Infrared Emitter. HIRP2013X10-B40 Datasheet

HIRP2013X10-B40 Emitter. Datasheet pdf. Equivalent

Part HIRP2013X10-B40
Description Infrared Emitter
Feature HIRP2013X10-B40 SMD Type 850nm Infrared Emitter Features  Small double-end package  Viewing Angle.
Manufacture CT Micro
Total Page 9 Pages
Datasheet
Download HIRP2013X10-B40 Datasheet



HIRP2013X10-B40
HIRP2013X10-B40
SMD Type 850nm Infrared Emitter
Features
Small double-end package
Viewing Angle= 700
High reliability
Good spectral matching to Si photo detector
RoHS compliance
Applications
Infrared sensor
Description
The HIRP2013X10-B40 is a GaAlAs infrared LED
housed in a miniature SMD package. The device
has a peak wavelength of 850nm LED spectrally
matched with phototransistor or photodiode.
Package Outline
Schematic
Anode
CT Micro
Proprietary & Confidential
Cathode
Page 1
Rev 1
Dec, 2018



HIRP2013X10-B40
HIRP2013X10-B40
SMD Type 850nm Infrared Emitter
Absolute Maximum Rating at 250C
Symbol
Parameters
IF Continuous Forward Current
IFP Peak Forward Current
VR Reverse Voltage
Topr Operating Temperature
Tstg Storage Temperature
Tsol Soldering Temperature
PD Power Dissipation at(or below) 25Free Air Temperature
Ratings
70
0.7
5
-40 ~ +85
-40 ~ +100
260
140
Units
mA
A
V
0C
0C
0C
mW
Notes
1
2
Electro-Optical Characteristics TA = 25°C (unless otherwise specified)
Optical Characteristics
Symbol
Parameters
Test Conditions
Min
Ie Radiant Intensity
λp
Δλ
θ1/2
Peak Wavelength
Spectral Bandwidth
Angle of Half Intensity
IF=20mA
IF=70mA
IF=20mA
IF=20mA
IF=20mA
1.60
-
-
-
-
Typ
2.20
8.0
850
30
70
Max
3.20
-
-
-
-
Units Notes
mW/sr 3
nm
nm
deg
Electrical Characteristics
Symbol
Parameters
VF Forward Voltage
IR Reverse Current
Test Conditions
IF=20mA
IF=70mA
IF=0.5A,Tp=3ms
IF=1A,Tp=3ms
VR=5V
Notes:
1. IFP Conditions--Pulse Width100μs and Duty1%.
2. Soldering time5 seconds.
3. Ie Bin Rank : (Tolerance of Radiant Intensity:±10%)
Bin Code
AB
CD
Min 1.60 2.40
Max 2.40 3.20
CT Micro
Proprietary & Confidential
Page 2
Min Typ Max Units Notes
1.2 1.4 1.7
1.3 1.5 2.0
1.5 2.0 2.4
V
1.8 2.4 3.2
- - 10 µA
Rev 1
Dec, 2018





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