N-Channel MOSFET
Elektronische Bauelemente
SMS3404
5.8A, 30V, RDS(ON) 30 mΩ N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Prod...
Description
Elektronische Bauelemente
SMS3404
5.8A, 30V, RDS(ON) 30 mΩ N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SMS3404 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for the use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.
FEATURES
Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic
MARKING
R4
SOT-23
A
L
3
Top View
CB
12
KE
1
3 2
D F GH J
REF.
A B C D E F
Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50
REF.
G H J K L
Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177
0.6 REF. 0.89 1.02
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size 7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (t≦10s) Pulsed Drain Current 1
ID IDM
Thermal Resistance from Junction to Ambient
RθJA
Operating Junction and Storage Temperature
TJ, TSTG
Notes: 1. Repetitive rating : Pulse width is limited by the maximum junction temperature.
Rating 30 ±20 5.8 30 357
150, -55~150
Unit V V A A
°C / W °C
http://www.SeCoSGmbH.com/
01-Dec-2015 Rev.A
Any changes of specification will not be informed individually.
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Elektronische Bauelemente
SMS3404
5.8A,...
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