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PNP Transistor. DTA123TUA Datasheet

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PNP Transistor. DTA123TUA Datasheet






DTA123TUA Transistor. Datasheet pdf. Equivalent




DTA123TUA Transistor. Datasheet pdf. Equivalent





Part

DTA123TUA

Description

PNP Transistor



Feature


DTA123T series PNP -100mA -50V Digital T ransistor (Bias Resistor Built-in Trans istor) Datasheet Parameter VCEO IC R Value -50V -100mA 2.2kΩ lFeatures 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of  an inverter circuit without conn ecting external  input resistors (see inner circuit) . 3) Only the on/off co nditions need to be set.
Manufacture

ROHM

Datasheet
Download DTA123TUA Datasheet


ROHM DTA123TUA

DTA123TUA;  for operation, making the circuit de sign easy. 4) Complementary NPN Types: DTC123TM series lOutline SOT-723 SOT- 323   DTA123TM (VMT3)   DTA123TUA (UMT3) lApplication INVERTER, INTERFA CE,DRIVER lInner circuit DTA123TM DTA 123TUA lPackaging specifications Part No. Package Package size                        Taping code Reel size Tape width (mm) (mm) Basi.


ROHM DTA123TUA

c ordering unit.(pcs) Marking DTA123TM SOT-723 (VMT3) 1212 T2L 180 8 80 00 92 DTA123TUA SOT-323 (UMT3) 2021 T106 180 8 3000 92                                                                                    www.rohm.com © 2018 ROHM Co ., Ltd. All rights reserved. 1/5 20180629 - Rev.001 DTA123T series   lAbsolute maximum ratings (Ta = 25°.


ROHM DTA123TUA

C) Parameter Collector-base voltage C ollector-emitter voltage Emitter-base voltage Collector current Power dissi pation DTA123TM DTA123TUA Junction te mperature Range of storage temperature                 Datas heet Symbol VCBO VCEO VEBO IC PD*1 Tj Tstg Values -50 -50 -5 -100 150 200 15 0 -55 to +150 Unit V V V mA mW ℃ ℃ lElectrical characteristics (Ta = 25.

Part

DTA123TUA

Description

PNP Transistor



Feature


DTA123T series PNP -100mA -50V Digital T ransistor (Bias Resistor Built-in Trans istor) Datasheet Parameter VCEO IC R Value -50V -100mA 2.2kΩ lFeatures 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of  an inverter circuit without conn ecting external  input resistors (see inner circuit) . 3) Only the on/off co nditions need to be set.
Manufacture

ROHM

Datasheet
Download DTA123TUA Datasheet




 DTA123TUA
DTA123T series
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
Datasheet
Parameter
VCEO
IC
R
Value
-50V
-100mA
2.2kΩ
lFeatures
1) Built-In Biasing Resistor
2) Built-in bias resistors enable the configuration of
 an inverter circuit without connecting external
 input resistors (see inner circuit) .
3) Only the on/off conditions need to be set
 for operation, making the circuit design easy.
4) Complementary NPN Types: DTC123TM series
lOutline
SOT-723
SOT-323
 
DTA123TM
(VMT3)
 
DTA123TUA
(UMT3)
lApplication
INVERTER, INTERFACE,DRIVER
lInner circuit
DTA123TM
DTA123TUA
lPackaging specifications
Part No.
Package
Package
size
                      
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
Marking
DTA123TM
SOT-723
(VMT3)
1212
T2L
180
8
8000
92
DTA123TUA
SOT-323
(UMT3)
2021
T106
180
8
3000
92
                                                                                        
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
1/5
20180629 - Rev.001




 DTA123TUA
DTA123T series
 
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
DTA123TM
DTA123TUA
Junction temperature
Range of storage temperature
                Datasheet
Symbol
VCBO
VCEO
VEBO
IC
PD*1
Tj
Tstg
Values
-50
-50
-5
-100
150
200
150
-55 to +150
Unit
V
V
V
mA
mW
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Collector-base breakdown
voltage
BVCBO IC = -50μA
Collector-emitter breakdown
voltage
BVCEO IC = -1mA
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Input resistance
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
IE = -50μA
VCB = -50V
VEB = -4V
IC = -5mA, IB = -0.25mA
VCE = -5V, IC = -1mA
-
Transition frequency
f
*2
T
VCE = -10V, IE = 5mA,
f = 100MHz
*1 Each terminal mounted on a reference land.
*2 Characteristics of built-in transistor
Values
Unit
Min. Typ. Max.
-50 - - V
-50 - - V
-5 - - V
- - -500 nA
- - -500 nA
- - -300 mV
100 250 600 -
1.54 2.2 2.86 kΩ
- 250 - MHz
                                            
 
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
2/5
                                        
20180629 - Rev.001




 DTA123TUA
DTA123T series
 
lElectrical characteristic curves (Ta =25°C)
 
        
Datasheet
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics
Fig.3 DC Current gain vs. Collector Current
Fig.4 Collector-emitter saturation voltage vs.
Collector Current
                                                                                          
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
3/5
20180629 - Rev.001



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