DatasheetsPDF.com

CT3331-R3

CT Micro

P-Channel MOSFET

Description
CT3331-R3 P-Channel Enhancement MOSFET Features Drain-Source Breakdown Voltage VDSS - 200 V Drain-Source On-Resistance RDS(ON) 2.3Ω, at VGS= - 10V, IDS= - 0.2A RDS(ON) 2.4Ω, at VGS= - 4.5V, IDS= - 0.2A ℃, Continuous Drain Current at TA=25 ID = - 0.4A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free ESD Protection Applic...


CT Micro

CT3331-R3

File Download Download CT3331-R3 Datasheet

Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)