SPR63N10S-C

Elektronische Bauelemente SPR63 10S-C 63A, 100V, RDS(O ) 9.8mΩ -Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SPR63N10S-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SPR63N10S-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Lower Gate Charge Advanced high cell density Trench technology Green Device Available MARKING PR-8PP 63N10S = Date code PACKAGE INFORMATION Package MPQ PR-8PP 3K Leader Size 13 inch ORDER INFORMATION Part Number Type SPR63N10S-C Lead (Pb)-free and Halogen-free REF. A B C D E F Millimeter Min. Max. 4.9 5.1 5.7 5.9 5.95 6.2 1.27 BSC. 0.35 0.49 0.1 0.2 REF. G H I J K L Millimeter Min. Max. 0.8 1.0 0.254 Ref. 4.0 Ref. 3.4 Ref. 0.6 Ref. 1.4 Ref. SD SD SD GD ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current 1 (Silicon Limited) Continuous Drain Current 1 (Package Limited) Pulsed Drain Current 2 4 TC=25°C TC=100°C TC=25°C ID IDM Power Dissipation TC=25°C PD Operating Junction & Storage Temperature Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case 1 TJ, TSTG Thermal Resistance Ratings RθJA RθJC Ratings 100 ±20 63 40 45 160 73.5 -55~150 50 1.7 ...