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2SA1577FRA Dataheets PDF



Part Number 2SA1577FRA
Manufacturers ROHM
Logo ROHM
Description Medium Power Transistor
Datasheet 2SA1577FRA Datasheet2SA1577FRA Datasheet (PDF)

Medium Power Transistor (-32V, -05A) AEC-Q101 Qualified 2SA1577FRA Features 1) Large IC. ICMAX. = -500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SSCC44009977F.RA Structure Epitaxial planer type PNP silicon transistor Absolute maximum ratings (Ta=25C) Parameter Symbol Collector-base voltage VCBO Collector-emitter voltage VCEO Emitter-base voltage VEBO Collector current IC Collector power dissipation PC Junction temperature Tj Storage temperature .

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Medium Power Transistor (-32V, -05A) AEC-Q101 Qualified 2SA1577FRA Features 1) Large IC. ICMAX. = -500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SSCC44009977F.RA Structure Epitaxial planer type PNP silicon transistor Absolute maximum ratings (Ta=25C) Parameter Symbol Collector-base voltage VCBO Collector-emitter voltage VCEO Emitter-base voltage VEBO Collector current IC Collector power dissipation PC Junction temperature Tj Storage temperature ∗PC MAX. must not be exceeded. Tstg Limits −40 −32 −5 −0.5 0.2 150 −55 to +150 Unit V V V A∗ W °C °C Dimensions (Unit : mm) 22SSAA11557777FRA 2.0±0.2 1.3±0.1 0.65 0.65 (1) (2) 0.9±0.1 0.2 0.7±0.1 1.25±0.1 2.1±0.1 0.1 (3) 0.3 +−00.1 All terminals have same dimensions 0∼0.1 0.15±0.05 (1) Emitter ROHM : UMT3 EIAJ : SC-70 (2) Base (3) Collector ∗Abbreviated symbol: H ∗ Denotes hFE Electrical characteristics (Ta=25C) Parameter Symbol Collector-base breakdown voltage BVCBO Collector-emitter breakdown voltage BVCEO Emitter-base breakdown voltage BVEBO Collector outoff current ICBO Rmitter cutoff current IEBO Collector-emitter saturation voltage VCE(sat) DC current transfer ratio hFE Transition frequency fT Output capacitance Cob Min. −40 −32 −5 − − − 120 − − Typ. − − − − − − − 200 7 Max. − − − −1 −1 −0.6 390 − − Unit V V V μA μA V − MHz pF Conditions IC= −100μA IC= −1mA IE= −100μA VCB= −20V VEB= −4V IC/IB= −300mA/−30mA VCE= −3V, IC= −100mA VCE= −5V, IE=20mA, f=100MHz VCB= −10V, IE=0A, f=1MHz Packaging specifications Package Code Type hFE Basic ordering unit (pieces) 22SSA1A517577F7RA QR Taping T106 3000 hFE values are classifies as follows. Item Q R hFE 120 to 270 180 to 390 www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 1/2 2009.12 - Rev.B 2SA1577FRA Electrical characteristic curves COLLECTOR CURRENT : IC (mA) -500 -200 Ta=100°C 25 °C -100 −55°C -50 VCE=−3V -20 -10 -5 -2 -1 -0.5 -0.2 -0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation DC CURRENT GAIN : hFE 1000 500 200 100 50 Ta=25 C VCE=-5V -3V -1V 20 -1 -2 -5 -10 -20 -50 -100 -200 -500 -1000 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( Ι ) -1.0 lC/lB=10 -0.5 -0.3 -0.2 -0.1 Ta=100 C 25 C -0.05 -55 C -0.03 -0.02 -0.01 -1 -2 -5 -10 -20 -50 -100 -200 -500 -1000 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) TRANSITION FREQUENCY : fT (MHz) DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) Data Sheet -100 Ta=25 C -1mA -80 -0.9mA -0.8mA -0.7mA -0.6mA -60 -0.5mA -0.4mA -40 -0.3mA -20 -0.2mA -0.1mA 0 IB=0A 0 -1 -2 -3 -4 -5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteristics ( Ι ) 1000 500 200 100 50 Ta=100 C 25 C -55 C VCE=-3V 20 -1 -2 -5 -10 -20 -50 -100 -200 -500 -1000 COLLECTOR CURRENT : .


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