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Dual MOSFET. SDT517 Datasheet

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Dual MOSFET. SDT517 Datasheet






SDT517 MOSFET. Datasheet pdf. Equivalent




SDT517 MOSFET. Datasheet pdf. Equivalent





Part

SDT517

Description

Dual MOSFET



Feature


Elektronische Bauelemente SDT517 N & P- Ch Enhancement Mode MOSFET N-Ch: 6A, 12 V, RDS(ON) 24 mΩ P-Ch: -4.1A, -12V, R DS(ON) 45 mΩ RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free FEATURES Surface Mount P ackage Super High Density Cell Design f or Extremely Low RDS(ON) Exceptional On -resistance and Maximum DC Current Capa bility DFN2x2-6L-J APPLI.
Manufacture

SeCoS

Datasheet
Download SDT517 Datasheet


SeCoS SDT517

SDT517; CATIONS Power Management In Note Book Po rtable Equipment DC/DC Converter Load S witch MARKING 517 Date Code PACKAGE I NFORMATION Package MPQ DFN2×2-6L-J 3K Leader Size 7 inch REF. A B C D E F Millimeter Min. Typ. Max. 2.00 BS C. 2.00 BSC. 0.675 0.75 0.80 0.30 T yp. 0.75 0.86 1.1 0.65BSC REF. G H J K L P Millimeter Min. Typ. Max. 0.30 BSC 0.20 BSC 0 -- 0.


SeCoS SDT517

.06 0.15 0.20 0.25 0.20 0.30 0.38 0.52 0 .65 0.72 ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise specified) Para meter Symbol Drain-Source Voltage VD S Gate-Source Voltage Continuous Drain Current 1 VGS ID Pulsed Drain Curren t(tp=10us) IDM Continous Source-Drain Diode Current Lead Temperature for Sol dering Purposes (1/8’’ from case fo r 10 s) IS TL Operati.


SeCoS SDT517

ng Junction and Storage Temperature Rang e TJ, TSTG Thermal Resistance Rating Maximum Thermal Resistance from Juncti on to Ambient 1 RθJA N-ch 12 ±12 6 24 6 Rating P-ch -12 ±12 -4.1 -16.4 -4.1 260 150, -55~150 167 Unit V V A A A °C °C °C / W http://www.SeCoS GmbH.com/ 12-Sep-2017 Rev. B Any chang es of specification will not be informe d individually. Page 1 o.

Part

SDT517

Description

Dual MOSFET



Feature


Elektronische Bauelemente SDT517 N & P- Ch Enhancement Mode MOSFET N-Ch: 6A, 12 V, RDS(ON) 24 mΩ P-Ch: -4.1A, -12V, R DS(ON) 45 mΩ RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free FEATURES Surface Mount P ackage Super High Density Cell Design f or Extremely Low RDS(ON) Exceptional On -resistance and Maximum DC Current Capa bility DFN2x2-6L-J APPLI.
Manufacture

SeCoS

Datasheet
Download SDT517 Datasheet




 SDT517
Elektronische Bauelemente
SDT517
N & P-Ch Enhancement Mode MOSFET
N-Ch: 6A, 12V, RDS(ON) 24 m
P-Ch: -4.1A, -12V, RDS(ON) 45 m
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
FEATURES
Surface Mount Package
Super High Density Cell Design for
Extremely Low RDS(ON)
Exceptional On-resistance and
Maximum DC Current Capability
DFN2x2-6L-J
APPLICATIONS
Power Management In Note Book
Portable Equipment
DC/DC Converter
Load Switch
MARKING
517
Date Code
PACKAGE INFORMATION
Package
MPQ
DFN2×2-6L-J
3K
Leader Size
7 inch
REF.
A
B
C
D
E
F
Millimeter
Min. Typ. Max.
2.00 BSC.
2.00 BSC.
0.675 0.75
0.80
0.30 Typ.
0.75 0.86 1.1
0.65BSC
REF.
G
H
J
K
L
P
Millimeter
Min. Typ. Max.
0.30 BSC
0.20 BSC
0 -- 0.06
0.15 0.20 0.25
0.20 0.30 0.38
0.52 0.65 0.72
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current 1
VGS
ID
Pulsed Drain Current(tp=10us)
IDM
Continous Source-Drain Diode Current
Lead Temperature for Soldering Purposes
(1/8’’ from case for 10 s)
IS
TL
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Maximum Thermal Resistance from Junction to Ambient 1
RθJA
N-ch
12
±12
6
24
6
Rating
P-ch
-12
±12
-4.1
-16.4
-4.1
260
150, -55~150
167
Unit
V
V
A
A
A
°C
°C
°C / W
http://www.SeCoSGmbH.com/
12-Sep-2017 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 5




