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P-Channel MOSFET. SMG2305PE-C Datasheet

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P-Channel MOSFET. SMG2305PE-C Datasheet
















SMG2305PE-C MOSFET. Datasheet pdf. Equivalent













Part

SMG2305PE-C

Description

P-Channel MOSFET



Feature


Elektronische Bauelemente SMG2305PE-C - 4.5 A, -20 V, RDS(ON) 43 mΩ P-Channel Enhancement MOSFET RoHS Compliant Pro duct A suffix of “-C” specifies hal ogen & lead-free DESCRIPTION These min iature surface mount MOSFETs utilize a high cell density trench process to pro vide low RDS(on) and to ensure minimal power loss and heat dissipation. Typica l applications are DC-DC.
Manufacture

SeCoS

Datasheet
Download SMG2305PE-C Datasheet


SeCoS SMG2305PE-C

SMG2305PE-C; converters and power management in port able and battery-powered products such as computers, printers, PCMCIA cards, c ellular and cordless telephones. FEATU RES Low RDS(on) Provides Higher Efficie ncy and Extends Battery Life. Low Therm al Impedance Copper Leadframe SC-59 Sav es Board Space. Fast Switching Speed. H igh Performance Trench Technology. PAC KAGE INFORMATION .


SeCoS SMG2305PE-C

Package MPQ SC-59 3K LeaderSize 7’ inch ORDER INFORMATION Part Number Type SMG2305PE-C Lead (Pb)-free and H alogen-free SC-59 A L 3 Top View CB 12 KE 3 1 2 D F GH J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.3 5 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.4 5 0.55 0.85 1.15 ES.


SeCoS SMG2305PE-C

D Protection MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate -Source Voltage VGS Continuous Drain Current 1 Pulsed Drain Current 2 TA=25 °C TA=70°C ID IDM Power Dissipation 1 TA=25°C TA=70°C PD Operating Ju nction and Storage Temperature Range T J, TSTG Thermal Resistance Data Maxim um Junction to Ambient .





Part

SMG2305PE-C

Description

P-Channel MOSFET



Feature


Elektronische Bauelemente SMG2305PE-C - 4.5 A, -20 V, RDS(ON) 43 mΩ P-Channel Enhancement MOSFET RoHS Compliant Pro duct A suffix of “-C” specifies hal ogen & lead-free DESCRIPTION These min iature surface mount MOSFETs utilize a high cell density trench process to pro vide low RDS(on) and to ensure minimal power loss and heat dissipation. Typica l applications are DC-DC.
Manufacture

SeCoS

Datasheet
Download SMG2305PE-C Datasheet




 SMG2305PE-C
Elektronische Bauelemente
SMG2305PE-C
-4.5 A, -20 V, RDS(ON) 43 m
P-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low RDS(on) and to
ensure minimal power loss and heat dissipation. Typical
applications are DC-DC converters and power management
in portable and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
FEATURES
Low RDS(on) Provides Higher Efficiency and Extends
Battery Life.
Low Thermal Impedance Copper Leadframe SC-59
Saves Board Space.
Fast Switching Speed.
High Performance Trench Technology.
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
LeaderSize
7’ inch
ORDER INFORMATION
Part Number
Type
SMG2305PE-C
Lead (Pb)-free and Halogen-free
SC-59
A
L
3
Top View
CB
12
KE
3
1
2
D
F GH J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.25 3.00
1.30 1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15
ESD
Protection
MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current 1
Pulsed Drain Current 2
TA=25°C
TA=70°C
ID
IDM
Power Dissipation 1
TA=25°C
TA=70°C
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Data
Maximum Junction to Ambient 1
t5 sec
Steady-State
RθJA
Rating
-20
±8
-4.5
-3.6
-20
1.25
0.8
-55 ~ 150
100
150
Unit
V
V
A
A
W
°C
°C/W
http://www.SeCoSGmbH.com/
16-Mar-2020 Rev. F
Any changes of specification will not be informed individually.
Page 1 of 4




 SMG2305PE-C
Elektronische Bauelemente
SMG2305PE-C
-4.5 A, -20 V, RDS(ON) 43 m
P-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min Typ Max
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
-20
-
- V VGS=0, ID= -250µA
Gate-Threshold Voltage
VGS(th)
-0.4
-
-0.9 V VDS = VGS, ID = -250µA
Gate-Body Leakage
IGSS
-
- ±10 uA VDS = 0V, VGS= ±8V
TJ=25°C
-
Zero Gate Voltage Drain Current
IDSS
TJ=55°C
-
- -1
VDS = -16V, VGS= 0V
µA
- -10
V DS = -16V, VGS= 0V, TJ=55°C
Drain-Source On-Resistance 3
RDS(ON)
-
-
- 43
VGS= -4.5V, ID = -3.6A
- 60 mVGS= -2.5V, ID = -3.1A
- - 120
VGS= -1.8V, ID = -2.7A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg - 12.0 -
ID= -2.4A
Qgs - 2.0 - nC VDS= -5V
Qgd - 2.0 -
VGS= -4.5V
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
- 9.5 -
- 17 -
- 94 -
- 135 -
VDD= -10V
nS
VGEN= -4V
RG=3
RL=2.5
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss - 880 -
VGS=0,
Coss - 131 - pF VDS= -10V,
Crss - 116 -
f=1MHz
Source-Drain Diode
Diode Forward Voltage
VSD - -0.60 -
Notes:
1.
2.
3.
Surface Mounted on 1inch2 FR4 Board.
Pulse width limited by maximum junction temperature, pulse width300µs, duty cycle2%.
The data tested by pulsed, pulse width300µs, duty cycle2%.
V
IS= -0.46A, VGS= 0V
http://www.SeCoSGmbH.com/
16-Mar-2020 Rev. F
Any changes of specification will not be informed individually.
Page 2 of 4




 SMG2305PE-C
Elektronische Bauelemente
CHARACTERISTIC CURVE
SMG2305PE-C
-4.5 A, -20 V, RDS(ON) 43 m
P-Channel Enhancement MOSFET
http://www.SeCoSGmbH.com/
16-Mar-2020 Rev. F
Any changes of specification will not be informed individually.
Page 3 of 4




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