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CT1119L-W Dataheets PDF



Part Number CT1119L-W
Manufacturers CT Micro
Logo CT Micro
Description Phototransistor Optocoupler
Datasheet CT1119L-W DatasheetCT1119L-W Datasheet (PDF)

CT1110-W, CT1111-W, CT1112-W, CT1113-W, CT1114-W CT1115-W, CT1116-W, CT1117-W, CT1118-W, CT1119-W CT1110L-W, CT1111L-W, CT1112L-W, CT1113L-W, CT1114L-W CT1115L-W, CT1116L-W, CT1117L-W, CT1118L-W, CT1119L-W DC Input 5-Pin Long Mini-Flat Phototransistor Optocoupler Features • High isolation 5000 VRMS • CTR flexibility available see order information • Extra low coupling capacitance • DC input with transistor output • OperatingTemperature range - 55 °C to 125 °C • Green Package Applications • Swi.

  CT1119L-W   CT1119L-W



Document
CT1110-W, CT1111-W, CT1112-W, CT1113-W, CT1114-W CT1115-W, CT1116-W, CT1117-W, CT1118-W, CT1119-W CT1110L-W, CT1111L-W, CT1112L-W, CT1113L-W, CT1114L-W CT1115L-W, CT1116L-W, CT1117L-W, CT1118L-W, CT1119L-W DC Input 5-Pin Long Mini-Flat Phototransistor Optocoupler Features • High isolation 5000 VRMS • CTR flexibility available see order information • Extra low coupling capacitance • DC input with transistor output • OperatingTemperature range - 55 °C to 125 °C • Green Package Applications • Switch mode power supplies • Computer peripheral interface • Microprocessor system interface Description The CT11XX-W, CT11XXL-W series consists of a photo transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 5-lead SOP Package. Package Outline Schematic CT Micro Proprietary & Confidential Page 1 Rev 2 Dec, 2017 CT1110-W, CT1111-W, CT1112-W, CT1113-W, CT1114-W CT1115-W, CT1116-W, CT1117-W, CT1118-W, CT1119-W CT1110L-W, CT1111L-W, CT1112L-W, CT1113L-W, CT1114L-W CT1115L-W, CT1116L-W, CT1117L-W, CT1118L-W, CT1119L-W DC Input 5-Pin Long Mini-Flat Phototransistor Optocoupler Absolute Maximum Rating at 25oC Symbol Parameters VISO Isolation voltage *1 TOPR Operating temperature TSTG Storage temperature TSOL Soldering temperature *2 Emitter IF Forward current IF(TRANS) Peak transient current (≤1μs P.W,300pps) VR Reverse voltage PD Power dissipation Detector PD Power dissipation BVCEO Collector-Emitter Breakdown Voltage BVECO Emitter-Collector Breakdown Voltage BVCBO Collector-Base Breakdown Voltage BVEBO Emitter-Base Breakdown Voltage IC Collector Current Thermal Characteristics Symbol Parameters RӨJA Thermal Resistance Junction-Ambient TJ Junction temperature Note: 1. Soldering Time: 10 seconds (max) Ratings 5000 -55 ~ +125 -55 ~ +150 260 50 1 6 85 150 80 7 80 7 50 Units VRMS oC oC oC Notes mA A V mW mW V V V V mA Ratings 445 125 Units ℃/W ℃ Notes CT Micro Proprietary & Confidential Page 2 Rev 2 Dec, 2017 CT1110-W, CT1111-W, CT1112-W, CT1113-W, CT1114-W CT1115-W, CT1116-W, CT1117-W, CT1118-W, CT1119-W CT1110L-W, CT1111L-W, CT1112L-W, CT1113L-W, CT1114L-W CT1115L-W, CT1116L-W, CT1117L-W, CT1118L-W, CT1119L-W DC Input 5-Pin Long Mini-Flat Phototransistor Optocoupler Electrical Characteristics TA = 25°C (unless otherwise specified) Emitter Characteristics Symbol Parameters VF Forward voltage IR Reverse Current CIN Input Capacitance Test Conditions IF=10mA IF = 50mA VR = 6V f= 1kHz Detector Characteristics Symbol Parameters BVCEO Collector-Emitter Breakdown BVECO Emitter-Collector Breakdown BVCBO Collector-Base Breakdown BVEBO Emitter-Base Breakdown ICEO Collector-Emitter Dark Current ICBO Collector-Base Dark Current Test Conditions IC= 100µA IE= 100µA IC= 100µA IE= 100µA VCE= 20V VCB= 20V Min Typ Max Units Notes 1.24 1.4 V - 1.45 1.5 V - - 5 µA - 45 - pF Min Typ Max Units Notes 80 - -V 7- -V 80 - -V 7- -V - - 100 nA 20 nA CT Micro Proprietary & Confidential Page 3 Rev 2 Dec, 20.


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