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Recovery Diode. RFN5TF8S Datasheet

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Recovery Diode. RFN5TF8S Datasheet






RFN5TF8S Diode. Datasheet pdf. Equivalent




RFN5TF8S Diode. Datasheet pdf. Equivalent





Part

RFN5TF8S

Description

Super Fast Recovery Diode



Feature


Super Fast Recovery Diode RFN5TF8S zSer ise Standard Fast Recovery zApplication s General rectification zFeatures 1)Low switching Loss 2)High current overload capacity zConstruction Silicon epitaxi al planer type zDimensions(Unit : mm) RFN5 TF8S ձղ ᖺ᭶ ROHM : O220NFM ձ Manufacture Year ղ Manufacture Week Data Sheet zStru cture zAbsolute Maximum R.
Manufacture

ROHM

Datasheet
Download RFN5TF8S Datasheet


ROHM RFN5TF8S

RFN5TF8S; atings(Tc=25°C) Parameter Repetitive p eak reverse voltage Reverse voltage Ave rage rectified foward current Forward c urrent surge peak Junction temperature Storage temperature Symbol VRM VR Io I FSM Tj Tstg zElectrical Characteristic s(Tj=25°C) Parameter Forward voltage R everse current Reverse recovery time Th ermal resistance Symbol VF IR trr Rth( j-c) Conditions Dut.


ROHM RFN5TF8S

y0.5 Direct voltage 60Hz half sin wave , Resistive load Tc=106°C 60Hz half sin wave , Non-repetitive at Tj=25°C Con ditions IF=5A VR=800V IF=0.5A,IR=1A,Irr =0.25×IR Junction to case Min. L imits 800 800 5 60 150 55 to 150 Typ. Max. 1.6 2.1 0.05 10 20 40 3.5 Unit V V A A °C °C Unit V μA ns °C/W WW WROHMCOM Ú2/(-#O ,TD!LL RIGHTSRESERVED 1/4 201.


ROHM RFN5TF8S

2.06 - Rev.A RFN5TF8S   Data Sheet F ORWARD CURRENT:IF(A) FORWARD VOLTAGE:V F(mV) 100 10 Tj=150°C Tj=125°C Tj=7 5°C 1 Tj=25°C 0.1 0 500 1000 1500 2 000 2500 3000 3500 FORWARD VOLTAGE:VF(m V) VF-IF CHARACTERISTICS 1800 1750 170 0 1650 1600 1550 1500 1450 1400 IF=5A Tj=25°C AVE:1593mV VF DISPERSION MAP 1000 f=1MHz 100 10 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(.

Part

RFN5TF8S

Description

Super Fast Recovery Diode



Feature


Super Fast Recovery Diode RFN5TF8S zSer ise Standard Fast Recovery zApplication s General rectification zFeatures 1)Low switching Loss 2)High current overload capacity zConstruction Silicon epitaxi al planer type zDimensions(Unit : mm) RFN5 TF8S ձղ ᖺ᭶ ROHM : O220NFM ձ Manufacture Year ղ Manufacture Week Data Sheet zStru cture zAbsolute Maximum R.
Manufacture

ROHM

Datasheet
Download RFN5TF8S Datasheet




 RFN5TF8S
Super Fast Recovery Diode
RFN5TF8S
zSerise
Standard Fast Recovery
zApplications
General rectification
zFeatures
1)Low switching Loss
2)High current overload capacity
zConstruction
Silicon epitaxial planer type
zDimensions(Unit : mm)
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ROHM : O220NFM
ձ Manufacture Year
ղ Manufacture Week
Data Sheet
zStructure
zAbsolute Maximum Ratings(Tc=25°C)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average rectified foward current
Forward current surge peak
Junction temperature
Storage temperature
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
zElectrical Characteristics(Tj=25°C)
Parameter
Forward voltage
Reverse current
Reverse recovery time
Thermal resistance
Symbol
VF
IR
trr
Rth(j-c)
Conditions
Duty0.5
Direct voltage
60Hz half sin wave , Resistive load Tc=106°C
60Hz half sin wave , Non-repetitive at Tj=25°C
Conditions
IF=5A
VR=800V
IF=0.5A,IR=1A,Irr=0.25×IR
Junction to case
Min.
Limits
800
800
5
60
150
55 to 150
Typ. Max.
1.6 2.1
0.05 10
20 40
3.5
Unit
V
V
A
A
°C
°C
Unit
V
μA
ns
°C/W
WWWROHMCOM
Ú2/(-#O ,TD!LLRIGHTSRESERVED
1/4
2012.06 - Rev.A




 RFN5TF8S
RFN5TF8S   Data Sheet
100
10
Tj=150°C
Tj=125°C
Tj=75°C
1
Tj=25°C
0.1
0
500 1000 1500 2000 2500 3000 3500
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
1800
1750
1700
1650
1600
1550
1500
1450
1400
IF=5A
Tj=25°C
AVE:1593mV
VF DISPERSION MAP
1000
f=1MHz
100
10
1
0 5 10 15 20 25 30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
100000
10000
1000
100
10
1
0
1000
100
Tj=150°C
Tj=125°C
Tj=75°C
Tj=25°C
200 400 600
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
800
VR=800V
Tj=25°C
AVE:75.0nA
10
IR DISPERSION MAP
180
175 f=1MHz
170 VR=0V
Tj=25°C
165
160
155 AVE:142pF
150
145
140
135
130
125
120
Ct DISPERSION MAP
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2/4
2012.06 - Rev.A




 RFN5TF8S
RFN5TF8S
160
140
120
100
80
60
40
20
0
1000
100
AVE:118A
IFSM 8.3ms
1cyc.
IIFSM DISPERSION MAP
IFSM 8.3ms 8.3ms
1cyc.
  Data Sheet
30
25
20
15
10
5
0
1000
100
IF=0.5A
IR=1.0A
Irr=0.25×IR
Tj=25°C
AVE:20.3ns
trr DISPERSION MAP
IFSM
time
10
1
5
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
4
AVE:3.06kV
3
2
AVE:1.08kV
1
C=200pF
0 R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
10
1
100
10
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
Rth(j-a)
Rth(j-c)
0.1
0.001
0.1 10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
3/4
2012.06 - Rev.A



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