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N-Channel MOSFET. SSI318-C Datasheet

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N-Channel MOSFET. SSI318-C Datasheet
















SSI318-C MOSFET. Datasheet pdf. Equivalent













Part

SSI318-C

Description

Dual N-Channel MOSFET



Feature


Elektronische Bauelemente SSI318-C 0.25 A, 50V, RDS(ON) 1.6Ω Dual N-Channel E NHANCEMENT MODE POWER MOSFET RoHS Comp liant Product A Suffix of “-C” spec ifies halogen & lead-free DESCRIPTIONS The SSI318-C is the highest performanc e trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck conver.
Manufacture

SeCoS

Datasheet
Download SSI318-C Datasheet


SeCoS SSI318-C

SSI318-C; ter applications. The SSI318-C meet the RoHS and Green Product requirement with full function reliability approved. S OT-563 A B FEATURES Reliable and Rugge d Green Device Available ESD Protection MARKING 318 PACKAGE INFORMATION Pack age MPQ SOT-563 3K Leader Size 7 in ch J D CF GH E REF. A B C D E Milli meter Min. Max. 1.50 1.70 1.50 1.70 0.5 25 0.60 1.10 1.30 .


SeCoS SSI318-C

- 0.05 REF. F G H J Millimeter Min. Ma x. 0.09 0.16 0.45 0.55 0.17 0.27 0.10 0 .30 ORDER INFORMATION Part Number Typ e SSI318-C Lead (Pb)-free and Halogen -free ABSOLUTE MAXIMUM RATINGS Paramet er Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Dr ain Current 1, @VGS=4.5V Pulsed Drain C urrent 2 TA=25°C TA=85°C ID IDM Po wer Dissipation TA=.


SeCoS SSI318-C

25°C PD Operating Junction & Storage Temperature Range TJ, TSTG Thermal Re sistance Ratings Thermal Resistance Ju nction-Ambient 1 RθJA Ratings 50 ±2 0 0.25 0.18 1 150 -55~150 833 Unit V V A A mW °C °C/W http://www.SeCoSGmbH .com/ 01-Apr-2020 Rev. B Any changes o f specification will not be informed in dividually. Page 1 of 4 Elektronische Bauelemente SSI318-C 0.





Part

SSI318-C

Description

Dual N-Channel MOSFET



Feature


Elektronische Bauelemente SSI318-C 0.25 A, 50V, RDS(ON) 1.6Ω Dual N-Channel E NHANCEMENT MODE POWER MOSFET RoHS Comp liant Product A Suffix of “-C” spec ifies halogen & lead-free DESCRIPTIONS The SSI318-C is the highest performanc e trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck conver.
Manufacture

SeCoS

Datasheet
Download SSI318-C Datasheet




 SSI318-C
Elektronische Bauelemente
SSI318-C
0.25A, 50V, RDS(ON) 1.6
Dual N-Channel ENHANCEMENT MODE POWER MOSFET
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
DESCRIPTIONS
The SSI318-C is the highest performance trench
N-Ch MOSFETs with extreme high cell density,
which provide excellent RDS(ON) and gate charge for
most of the synchronous buck converter applications.
The SSI318-C meet the RoHS and Green Product
requirement with full function reliability approved.
SOT-563
A
B
FEATURES
Reliable and Rugged
Green Device Available
ESD Protection
MARKING
318
PACKAGE INFORMATION
Package
MPQ
SOT-563
3K
Leader Size
7 inch
J
D
CF
GH
E
REF.
A
B
C
D
E
Millimeter
Min. Max.
1.50 1.70
1.50 1.70
0.525 0.60
1.10 1.30
- 0.05
REF.
F
G
H
J
Millimeter
Min. Max.
0.09 0.16
0.45 0.55
0.17 0.27
0.10 0.30
ORDER INFORMATION
Part Number
Type
SSI318-C
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current 1, @VGS=4.5V
Pulsed Drain Current 2
TA=25°C
TA=85°C
ID
IDM
Power Dissipation
TA=25°C
PD
Operating Junction & Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Thermal Resistance Junction-Ambient 1
RθJA
Ratings
50
±20
0.25
0.18
1
150
-55~150
833
Unit
V
V
A
A
mW
°C
°C/W
http://www.SeCoSGmbH.com/
01-Apr-2020 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 4




 SSI318-C
Elektronische Bauelemente
SSI318-C
0.25A, 50V, RDS(ON) 1.6
Dual N-Channel ENHANCEMENT MODE POWER MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max.
Drain-Source Breakdown Voltage
BVDSS
50
-
-
Gate Threshold Voltage
VGS(th)
0.5
-
1.5
Gate-Source Leakage Current
IGSS
-
- ±10
TJ=25°C
-
Drain-Source Leakage Current
IDSS
TJ=70°C
-
-1
- 10
- - 1.6
Static Drain-Source On-Resistance 3
RDS(ON)
-
-
2
- - 4.5
Total Gate Charge
Qg - 0.76 -
Gate-Source Charge
Qgs - 0.085 -
Gate-Drain (“Miller”) Charge
Qgd - 0.26 -
Turn-on Delay Time
Td(on)
-
4
-
Rise Time
Tr - 7 -
Turn-off Delay Time
Td(off)
-
15
-
Fall Time
Tf - 15 -
Input Capacitance
Ciss - 43 -
Output Capacitance
Coss
-
7.2
-
Reverse Transfer Capacitance
Crss
-
4
Source-Drain Diode
-
Continuous Source Current 1
IS -
- 0.25
Pulsed Source Current 2
ISM - - 1
Diode Forward Voltage 3
VSD -
- 1.2
Notes:
1.
2.
3.
Surface mounted on FR4 board.
Pulse width limited by maximum junction temperature, Pw300µs, Duty cycle1%.
The data tested by pulsed, pulse width300µs, duty cycle2%.
Unit
Test Conditions
V VGS=0, ID=250µA
V VDS=VGS, ID=1mA
µA VGS= ±20V
VDS=50V, VGS=0
µA
V DS=40V, VGS=0
VGS=10V, ID=220mA
VGS=4.5V, ID=220mA
VGS=2.5V, ID=120mA
IDS=0.25A
nC VDS=30V
VGS=4.5V
VDD=30V
nS IDS=0.1A
VGS=4.5V
RGEN=10
VGS=0
pF VDS=10V
f=1MHz
A
A
V IS=200mA, VGS=0
http://www.SeCoSGmbH.com/
01-Apr-2020 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4




 SSI318-C
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSI318-C
0.25A, 50V, RDS(ON) 1.6
Dual N-Channel ENHANCEMENT MODE POWER MOSFET
http://www.SeCoSGmbH.com/
01-Apr-2020 Rev. B
Any changes of specification will not be informed individually.
Page 3 of 4




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