P-Channel MOSFET. CTLM16PS05-R3 Datasheet

CTLM16PS05-R3 MOSFET. Datasheet pdf. Equivalent

Part CTLM16PS05-R3
Description P-Channel MOSFET
Feature CTLM16PS05-R3 P-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS - 50 V • .
Manufacture CT Micro
Datasheet
Download CTLM16PS05-R3 Datasheet



CTLM16PS05-R3
CTLM16PS05-R3
P-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS - 50 V
Drain-Source On-Resistance
RDS(ON) 2, at VGS= - 10V, IDS= - 100mA
RDS(ON) 2, at VGS= - 5.0V, IDS= - 100mA
Continuous Drain Current at TA=25 ID = - 160mA
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Applications
Power Management
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
Description
The CTLM16PS05-R3 uses high performance
Trench Technology to provide excellent RDS(ON) and
low gate charge which is suitable for most of the
synchronous buck converter applications .
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 1
Jun, 2015



CTLM16PS05-R3
CTLM16PS05-R3
P-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current @TA=25
IDM Pulsed Drain Current
PD Total Power Dissipation @TA=25
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJA
Thermal Resistance
Junction-Ambient (t=10s)
Test Conditions
Ratings
-50
±20
-0.16
-0.64
0.22
-55 to 150
-55 to 150
Units
V
V
A
A
W
oC
oC
Notes
1
1
2
Min Typ Max Units Notes
-
555
-
oC /W
1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 1
Jun, 2015





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)