, 40V, RDS(O ) 12mΩ -Ch Enhancement Mode Power MOSFET RoHS Compliant Produ ct A suffix of “-C” specifies halog en free DESCRIPTION SSD42N04-C is the h ighest performance trench N-ch MOSFETs with extreme high cell density, which p rovides excellent RDS(ON) and gate char ge for most of the synchronous buck con verter applications. SSD.
Manufacture

SeCoS

Datasheet
Download SSD42N04-C Datasheet




 SSD42N04-C
Elektronische Bauelemente
SSD42 04-C
42A, 40V, RDS(O ) 12m
-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
SSD42N04-C is the highest performance trench
N-ch MOSFETs with extreme high cell density, which
provides excellent RDS(ON) and gate charge for most of the
synchronous buck converter applications.
SSD42N04-C meets the RoHS and Green Product
requirement with full function reliability approved.
FEATURES
Advanced high cell density Trench technology
Super Low Gate Charge
Green Device Available
MARKING
42N04
Date Code
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size
13 inch
ORDER INFORMATION
Part Number
Type
SSD42N04-C
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1 @VGS=10V
Pulsed Drain Current 2
Total Power Dissipation 3
Operating Junction & Storage Temperature
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case 1
Symbol
VDS
VGS
TC=25°C
TC=100°C
TC=25°C
TA=25°C
ID
IDM
PD
TJ, TSTG
Thermal Resistance Ratings
RθJA
RθJC
TO-252(D-Pack)
A
BC
D
GE
K HF
MJ
N
O
P
REF.
A
B
C
D
E
F
G
H
Millimeter
Min. Max.
6.30 6.90
4.95 5.53
2.10 2.50
0.40 0.90
6.00 7.70
2.90 REF
5.40 6.40
0.60 1.20
REF.
J
K
M
N
O
P
Millimeter
Min. Max.
2.30 REF.
0.89 REF.
0.45 1.14
1.55 Typ.
0 0.15
0.58 REF.
2
Drain
1
Gate
Ratings
40
±20
42
26
100
34.7
2
-55~150
3
Source
Unit
V
V
A
A
W
°C
Steady State, 62
3.6
°C/W
http://www.SeCoSGmbH.com/
10-Feb-2020 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4




 SSD42N04-C
Elektronische Bauelemente
SSD42 04-C
42A, 40V, RDS(O ) 12m
-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max.
Drain-Source Breakdown Voltage
V(BR)DSS
40
-
-
Gate-Threshold Voltage
Gate-Source Leakage Current
VGS(th)
IGSS
1
-
- 2.5
- ±100
TJ=25°C
- -1
Drain-Source Leakage Current
IDSS
TJ=55°C
- -5
Static Drain-Source On-Resistance 2
RDS(ON)
-
-
9.5 12
13.5 17
Forward Transconductance
Gate Resistance
gfs - 36 -
Rg - 2.1 -
Total Gate Charge
Gate-Source Charge
Gate-Drain Change
Qg - 10.7 -
Qgs - 3.3 -
Qgd - 4.2 -
Turn-on Delay Time
Rise Time
Td(on) - 8.6 -
Tr - 3.4 -
Turn-off Delay Time
Fall Time
Td(off)
-
25
-
Tf - 2.2 -
Input Capacitance
Ciss - 1314 -
Output Capacitance
Coss - 120 -
Reverse Transfer Capacitance
Crss - 88
Source-Drain Diode
Diode Forward Voltage 2
Continuous Source Current 1
VSD -
IS -
-
-
Pulsed Source Current 2
ISM -
-
Notes:
1.
2.
3.
The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
The data tested by pulsed, pulse width≤300us, duty cycle≤2%.
Pulse width limited by maximum junction temperature.
-
1.2
42
100
Unit
V
V
nA
uA
mΩ
S
nC
Test Conditions
VGS=0V, ID=250µA
VDS=VGS, ID=250µA
VGS=±20V, VDS=0V
VDS=32V, VGS=0
VDS=32V, VGS=0
VGS=10V, ID=20A
VGS=4.5V, ID=10A
VDS=5V, ID=20A
VDS=VGS=0V, f=1MHz
ID=12A
VDS=20V
VGS=4.5V
VDD=12V
nS ID=6A
VGS=10V
RG=3.3Ω
VGS=0V
pF VDS=15V
f=1MHz
V IS=1A, VGS=0V, TJ=25°C
A
VG=VD=0V, Force Current
A
http://www.SeCoSGmbH.com/
10-Feb-2020 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4




 SSD42N04-C
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSD42 04-C
42A, 40V, RDS(O ) 12m
-Ch Enhancement Mode Power MOSFET
http://www.SeCoSGmbH.com/
10-Feb-2020 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 4




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