Document
Medium Power Transistor (-32V, -05A) AEC-Q101 Qualified
2SA1577FRA
Features 1) Large IC.
ICMAX. = -500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SSCC44009977F.RA
Structure Epitaxial planer type PNP silicon transistor
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature ∗PC MAX. must not be exceeded.
Tstg
Limits −40 −32 −5 −0.5 0.2 150 −55 to +150
Unit V V V A∗ W °C °C
Dimensions (Unit : mm) 22SSAA11557777FRA
2.0±0.2 1.3±0.1 0.65 0.65 (1) (2)
0.9±0.1 0.2 0.7±0.1
1.25±0.1 2.1±0.1 0.1
(3)
0.3 +−00.1
All terminals have same dimensions
0∼0.1 0.15±0.05
(1) Emitter
ROHM : UMT3 EIAJ : SC-70
(2) Base (3) Collector
∗Abbreviated symbol: H
∗ Denotes hFE
Electrical characteristics (Ta=25C)
Parameter
Symbol
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector outoff current
ICBO
Rmitter cutoff current
IEBO
Collector-emitter saturation voltage VCE(sat)
DC current transfer ratio
hFE
Transition frequency
fT
Output capacitance
Cob
Min. −40 −32 −5
− − − 120 − −
Typ. − − − − − − −
200 7
Max. − − − −1 −1
−0.6 390
− −
Unit V V V μA μA V −
MHz pF
Conditions IC= −100μA IC= −1mA IE= −100μA VCB= −20V VEB= −4V IC/IB= −300mA/−30mA VCE= −3V, IC= −100mA VCE= −5V, IE=20mA, f=100MHz VCB= −10V, IE=0A, f=1MHz
Packaging specifications
Package
Code
Type
hFE Basic ordering unit (pieces)
22SSA1A517577F7RA QR
Taping T106 3000
hFE values are classifies as follows.
Item
Q
R
hFE 120 to 270 180 to 390
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1/2
2009.12 - Rev.B
2SA1577FRA
Electrical characteristic curves
COLLECTOR CURRENT : IC (mA)
-500
-200 Ta=100°C 25 °C
-100 −55°C -50
VCE=−3V
-20 -10
-5
-2 -1 -0.5
-0.2 -0.1
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
DC CURRENT GAIN : hFE
1000 500
200 100
50
Ta=25 C
VCE=-5V -3V -1V
20 -1 -2 -5 -10 -20 -50 -100 -200 -500 -1000 COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector current ( Ι )
-1.0 lC/lB=10
-0.5 -0.3 -0.2
-0.1 Ta=100 C 25 C
-0.05 -55 C -0.03 -0.02
-0.01 -1 -2 -5 -10 -20 -50 -100 -200 -500 -1000 COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation voltage vs. collector current ( ΙΙ )
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
TRANSITION FREQUENCY : fT (MHz)
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : IC (mA)
Data Sheet
-100 Ta=25 C -1mA
-80
-0.9mA -0.8mA -0.7mA
-0.6mA -60
-0.5mA
-0.4mA -40
-0.3mA
-20 -0.2mA -0.1mA
0 IB=0A 0 -1 -2 -3 -4 -5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output characteristics ( Ι )
1000 500
200 100
50
Ta=100 C 25 C
-55 C
VCE=-3V
20 -1 -2 -5 -10 -20 -50 -100 -200 -500 -1000 COLLECTOR CURRENT : .