DatasheetsPDF.com

N-Channel MOSFET. SPR42N10-C Datasheet

DatasheetsPDF.com

N-Channel MOSFET. SPR42N10-C Datasheet






SPR42N10-C MOSFET. Datasheet pdf. Equivalent




SPR42N10-C MOSFET. Datasheet pdf. Equivalent





Part

SPR42N10-C

Description

N-Channel MOSFET



Feature


Elektronische Bauelemente SPR42 10-C 42 A, 100V, RDS(O ) 24mΩ -Channel Enhanc ement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SP R42N10-C is the highest performance tre nch N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(O N) for most of the synchronous buck con verter applications. The.
Manufacture

SeCoS

Datasheet
Download SPR42N10-C Datasheet


SeCoS SPR42N10-C

SPR42N10-C; SPR42N10-C meet the RoHS and Green Prod uct requirement with full function reli ability approved. FEATURES Advanced Hig h Cell Density Technology Super Low Gat e Charge MARKING PR-8PP 42N10 = Date code PACKAGE INFORMATION Package MP Q PR-8PP 3K Leader Size 13 inch ORD ER INFORMATION Part Number Type SPR42 N10-C Lead (Pb)-free and Halogen-free REF. A B C D E F .


SeCoS SPR42N10-C

Millimeter Min. Max. 4.9 5.1 5.7 5.9 5. 95 6.2 1.27 BSC. 0.35 0.49 0.1 0.2 REF . G H I J K L Millimeter Min. Max. 0.8 1.0 0.254 Ref. 4.0 Ref. 3.4 Ref. 0.6 R ef. 1.4 Ref. SD SD SD GD ABSOLUTE MAX IMUM RATINGS Parameter Symbol Drain-S ource Voltage VDS Gate-Source Voltage VGS Continuous Drain Current 1, @VGS =10V Pulsed Drain Current 3 TC=25°C T C=100°C ID IDM To.


SeCoS SPR42N10-C

tal Power Dissipation TC=25°C TA=25°C PD Operating Junction & Storage Temp erature Thermal Resistance Junction-Amb ient 1 Thermal Resistance Junction-Ambi ent 2 Thermal Resistance Junction-Case 1 TJ, TSTG Thermal Resistance Ratings RθJA RθJC Ratings 100 ±20 42 27 110 62.5 2 -55~150 62.5 110 2 Unit V V A A W °C °C/W http://www.SeCoSGmbH.com / 20-Jan-2020 Rev. A Any.

Part

SPR42N10-C

Description

N-Channel MOSFET



Feature


Elektronische Bauelemente SPR42 10-C 42 A, 100V, RDS(O ) 24mΩ -Channel Enhanc ement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SP R42N10-C is the highest performance tre nch N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(O N) for most of the synchronous buck con verter applications. The.
Manufacture

SeCoS

Datasheet
Download SPR42N10-C Datasheet




 SPR42N10-C
Elektronische Bauelemente
SPR42 10-C
42A, 100V, RDS(O ) 24mΩ
-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SPR42N10-C is the highest performance
trench N-Ch MOSFETs with extreme high cell density,
which provide excellent RDS(ON) for most of the synchronous
buck converter applications.
The SPR42N10-C meet the RoHS and Green Product
requirement with full function reliability approved.
FEATURES
Advanced High Cell Density Technology
Super Low Gate Charge
MARKING
PR-8PP
42N10
= Date code
PACKAGE INFORMATION
Package
MPQ
PR-8PP
3K
Leader Size
13 inch
ORDER INFORMATION
Part Number
Type
SPR42N10-C
Lead (Pb)-free and Halogen-free
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.9 5.1
5.7 5.9
5.95 6.2
1.27 BSC.
0.35 0.49
0.1 0.2
REF.
G
H
I
J
K
L
Millimeter
Min. Max.
0.8 1.0
0.254 Ref.
4.0 Ref.
3.4 Ref.
0.6 Ref.
1.4 Ref.
SD
SD
SD
GD
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current 1, @VGS=10V
Pulsed Drain Current 3
TC=25°C
TC=100°C
ID
IDM
Total Power Dissipation
TC=25°C
TA=25°C
PD
Operating Junction & Storage Temperature
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Ambient 2
Thermal Resistance Junction-Case 1
TJ, TSTG
Thermal Resistance Ratings
RθJA
RθJC
Ratings
100
±20
42
27
110
62.5
2
-55~150
62.5
110
2
Unit
V
V
A
A
W
°C
°C/W
http://www.SeCoSGmbH.com/
20-Jan-2020 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4




 SPR42N10-C
Elektronische Bauelemente
SPR42 10-C
42A, 100V, RDS(O ) 24mΩ
-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Drain-Source Breakdown Voltage
BVDSS
100
-
-
Gate Threshold Voltage
Gate-Source Leakage Current
VGS(th)
IGSS
1.2
-
- 2.5
- ±100
Drain-Source Leakage TJ=25°C
- -1
Current
IDSS
TJ=55°C
- -5
Static Drain-Source On-Resistance 4 RDS(ON)
-
-
- 24
- 30
Total Gate Charge
Gate-Source Charge
Qg - 57 -
Qgs - 8.7 -
Gate-Drain (“Miller”) Change
Turn-on Delay Time
Rise Time
Qgd
Td(on)
Tr
-
-
-
14
16.2
41.2
-
-
-
Turn-off Delay Time
Fall Time
Td(off)
Tf
-
-
56.4
16.2
-
-
Input Capacitance
Output Capacitance
Ciss - 3307 -
Coss
-
201
-
Reverse Transfer Capacitance
Diode Forward Voltage 4
Continuous Source Current 1
Pulsed Source Current 3
Crss
-
151
Source-Drain Diode
VSD -
-
IS -
-
ISM -
-
-
1.2
42
110
Reverse Recovery Time
Trr - 44 -
Reverse Recovery Charge
Qrr - 25 -
Notes:
1. Surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. When Mounted On Min. Copper Pad.
3. Pulse width limited by maximum junction temperature, pulse width300µs, duty cycle2%.
4. The data tested by pulsed, pulse width300µs, duty cycle2%.
Unit
V
V
nA
µA
mΩ
Test Conditions
VGS=0, ID=250µA
VDS=VGS, ID=250µA
VGS= ±20V
VDS=80V, VGS=0
VDS=80V, VGS=0
VGS=10V, ID=20A
VGS=4.5V, ID=10A
ID=10A
nC VDS=30V
VGS=10V
VDD=30V
ns
ID=1A
VGS=10V
RG=3.3Ω
VGS=0V
pF VDS=25V
f=1.0MHz
V IS=1A, VGS=0
A
A
nS IS=10A,VGS=0,
nC dI/dt=100A/µs
http://www.SeCoSGmbH.com/
20-Jan-2020 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4




 SPR42N10-C
Elektronische Bauelemente
TYPICAL CHARACTERISTICS CURVES
SPR42 10-C
42A, 100V, RDS(O ) 24mΩ
-Channel Enhancement Mode Power MOSFET
http://www.SeCoSGmbH.com/
20-Jan-2020 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 4



Recommended third-party SPR42N10-C Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)