P-Channel MOSFET. CT3401A-R3 Datasheet

CT3401A-R3 MOSFET. Datasheet pdf. Equivalent

Part CT3401A-R3
Description P-Channel MOSFET
Feature CT3401A-R3 P-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS - 30 V • Dra.
Manufacture CT Micro
Datasheet
Download CT3401A-R3 Datasheet



CT3401A-R3
CT3401A-R3
P-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS - 30 V
Drain-Source On-Resistance
RDS(ON) 33m, at VGS= - 10V, IDS= - 4.2A
RDS(ON) 38m, at VGS= - 4.5V, IDS= - 4.0A
RDS(ON) 51m, at VGS= - 2.5V, IDS= - 1.0A
Continuous Drain Current at TA=25 ID = - 4.2A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Applications
Power Management
LCD Display inverter
Load Switch
Description
The CT3401A-R3 uses high performance Trench
Technology to provide excellent RDS(ON) and low gate
charge which is suitable for low voltage
application.
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 2
Aug, 2015



CT3401A-R3
CT3401A-R3
P-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current
IDM Pulsed Drain Current
PD Total Power Dissipation
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJA
Thermal Resistance
Junction-Ambient (t=10s)
Test Conditions
Ratings
-30
±12
-4.2
-30
1.4
-55 to 150
-55 to 150
Units
V
V
A
A
W
oC
oC
Notes
1
1
2
Min Typ Max Units Notes
-
140
-
oC /W
1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 2
Aug, 2015





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