SSPF7490N

Elektronische Bauelemente SSPF7490N 8.3A, 150V, RDS(ON) 48 mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) trench technology Low thermal impedance Fast switching speed APPLICATION Industrial D/C/DC conversion circuits White LED boost converters Automotive systems PACKAGE INFORMATION Package MPQ DFN5x6-8PP 3K Leader Size 13 inch DFN5x6-8PP B D C θ eE A db g F G REF. A B C D E F G Millimeter Min. Max. 0.85 1 5.2 BSC 0.15 0.25 3.81 BSC 6.05 BSC 0.25 BSC 3.81 BSC REF. θ b d e g Millimeter Min. Max. 0° 10° 0.3 0.5 1.27 BSC 5.55 BSC 1.2 TYP. MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS Continuous Drain Current 1 TA=25°C TA=70°C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 ID IDM IS Power Dissipation 1 TA=25°C TA=70°C PD Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance Ratings Maximum Thermal Resistance from Junction to Ambient 1 t≦10 sec Steady State RθJA Notes: 1. 2. The surface of the device is mounted on a 1” x 1” FR4 board. The pulse width is limited by the maximum junction temperature. Rating 150 ±20 8.3 6.7 50 7.1 5 3.2 -55~150 25 65 Unit V V A A A A W W °C °C / W...