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N-Channel MOSFET. SSPF7490N Datasheet

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N-Channel MOSFET. SSPF7490N Datasheet






SSPF7490N MOSFET. Datasheet pdf. Equivalent






SSPF7490N MOSFET. Datasheet pdf. Equivalent


SSPF7490N

Part

SSPF7490N

Description

N-Channel MOSFET



Feature


Elektronische Bauelemente SSPF7490N 8.3 A, 150V, RDS(ON) 48 mΩ N-Ch Enhanceme nt Mode Power MOSFET RoHS Compliant Pr oduct A suffix of “-C” specifies ha logen & lead-free DESCRIPTION These mi niature surface mount MOSFETs utilize a high cell density trench process to pr ovide low RDS(on) and to ensure minimal power loss and heat dissipation. FEAT URES Low RDS(on) trench .
Manufacture

SeCoS

Datasheet
Download SSPF7490N Datasheet


SeCoS SSPF7490N

SSPF7490N; technology Low thermal impedance Fast sw itching speed APPLICATION Industrial D /C/DC conversion circuits White LED boo st converters Automotive systems PACKA GE INFORMATION Package MPQ DFN5x6-8P P 3K Leader Size 13 inch DFN5x6-8PP B D C θ eE A db g F G REF. A B C D E F G Millimeter Min. Max. 0.85 1 5.2 BSC 0.15 0.25 3.81 BSC 6.05 BSC 0.25 BS C 3.81 BSC REF. θ .


SeCoS SSPF7490N

b d e g Millimeter Min. Max. 0° 10° 0 .3 0.5 1.27 BSC 5.55 BSC 1.2 TYP. MAXI MUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-So urce Voltage Gate-Source Voltage VDS V GS Continuous Drain Current 1 TA=25° C TA=70°C Pulsed Drain Current 2 Con tinuous Source Current (Diode Conductio n) 1 ID IDM IS Power Dissipation 1 T A=25°C TA=70°C PD Ope.

Part

SSPF7490N

Description

N-Channel MOSFET



Feature


Elektronische Bauelemente SSPF7490N 8.3 A, 150V, RDS(ON) 48 mΩ N-Ch Enhanceme nt Mode Power MOSFET RoHS Compliant Pr oduct A suffix of “-C” specifies ha logen & lead-free DESCRIPTION These mi niature surface mount MOSFETs utilize a high cell density trench process to pr ovide low RDS(on) and to ensure minimal power loss and heat dissipation. FEAT URES Low RDS(on) trench .
Manufacture

SeCoS

Datasheet
Download SSPF7490N Datasheet




 SSPF7490N
Elektronische Bauelemente
SSPF7490N
8.3A, 150V, RDS(ON) 48 m
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide
low RDS(on) and to ensure minimal power loss and
heat dissipation.
FEATURES
Low RDS(on) trench technology
Low thermal impedance
Fast switching speed
APPLICATION
Industrial D/C/DC conversion circuits
White LED boost converters
Automotive systems
PACKAGE INFORMATION
Package
MPQ
DFN5x6-8PP
3K
Leader Size
13 inch
DFN5x6-8PP
B
D
C
θ
eE
A
db
g
F
G
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
0.85 1
5.2 BSC
0.15 0.25
3.81 BSC
6.05 BSC
0.25 BSC
3.81 BSC
REF.
θ
b
d
e
g
Millimeter
Min. Max.
0° 10°
0.3 0.5
1.27 BSC
5.55 BSC
1.2 TYP.
MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current 1
TA=25°C
TA=70°C
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
ID
IDM
IS
Power Dissipation 1
TA=25°C
TA=70°C
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Maximum Thermal Resistance from
Junction to Ambient 1
t10 sec
Steady State
RθJA
Notes:
1.
2.
The surface of the device is mounted on a 1” x 1” FR4 board.
The pulse width is limited by the maximum junction temperature.
Rating
150
±20
8.3
6.7
50
7.1
5
3.2
-55~150
25
65
Unit
V
V
A
A
A
A
W
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
11-May-2016 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4




 SSPF7490N
Elektronische Bauelemente
SSPF7490N
8.3A, 150V, RDS(ON) 48 m
N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Static 1
Gate-Source Threshold Voltage
Gate-Body Leakage Current
VGS(th)
IGSS
1
-
--
- ±100
Zero Gate Voltage Drain Current
IDSS
-
-
-1
- 25
On-State Drain Current
ID(on)
15
-
-
Drain-Source On-Resistance
RDS(ON)
-
-
- 48
- 54
Forward Transconductance gfs - 15 -
Diode Forward Voltage
VSD
-
0.74
-
Dynamic 1
Total Gate Charge
Gate-Source Charge
Qg - 58 -
Qgs - 17 -
Gate-Drain Charge
Input Capacitance
Qgd - 35 -
Ciss - 4388 -
Output Capacitance
Coss - 260 -
Reverse Transfer Capacitance
Crss
-
239
-
Turn-On Delay Time
Rise Time
Td(on)
-
20
-
Tr - 35 -
Turn-Off Delay Time
Td(off)
-
122
-
Fall Time
Tf - 38 -
Notes:
1. Pulse testPulse width300µs, duty cycle2%.
Unit Test Condition
V VDS=VGS, ID=250µA
nA VDS=0V, VGS= ±20V
VDS=120V, VGS=0
µA
VDS=120V, VGS=0, TJ=55°C
A VDS=5V, VGS=10V
VGS=10V, ID=8.3A
m
VGS=5.5V, ID=6.4A
S VDS=15V, ID=8.3A
V IS=3.6A, VGS=0
VDS=75V
nC VGS=5.5V
ID=8.3A
VDS=15V
pF VGS=0
f=1MHz
VDS=75V
VGEN=10V
nS ID=8.3A
RL=9.1
RGEN=6
http://www.SeCoSGmbH.com/
11-May-2016 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4



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