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Protection Diode. RSB39F2FH Datasheet

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Protection Diode. RSB39F2FH Datasheet






RSB39F2FH Diode. Datasheet pdf. Equivalent






RSB39F2FH Diode. Datasheet pdf. Equivalent


RSB39F2FH

Part

RSB39F2FH

Description

Bi direction ESD Protection Diode



Feature


Data Sheet Bi direction ESD Protection Diode RSB39F2FH AEC-Q101 Qualified Applications ESD Protection Feature s 1)Small mold type. (UMD3) 2)High reli ability. 3)Bi-directionality. Constr uctions Silicon epitaxial planer Di mensions (Unit : mm) 2.0±0.2 0.3±0.1 リードとも Each lead has same dim ension (3) 0.15±0.05 Land size fi gure (Unit : mm) 1.3 0.65 1.25±0.1 2.1±0.
Manufacture

ROHM

Datasheet
Download RSB39F2FH Datasheet


ROHM RSB39F2FH

RSB39F2FH; .1 0.1Min 0.9MIN. 1.6 (2) (0.65) 0.65) 1.3±0.1 (1) 0~0.1 0.7±0. 1 0.9±0.1 0.8MIN. UMD3 Structure ROHM : UMD3 JEDEC : SOT-323 JEITA : SC- 70 dot(year week factory) Taping di mensions (Unit : mm) 4.0±0.1 2.0±0. 05 φ1.55±0.05 0.3±0.1 1.75±0.1 8.0±0.2 3.5±0.05 2.4±0.1 2.4±0.1 5.5±0.2 0~0.1 2.25±0.1      0 4.0±0.1 φ0.5±0.05 1.25±0.1 Absolute maximum r.


ROHM RSB39F2FH

atings (Ta=25°C) Parameter Symbol Po wer dissipation (*) Pd Junction tempe rature Tj Storage temperature Tstg (*) Total two elements Limits 200 150 −55 to +150 Unit mW °C °C Elec trical characteristics (Ta=25°C) Para meter Symbol Min. Typ. Max. Unit Con ditions Zener voltage Reverse current Junction capacitance VZ 35.1 IR Ct - - 42.9 - 0.1 - 30 V IZ=1m.

Part

RSB39F2FH

Description

Bi direction ESD Protection Diode



Feature


Data Sheet Bi direction ESD Protection Diode RSB39F2FH AEC-Q101 Qualified Applications ESD Protection Feature s 1)Small mold type. (UMD3) 2)High reli ability. 3)Bi-directionality. Constr uctions Silicon epitaxial planer Di mensions (Unit : mm) 2.0±0.2 0.3±0.1 リードとも Each lead has same dim ension (3) 0.15±0.05 Land size fi gure (Unit : mm) 1.3 0.65 1.25±0.1 2.1±0.
Manufacture

ROHM

Datasheet
Download RSB39F2FH Datasheet




 RSB39F2FH
Data Sheet
Bi direction ESD Protection Diode
RSB39F2FH
AEC-Q101 Qualified
Applications
ESD Protection
Features
1)Small mold type. (UMD3)
2)High reliability.
3)Bi-directionality.
Constructions
Silicon epitaxial planer
Dimensions (Unit : mm)
2.0±0.2
0.3±0.1
各リードとも
Each lead has same dimension
(3)
0.15±0.05
Land size figure (Unit : mm)
1.3
0.65
(2)
(0.65) (0.65)
1.3±0.1
(1)
0~0.1
0.7±0.1
0.9±0.1
0.8MIN.
UMD3
Structure
ROHM : UMD3
JEDEC : SOT-323
JEITA : SC-70
dot(year week factory)
Taping dimensions (Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.05
0.3±0.1
2.25±0.1
     0
4.0±0.1
φ0.5±0.05
1.25±0.1
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Power dissipation (*)
Pd
Junction temperature
Tj
Storage temperature
Tstg
(*) Total two elements
Limits
200
150
55 to +150
Unit
mW
°C
°C
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Unit
Conditions
Zener voltage
Reverse current
Junction capacitance
VZ 35.1
IR -
Ct -
- 42.9
- 0.1
- 30
V IZ=1mA
μA VR=30V
pF VR=0V , f=1MHz
* Zener voltage (Vz) shall be measured at 40ms after loading current. Rating of per diode.
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.11 - Rev.A




 RSB39F2FH
RSB39F2FH
 
Data Sheet
10
apply voltage
1
Ta=150°C
Ta=75°C
0.1
Ta=25°C
Ta=125°C
Ta=25°C
0.01
25
30 35 40
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS(1)
45
10000
1000
apply voltage
100 Ta=150°C
10
1
0.1
0.01
0
Ta=125°C
Ta=75°C
Ta=25°C
5 10 15 20 25
REVERSE VOLTAGEVR(V)
VR-IR CHARACTERISTICS(1)
30
100
apply voltage
f=1MHz
10
apply voltage
1 Ta=150°C
Ta=75°C
0.1
Ta=25°C
Ta=125°C
Ta=25°C
0.01
25
30 35 40
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS(2)
45
10000
apply voltage
1000
Ta=150°C
100
Ta=125°C
10
1 Ta=75°C
0.1
0.01
0
Ta=25°C
5 10 15 20 25
REVERSE VOLTAGEVR(V)
VR-IR CHARACTERISTICS(2)
30
100
apply voltage
f=1MHz
10 10
1
0 5 10 15 20 25
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS(1)
1
01234
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS(2)
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.11 - Rev.A



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