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NTE45 Dataheets PDF



Part Number NTE45
Manufacturers NTE
Logo NTE
Description PNP Transistor
Datasheet NTE45 DatasheetNTE45 Datasheet (PDF)

NTE44 (NPN) & NTE45 (PNP) Silicon Complementary Transistors Dual, Bias Amp, High Gain, Low Noise, Common Base Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter-Base Voltage, VEBO . . . . . ..

  NTE45   NTE45


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NTE44 (NPN) & NTE45 (PNP) Silicon Complementary Transistors Dual, Bias Amp, High Gain, Low Noise, Common Base Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Collector Power Dissipation (Per Unit), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Total Power Dissipation, PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55° to +125°C Note 1. NTE44 is a discontinued device and no longer available. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Collector-Emitter Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Curent DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Differetial Collector Current Ratio Transistion Frequency Collector Output Capacitance Noise Figure V(BR)CEO ICBO ICEO IEBO hFE VCE(sat) VBE1-VBE2 IC2/IC1 fT Cob NF IC = 100μA, RBE =∞ VCB = 100V, IE = 0 VCE = 100V, RBE =∞ VEB = 5V, IC = 0 VCE = 6V, IC = 1mA IC = 10mA, IB = 1mA VCE = 6V, IC = 1mA VCE = 6V, IC1 = 1mA VCE = 6V, IE = 1mA VCB = 6V, IE = 0, f = 1MHz VCE = 6V, IE = 0.3, f = 100Hz, RG = 1kΩ Min Typ Max Unit 100 - - V - - 0.1 μA - - 10 μA - - 0.1 μA 400 - 800 - - 0.3 V - 1 10 mV 0.8 0 1.25 - 100 - MHz - 3 - pF - 0.6 - dB .320 (8.13) Max B CECB .220 (5.59) Max .414 (10.52) Max 15 .050 (1.27) .142 (3.6) Max .


NTE44 NTE45 2SC5876U3


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