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N-Channel MOSFET. SSD75N06-C Datasheet

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N-Channel MOSFET. SSD75N06-C Datasheet
















SSD75N06-C MOSFET. Datasheet pdf. Equivalent













Part

SSD75N06-C

Description

N-Channel MOSFET



Feature


Elektronische Bauelemente SSD75 06-C 75 A, 60V, RDS(O ) 8.5mΩ -Channel Enhanc ement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The S SD75N06-C is the highest performance tr ench N-ch MOSFETs with extreme high cel l density, which provide excellent RDS( on) and gate charge for most of the syn chronous buck converter .
Manufacture

SeCoS

Datasheet
Download SSD75N06-C Datasheet


SeCoS SSD75N06-C

SSD75N06-C; applications. The SSD75N06-C meet the Ro HS and Green Product requirement with f ull function reliability approved. FEA TURES Lower Gate Charge Advanced high c ell density Trench technology Green Dev ice Available MARKING 75N06 = Date co de PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDE R INFORMATION Part Number Type SSD75 N06-C Lead (Pb)-f.


SeCoS SSD75N06-C

ree and Halogen-free TO-252(D-Pack) A BC D GE K HF MJ N O P REF. A B C D E F G H Millimeter Min. Max. 6.30 6.90 4.95 5.53 2.10 2.50 0.40 0.90 6.00 7.7 0 2.90 REF. 5.40 6.40 0.60 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 R EF. 0.89 REF. 0.45 1.14 1.55 TYP. 0 0.1 5 0.58 REF. 2 Drain 1 Gate ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherw ise specified) Par.


SeCoS SSD75N06-C

ameter Symbol Drain-Source Voltage VD S Gate-Source Voltage VGS Continuous Drain Current 1@VGS=10V Pulsed Drain C urrent 2 TC=25°C TC=100°C ID IDM P ower Dissipation TC=25°C PD Operati ng Junction & Storage Temperature Therm al Resistance Junction-Ambient 1 Therma l Resistance Junction-Case 1 TJ, TSTG Thermal Resistance Ratings RθJA RθJC Ratings 60 ±20 75 47 2.





Part

SSD75N06-C

Description

N-Channel MOSFET



Feature


Elektronische Bauelemente SSD75 06-C 75 A, 60V, RDS(O ) 8.5mΩ -Channel Enhanc ement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The S SD75N06-C is the highest performance tr ench N-ch MOSFETs with extreme high cel l density, which provide excellent RDS( on) and gate charge for most of the syn chronous buck converter .
Manufacture

SeCoS

Datasheet
Download SSD75N06-C Datasheet




 SSD75N06-C
Elektronische Bauelemente
SSD75 06-C
75A, 60V, RDS(O ) 8.5mΩ
-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSD75N06-C is the highest performance trench
N-ch MOSFETs with extreme high cell density, which
provide excellent RDS(on) and gate charge for most of the
synchronous buck converter applications.
The SSD75N06-C meet the RoHS and Green Product
requirement with full function reliability approved.
FEATURES
Lower Gate Charge
Advanced high cell density Trench technology
Green Device Available
MARKING
75N06
= Date code
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size
13 inch
ORDER INFORMATION
Part Number
Type
SSD75N06-C
Lead (Pb)-free and Halogen-free
TO-252(D-Pack)
A
BC
D
GE
K HF
MJ
N
O
P
REF.
A
B
C
D
E
F
G
H
Millimeter
Min. Max.
6.30 6.90
4.95 5.53
2.10 2.50
0.40 0.90
6.00 7.70
2.90 REF.
5.40 6.40
0.60 1.20
REF.
J
K
M
N
O
P
Millimeter
Min. Max.
2.30 REF.
0.89 REF.
0.45 1.14
1.55 TYP.
0 0.15
0.58 REF.
2
Drain
1
Gate
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current 1@VGS=10V
Pulsed Drain Current 2
TC=25°C
TC=100°C
ID
IDM
Power Dissipation
TC=25°C
PD
Operating Junction & Storage Temperature
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case 1
TJ, TSTG
Thermal Resistance Ratings
RθJA
RθJC
Ratings
60
±20
75
47
200
62.5
-55~150
62
2
3
Source
Unit
V
V
A
A
W
°C
°C/W
http://www.SeCoSGmbH.com/
18-Mar-2020 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4




 SSD75N06-C
Elektronische Bauelemente
SSD75 06-C
75A, 60V, RDS(O ) 8.5mΩ
-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
60 -
-
V
Gate-Threshold Voltage
Gate-Source Leakage Current
VGS(th)
IGSS
1.2 - 2.5
V
- - ±100 nA
Drain-Source Leakage Current
- -1
IDSS
uA
- -5
Static Drain-Source On-Resistance 3
RDS(ON)
- 6.5 8.5
mΩ
- 8.8 12
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Change
Turn-on Delay Time 2
Rg
Qg
Qgs
Qgd
Td(on)
- 1.2 -
- 28 -
- 8.6 -
- 13.5 -
- 16.4 -
nC
Rise Time
Turn-off Delay Time
Tr
Td(off)
- 39.8 -
- 53.9 -
nS
Fall Time
Input Capacitance
Output Capacitance
Tf - 15.2 -
Ciss - 3307 -
Coss
- 201 -
pF
Reverse Transfer Capacitance
Diode Forward Voltage 3
Continuous Source Current 1
Crss - 151
Source-Drain Diode
VSD - -
IS - -
-
1.2
75
V
A
Reverse Recovery Time
Trr
- 19 -
nS
Reverse Recovery Charge
Qrr - 66 -
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The Pulse width limited by maximum junction temperature, Pulse Width ≤300µs, Duty Cycle≤2%
3. The Pulse Test: Pulse Width ≤300µs, Duty Cycle≤2%
nC
Test Conditions
VGS=0, ID=250µA
VDS=VGS, ID=250µA
VGS= ±20V
VDS=48V, VGS=0, TJ=25°C
VDS=48V, VGS=0, TJ=55°C
VGS=10V, ID=10A
VGS=4.5V, ID=5A
VDS=VGS=0, f =1.0MHz
ID=10A
VDS=30V
VGS=4.5V
VDD=30V
ID=10A
VGS=10V
RG=3.3Ω
VGS =0
VDS=30V
f =1.0MHz
IS=1A, VGS=0
VG=VD=0, Force Current
IF=10A, dl/dt=100A/µs
TJ=25°C
http://www.SeCoSGmbH.com/
18-Mar-2020 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4




 SSD75N06-C
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSD75 06-C
75A, 60V, RDS(O ) 8.5mΩ
-Channel Enhancement Mode Power MOSFET
http://www.SeCoSGmbH.com/
18-Mar-2020 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 4




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