RFN5TF8S

Super Fast Recovery Diode RFN5TF8S zSerise Standard Fast Recovery zApplications General rectification zFeatures 1)Low switching Loss 2)High current overload capacity zConstruction Silicon epitaxial planer type zDimensions(Unit : mm) RFN5 TF8S ձղ ᖺ᭶ ROHM : O220NFM ձ Manufacture Year ղ Manufacture Week Data Sheet zStructure zAbsolute Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average rectified foward current Forward current surge peak Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg zElectrical Characteristics(Tj=25°C) Parameter Forward voltage Reverse current Reverse recovery time Thermal resistance Symbol VF IR trr Rth(j-c) Conditions Duty0.5 Direct voltage 60Hz half sin wave , Resistive load Tc=106°C 60Hz half sin wave , Non-repetitive at Tj=25°C Conditions IF=5A VR=800V IF=0.5A,IR=1A,Irr=0.25×IR Junction to case Min. Limits 800 800 5 60 150 55 to 150 Typ. Max. 1.6 2.1 0.05 10 20 40 3.5 Unit V V A A °C °C Unit V μA ns °C/W WWWROHMCOM Ú2/(-#O,TD!LLRIGHTSRESERVED 1/4 2012.06 - Rev.A RFN5TF8S 　 Data Sheet FORWARD CURRENT:IF(A) FORWARD VOLTAGE:VF(mV) 100 10 Tj=150°C Tj=125°C Tj=75°C 1 Tj=25°C 0.1 0 500 1000 1500 2000 2500 3000 3500 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 1800 1750 1700 1650 1600 1550 1500 1450 1400 IF=5A Tj=25°C AVE:1593mV VF DISPERSION MAP 1000 f=1MHz 100 10 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERIS...