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P-Channel MOSFET. CT3331-R3 Datasheet

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P-Channel MOSFET. CT3331-R3 Datasheet






CT3331-R3 MOSFET. Datasheet pdf. Equivalent






CT3331-R3 MOSFET. Datasheet pdf. Equivalent


CT3331-R3

Part

CT3331-R3

Description

P-Channel MOSFET



Feature


CT3331-R3 P-Channel Enhancement MOSFET Features • Drain-Source Breakdown Vol tage VDSS - 200 V • Drain-Source On-R esistance RDS(ON) 2.3Ω, at VGS= - 10V , IDS= - 0.2A RDS(ON) 2.4Ω, at VGS= - 4.5V, IDS= - 0.2A ℃,• Continuous D rain Current at TA=25 ID = - 0.4A • A dvanced high cell density Trench Techno logy • RoHS Compliance & Halogen Free • ESD Protection Applications • S.
Manufacture

CT Micro

Datasheet
Download CT3331-R3 Datasheet


CT Micro CT3331-R3

CT3331-R3; witches • Power supply circuits • Mo tor controls • Drivers Description T he CT3331-R3 uses high performance Tren ch Technology to provide excellent RDS( ON) and low gate charge which is suitab le for most of the synchronous buck con verter applications . Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & C onfidential Page 1 Rev.


CT Micro CT3331-R3

3 Oct, 2014 CT3331-R3 P-Channel Enhanc ement MOSFET Absolute Maximum Rating a t 25oC Symbol Parameters VDS Drain-S ource Voltage VGS Gate-Source Voltage ℃ID Continuous Drain Current @TA=25 IDM Pulsed Drain Current ℃PD Total Po wer Dissipation @TA=25 TSTG Storage T emperature Range TJ Operating Junction Temperature Range Thermal Characteris tics Symbol Paramete.

Part

CT3331-R3

Description

P-Channel MOSFET



Feature


CT3331-R3 P-Channel Enhancement MOSFET Features • Drain-Source Breakdown Vol tage VDSS - 200 V • Drain-Source On-R esistance RDS(ON) 2.3Ω, at VGS= - 10V , IDS= - 0.2A RDS(ON) 2.4Ω, at VGS= - 4.5V, IDS= - 0.2A ℃,• Continuous D rain Current at TA=25 ID = - 0.4A • A dvanced high cell density Trench Techno logy • RoHS Compliance & Halogen Free • ESD Protection Applications • S.
Manufacture

CT Micro

Datasheet
Download CT3331-R3 Datasheet




 CT3331-R3
CT3331-R3
P-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS - 200 V
Drain-Source On-Resistance
RDS(ON) 2.3, at VGS= - 10V, IDS= - 0.2A
RDS(ON) 2.4, at VGS= - 4.5V, IDS= - 0.2A
℃,Continuous Drain Current at TA=25 ID = - 0.4A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
ESD Protection
Applications
Switches
Power supply circuits
Motor controls
Drivers
Description
The CT3331-R3 uses high performance Trench
Technology to provide excellent RDS(ON) and low gate
charge which is suitable for most of the synchronous
buck converter applications .
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 3
Oct, 2014




 CT3331-R3
CT3331-R3
P-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current @TA=25
IDM Pulsed Drain Current
PD Total Power Dissipation @TA=25
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJA
Thermal Resistance
Junction-Ambient (t=10s)
Test Conditions
Ratings
-200
±20
-0.4
-1.6
1.1
-55 to 150
-55 to 150
Units
V
V
A
A
W
oC
oC
Notes
1
1
2
Min Typ Max Units Notes
-
121
-
oC /W
1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 3
Oct, 2014



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