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SSD70P03-C

SeCoS

P-Channel MOSFET

Elektronische Bauelemente SSD70P03-C -70A , -30V , RDS(O ) 7.5mΩ P-Channel Enhancement Mode Power MOSFET RoHS Complian...


SeCoS

SSD70P03-C

File DownloadDownload SSD70P03-C Datasheet


Description
Elektronische Bauelemente SSD70P03-C -70A , -30V , RDS(O ) 7.5mΩ P-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSD70P03-C is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSD70P03-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Lower Gate Charge Advanced high cell density Trench technology Green Device Available MARKING 70P03 = Date code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD70P03-C Lead (Pb)-free and Halogen-free TO-252 A BC D GE K HF MJ N O P REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 6.35 6.90 J 2.186 2.386 B 4.95 5.50 K 0.64 1.14 C 2.10 2.50 M 0.50 1.14 D 0.43 0.9 N 1.3 1.8 E 6.0 7.5 O 0 0.13 F 2.90 REF P 0.58REF. G 5.40 6.40 H 0.60 1.20 2 Drain 1 Gate ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 Continuous Drain Current 1 @VGS=10V Pulsed Drain Current 2 Total Power Dissipation 3 TC=25°C TC=100°C TC=25°C ID IDM PD -70 -50 -200 78 Operating Junction & Storage Temperature TJ, TSTG Thermal Resistance Rating -55~150 Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case 1 RθJA RθJC t≦10sec, 20 Steady State, 50 1.6 ...




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