 SDT517
Elektronische Bauelemente
SDT517
N & P-Ch Enhancement Mode MOSFET
N-Ch: 6A, 12V, RDS(ON) 24 m
P-Ch: -4.1A, -12V, RDS(ON) 45 m
N-CH ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol
Min
Typ
Max
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
12
-
-
Zero Gate Voltage Drain Current
IDSS
-
-
1
Gate-Body Leakage Current
Gate-Threshold Voltage 2
IGSS
VGS(th)
-
0.5
- ±100
-1
- - 24
Drain-Source On-Resistance 2
RDS(ON)
-
-
- 27
- 42
Forward Transfer conductance 2
gFS
-
4
- 74
--
Diode forward voltage
VSD - - 1
Dynamic Characteristics
Input Capacitance
Ciss - 630 -
Output Capacitance
Coss - 164 -
Reverse Transfer Capacitance
Crss - 137 -
Switching Characteristics 3
Turn-On Delay Time
Td(ON)
-
5.5
-
Rise Time
Tr - 14 -
Turn-Off Delay Time
Td(OFF)
-
29
-
Fall Time
Tf - 10.2 -
Total Gate Charge
Qg - 12 -
Gate-Source Charge
Qgs - 1 -
Gate-Drain Charge
Qgd - 2 -
Unit Test Condition
V VGS=0, ID=250µA
µA VDS=16V, VGS=0
nA VDS=0,VGS= ±12V
V VDS=VGS, ID=250µA
VGS=10V, ID=6A
VGS=4.5V, ID=5A
m
VGS=2.5V, ID=4A
VGS=1.8V, ID=2A
S VDS=5V, ID=3.8A
V IS=1A, VGS=0V
VDS=10V
pF VGS=0
f=1MHz
VDS=10V
nS VGS=5V
RG=6
RL=1.7
VDS=10V
nC VGS=10V
ID=6A
http://www.SeCoSGmbH.com/
12-Sep-2017 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 5




 SDT517
Elektronische Bauelemente
SDT517
N & P-Ch Enhancement Mode MOSFET
N-Ch: 6A, 12V, RDS(ON) 24 m
P-Ch: -4.1A, -12V, RDS(ON) 45 m
P-CH ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol
Min
Typ
Max
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
-12
-
-
Zero Gate Voltage Drain Current
IDSS
-
- -1
Gate-Body Leakage Current
Gate-Threshold Voltage 2
IGSS
VGS(th)
-
-0.5
- ±100
- -0.9
Drain-Source On-Resistance 2
RDS(ON)
-
-
- 45
- 60
Forward Transfer conductance 2
gFS
-
6
- 90
--
Diode forward voltage
VSD -
- -1.2
Dynamic Characteristics
Input Capacitance
Ciss - 740 -
Output Capacitance
Coss - 290 -
Reverse Transfer Capacitance
Crss - 190 -
Switching Characteristics 3
Turn-On Delay Time
Td(ON)
-
20
-
Rise Time
Tr - 53 -
Turn-Off Delay Time
Td(OFF)
-
48
-
Fall Time
Tf - 20 -
Total Gate Charge
Qg - 9 -
Gate-Source Charge
Qgs - 1.2 -
Gate-Drain Charge
Qgd - 1.6
Notes:
1. Surface mounted on FR4 board using the minimum recommended pad size.
2. Pulse Test : Pulse width=300µs, duty cycle2%.
3. Switching characteristics are independent of operating junction temperature.
-
Unit Test Condition
V VGS=0, ID= -250µA
µA VDS= -8V, VGS=0
nA VDS=0,VGS= ±8V
V VDS=VGS, ID= -250µA
VGS= -4.5V, ID= -3.5A
mVGS= -2.5V, ID= -3A
VGS= -1.8V, ID= -2A
S VDS= -5V, ID= -4.1A
V IS= -3.3A, VGS=0V
VDS= -4V
pF VGS=0
f=1MHz
VDD= -4V
VGEN= -4.5V
nS ID= -3.3A
RG=1
RL=1.2
VDS= -4V
nC VGS= -2.5V
ID= -4.1A
http://www.SeCoSGmbH.com/
12-Sep-2017 Rev. B
Any changes of specification will not be informed individually.
Page 3 of 5



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