P-Channel MOSFET
Elektronische Bauelemente
SST2611B
-2.4A , -60V , RDS(ON) 175 mΩ P-Channel Enhancement Mode MOSFET
RoHS Compliant Prod...
Description
Elektronische Bauelemente
SST2611B
-2.4A , -60V , RDS(ON) 175 mΩ P-Channel Enhancement Mode MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
SST2611B utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is universally used for all commercial-industrial applications.
FEATURES
Simple Drive Requirement Smaller Outline Package Surface mount package
MARKING
2611B
Date Code
PACKAGE INFORMATION
Package
MPQ
SOT-26
3K
Leader Size 7 inch
SOT-26
D
H AC
EL
BJ
K FG
REF.
A B C D E F
Millimeter Min. Max. 2.70 3.10 2.60 3.00
1.20 REF. 1.40 1.80
0.95 REF.
0.60 REF.
REF.
G H J K L
Millimeter Min. Max.
0.37 REF. 0.30 0.55
-0.12 REF.
- 0.10
TOP VIEW
ABSOLUTE MAXIMUM RATINGS (TJ=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current @ VGS=10V 1
Pulsed Drain Current 2 Power Dissipation 3
TA=25°C TA=70°C
TA=25°C
ID
IDM PD
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
Thermal Resistance Rating
Maximum Junction to Ambient 1
RθJA
Ratings -60 ±20 -2.4 -1.7 -4.5 1.1 0.009
-55~150
110
Unit V V
A
A W W / °C °C
°C / W
http://www.SeCoSGmbH.com/
16-Mar-2015 Rev. A
Any changes of specification will not be informed individually.
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Elektronische Bauelemente
SST2611B
-2.4A , -60V , RDS(ON) 175 mΩ P-Channel Enhancemen...
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