P-Channel MOSFET. CT3331-R3 Datasheet

CT3331-R3 MOSFET. Datasheet pdf. Equivalent

Part CT3331-R3
Description P-Channel MOSFET
Feature CT3331-R3 P-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS - 200 V • Dra.
Manufacture CT Micro
Datasheet
Download CT3331-R3 Datasheet



CT3331-R3
CT3331-R3
P-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS - 200 V
Drain-Source On-Resistance
RDS(ON) 2.3, at VGS= - 10V, IDS= - 0.2A
RDS(ON) 2.4, at VGS= - 4.5V, IDS= - 0.2A
℃,Continuous Drain Current at TA=25 ID = - 0.4A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
ESD Protection
Applications
Switches
Power supply circuits
Motor controls
Drivers
Description
The CT3331-R3 uses high performance Trench
Technology to provide excellent RDS(ON) and low gate
charge which is suitable for most of the synchronous
buck converter applications .
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 3
Oct, 2014



CT3331-R3
CT3331-R3
P-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current @TA=25
IDM Pulsed Drain Current
PD Total Power Dissipation @TA=25
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJA
Thermal Resistance
Junction-Ambient (t=10s)
Test Conditions
Ratings
-200
±20
-0.4
-1.6
1.1
-55 to 150
-55 to 150
Units
V
V
A
A
W
oC
oC
Notes
1
1
2
Min Typ Max Units Notes
-
121
-
oC /W
1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 3
Oct, 2014





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