HIRP2013X10-B40 SMD Type 850nm Infrared Emitter
Features
Small double-end package Viewing Angle= 700 High reliab...
HIRP2013X10-B40 SMD Type 850nm Infrared Emitter
Features
Small double-end package Viewing Angle= 700 High reliability Good spectral matching to Si photo detector RoHS compliance
Applications
Infrared sensor
Description
The HIRP2013X10-B40 is a GaAlAs infrared LED housed in a miniature SMD package. The device has a peak wavelength of 850nm LED spectrally matched with photo
transistor or photodiode.
Package Outline
Schematic
Anode
CT Micro Proprietary & Confidential
Cathode
Page 1
Rev 1 Dec, 2018
HIRP2013X10-B40 SMD Type 850nm Infrared Emitter
Absolute Maximum Rating at 250C
Symbol
Parameters
IF Continuous Forward Current
IFP Peak Forward Current
VR Reverse Voltage
Topr Operating Temperature
Tstg Storage Temperature
Tsol Soldering Temperature
PD Power Dissipation at(or below) 25℃ Free Air Temperature
Ratings 70 0.7 5
-40 ~ +85 -40 ~ +100
260 140
Units mA A V 0C 0C 0C mW
Notes 1
2
Electro-Optical Characteristics TA = 25°C (unless otherwise specified)
Optical Characteristics
Symbol
Parameters
Test Conditions
Min
Ie Radiant Intensity
λp Δλ θ1/2
Peak Wavelength Spectral Bandwidth Angle of Half Intensity
IF=20mA IF=70mA IF=20mA IF=20mA IF=20mA
1.60 -
Typ 2.20 8.0 850 30 70
Max 3.20
-
Units Notes mW/sr 3
nm nm deg
Electrical Characteristics
Symbol
Parameters
VF Forward Voltage
IR Reverse Current
Test Conditions IF=20mA IF=70mA
IF=0.5A,Tp=3ms IF=1A,Tp=3ms
VR=5V
Notes: 1. IFP Conditions--Pulse Width≦ 100μs and Duty≦ 1%.
2. Soldering...