CT3401A-R3

CT3401A-R3 P-Channel Enhancement MOSFET Features Drain-Source Breakdown Voltage VDSS - 30 V Drain-Source On-Resistance RDS(ON) 33mΩ, at VGS= - 10V, IDS= - 4.2A RDS(ON) 38mΩ, at VGS= - 4.5V, IDS= - 4.0A RDS(ON) 51mΩ, at VGS= - 2.5V, IDS= - 1.0A ℃ Continuous Drain Current at TA=25 ID = - 4.2A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free Applications Power Management LCD Display inverter Load Switch Description The CT3401A-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for low voltage application. Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 2 Aug, 2015 CT3401A-R3 P-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current IDM Pulsed Drain Current PD Total Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJA Thermal Resistance Junction-Ambient (t=10s) Test Conditions Ratings -30 ±12 -4.2 -30 1.4 -55 to 150 -55 to 150 Units V V A A W oC oC Notes 1 1 2 Min Typ Max Units Notes - 140 - oC /W 1,4 CT Micro Proprietary & Confidential Page 2 Rev 2 Aug, 2015 CT3401A-R3 P-Channel Enhancement MOSFET Electrical Characteristics TA = 25°C (unless otherwise specified) Static Characteristics Symbol Par...